{
  "schema": "semiagora.deep-simulation.v1",
  "execution_mode": "precomputed-only",
  "experiment_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
  "slug": "dram-1t1c-charge-sharing-sense",
  "title": "DRAM 1T1C charge sharing and sense margin",
  "model_boundary": "normalized 1T1C charge-sharing model, not a calibrated DRAM macro",
  "public_boundary": [
    "No live server solver execution.",
    "No PDK or proprietary compact-model ingestion, measured-silicon claim, qualification signoff, upload, account, payment, comment, newsletter signup, or submission workflow.",
    "Third-party tools and source pages remain source links unless separately reviewed."
  ],
  "headline_metric": {
    "name": "largest_sense_margin_mv",
    "value": 126.565,
    "case": {
      "cell_cap_ff": 35,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.95
    }
  },
  "rows": [
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 59.211,
      "sense_margin_mv": 41.211,
      "sense_time_proxy_ns": 0.6592,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 75,
      "sense_margin_mv": 57,
      "sense_time_proxy_ns": 0.6289,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 41.667,
      "sense_margin_mv": 23.667,
      "sense_time_proxy_ns": 0.7401,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 52.778,
      "sense_margin_mv": 34.778,
      "sense_time_proxy_ns": 0.6794,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 28.846,
      "sense_margin_mv": 10.846,
      "sense_time_proxy_ns": 0.9649,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 15,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 36.538,
      "sense_margin_mv": 18.538,
      "sense_time_proxy_ns": 0.7927,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 89.286,
      "sense_margin_mv": 71.286,
      "sense_time_proxy_ns": 0.6131,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 113.095,
      "sense_margin_mv": 95.095,
      "sense_time_proxy_ns": 0.5973,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 64.655,
      "sense_margin_mv": 46.655,
      "sense_time_proxy_ns": 0.6465,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 81.897,
      "sense_margin_mv": 63.897,
      "sense_time_proxy_ns": 0.6204,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 45.732,
      "sense_margin_mv": 27.732,
      "sense_time_proxy_ns": 0.7123,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 25,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 57.927,
      "sense_margin_mv": 39.927,
      "sense_time_proxy_ns": 0.6627,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 114.13,
      "sense_margin_mv": 96.13,
      "sense_time_proxy_ns": 0.5968,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 80,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 144.565,
      "sense_margin_mv": 126.565,
      "sense_time_proxy_ns": 0.5856,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 84.677,
      "sense_margin_mv": 66.677,
      "sense_time_proxy_ns": 0.6175,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 120,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 107.258,
      "sense_margin_mv": 89.258,
      "sense_time_proxy_ns": 0.6004,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.75,
      "bitline_delta_mv": 61.047,
      "sense_margin_mv": 43.047,
      "sense_time_proxy_ns": 0.6545,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    },
    {
      "simulation_id": "SA-MEM-003-DRAM-1T1C-SENSE-001",
      "domain": "memory",
      "cell_cap_ff": 35,
      "bitline_cap_ff": 180,
      "cell_voltage_v": 0.95,
      "bitline_delta_mv": 77.326,
      "sense_margin_mv": 59.326,
      "sense_time_proxy_ns": 0.6259,
      "teaching_point": "A tiny 1T1C charge-sharing delta must become a reliable full-swing decision."
    }
  ],
  "methods": [
    "Bitline delta is computed from a simple capacitive charge-sharing relation.",
    "Sense margin subtracts a fixed comparator/noise floor proxy from the bitline delta.",
    "Sense-time proxy falls as the available differential grows."
  ],
  "limitations": [
    "No access transistor, parasitic network, bitline precharge circuit, sense-amplifier transistor model, or vendor DRAM timing is included.",
    "No measured DRAM cell, JEDEC, retention, or product claim is made.",
    "Use measured arrays or calibrated circuit models before citing DRAM sense margins."
  ],
  "evidence": [
    "v64 deep results store every capacitance, voltage, margin, and timing row.",
    "CSV export preserves the charge-sharing table.",
    "The memory lesson now separates 1T1C cell evidence from system-level DRAM/HBM behavior."
  ],
  "sources": [
    {
      "label": "Ramulator2",
      "url": "https://github.com/CMU-SAFARI/ramulator2",
      "note": "External MIT-licensed DRAM/HBM simulator reference; v64 pages use original teaching data."
    },
    {
      "label": "DRAMsim3",
      "url": "https://github.com/umd-memsys/DRAMsim3",
      "note": "External MIT-licensed DRAM timing and thermal simulator reference."
    },
    {
      "label": "IEEE IRDS",
      "url": "https://irds.ieee.org/",
      "note": "Roadmap source spine for memory hierarchy and emerging memory vocabulary."
    },
    {
      "label": "Google Security RowHammer research note",
      "url": "https://blog.google/security/supporting-rowhammer-research-to/",
      "note": "Public context for RowHammer as a DRAM charge-leakage, refresh, and security-evidence topic."
    }
  ],
  "source_seed_run": "07_assets/factory_lab/experiments/DEEP_SEMICONDUCTOR_V64_2026-08-14/"
}