{ "schema": "semiagora.epitaxy-chain-public-manifest.v1", "version": "2026-08-29-packet-v1", "packetVersion": "2026-08-29-epitaxy-chain-v1", "experimentId": "SA-PROC-DEP-EPI-021", "generatedAt": "2026-08-29T00:00:00+09:00", "status": "packet-only-not-deployed", "counts": { "rows": 6912, "physicalRows": 3456, "evidencePairs": 3456, "evidencePairComparisons": 656640, "columns": 192, "sources": 20, "claimNodes": 16, "normalizedProxyEquations": 20, "exactIntegerLedgerEquations": 16, "exactIntegerLedgers": 3, "prohibitedZeroFields": 112 }, "axes": [ { "id": "material_system_family", "count": 6, "values": [ "silicon_homoepitaxy_like", "silicon_germanium_heteroepitaxy_like", "iii_v_movpe_like", "silicon_carbide_homoepitaxy_like", "gallium_nitride_heteroepitaxy_like", "molecular_beam_epitaxy_vocabulary_like" ], "meaning": "Six separate evidence-family labels; no chemistry, lattice constant, precursor, substrate, orientation, temperature, rate, thickness, composition, or transferable physical parameter." }, { "id": "growth_platform_mode", "count": 2, "values": [ "vapor_phase_reactor_like", "molecular_beam_environment_like" ], "meaning": "Categorical growth-environment vocabulary only; not a tool design, pressure, flux, flow, source, geometry, or equipment command." }, { "id": "interface_readiness_state", "count": 3, "values": [ "interface_unprepared_like", "interface_conditioned_like", "interface_overdriven_like" ], "meaning": "Original interface-readiness posture; not a cleaning sequence, surface termination, reconstruction, contamination value, nucleation layer, or recipe." }, { "id": "strain_relaxation_state", "count": 3, "values": [ "coherently_strained_like", "transition_relaxation_like", "defect_relaxed_like" ], "meaning": "Original categorical strain-relaxation posture; not lattice mismatch, critical thickness, strain, stress, dislocation density, composition, or measurement." }, { "id": "delivery_loading_state", "count": 2, "values": [ "loading_sensitive_like", "loading_balanced_like" ], "meaning": "Original categorical loading posture; not flow, flux, depletion fraction, residence time, reactor loading, wafer count, or transport calculation." }, { "id": "wafer_position_state", "count": 2, "values": [ "wafer_edge_like", "wafer_center_like" ], "meaning": "Categorical spatial comparison only; not wafer coordinate, orientation, size, carrier geometry, sampling site, or measured spatial result." }, { "id": "ordered_state", "count": 8, "values": [ "E00", "E01", "E02", "E03", "E04", "E05", "E06", "E07" ], "meaning": "Eight ordered review states for deterministic branch coverage; explicitly not time, temperature, thickness, growth progress, strain relaxation, defect evolution, or equipment state." }, { "id": "evidence_posture", "count": 2, "values": [ "teaching_assumption", "replacement_slot" ], "meaning": "Metadata only. It is outside the physical key and cannot change any coefficient, proxy, token, regime, gate, bridge, or label." } ], "ranges": { "ordered_state_norm": { "min": 0, "max": 1 }, "substrate_surface_readiness_proxy": { "min": 0.4696, "max": 0.710228571 }, "nucleation_coherence_proxy": { "min": 0.3992, "max": 0.8672 }, "arrival_balance_proxy": { "min": 0.4692, "max": 0.7932 }, "loading_control_proxy": { "min": 0.430208, "max": 0.708368 }, "interface_margin_proxy": { "min": 0.4256, "max": 0.780685714 }, "nucleation_settle_readiness_proxy": { "min": 0.38152, "max": 0.81768 }, "ordered_growth_readiness_proxy": { "min": 0.45152, "max": 0.796632 }, "within_wafer_uniformity_proxy": { "min": 0.53862144, "max": 0.81718624 }, "wafer_to_wafer_uniformity_proxy": { "min": 0.4602544, "max": 0.7671584 }, "wafer_edge_nonuniformity_burden_proxy": { "min": 0.28492, "max": 0.7784 }, "thickness_handoff_readiness_proxy": { "min": 0.595955309, "max": 0.803791985 }, "composition_handoff_readiness_proxy": { "min": 0.571584, "max": 0.8214464 }, "strain_retention_control_proxy": { "min": 0.489684352, "max": 0.793388672 }, "interface_continuity_readiness_proxy": { "min": 0.580330296, "max": 0.858703468 }, "process_drift_burden_proxy": { "min": 0.320565028, "max": 0.686176 }, "model_limit_burden_proxy": { "min": 0.35216, "max": 0.82656 }, "metrology_readiness_proxy": { "min": 0.588466646, "max": 0.826453092 }, "evidence_flow_readiness_proxy": { "min": 0.478304872, "max": 0.711438562 }, "epitaxy_handoff_readiness_proxy": { "min": 0.591125038, "max": 0.803530528 } }, "distributions": { "furnaceRegime": { "substrate-interface-limited": 1836, "arrival-balance-limited": 1260, "nucleation-coherence-limited": 1296, "loading-uniformity-limited": 600, "bounded-epitaxy-review": 1000, "strain-retention-limited": 456, "metrology-readiness-limited": 448, "defect-relaxation-limited": 16 }, "labels": { "growth_operator_gate": { "review-substrate-interface": 1836, "review-arrival-balance": 1260, "review-nucleation-coherence": 1296, "review-loading-uniformity": 600, "review-process-drift": 184, "review-strain-retention": 456, "proceed-to-evidence-review": 816, "review-metrology-readiness": 448, "review-defect-relaxation": 16 }, "epitaxy_engineer_gate": { "review-interface-history": 1836, "review-arrival-balance": 1260, "review-nucleation-coherence": 1296, "review-loading-uniformity": 600, "review-throughput": 602, "review-strain-retention": 456, "bounded-comparison-ready": 398, "review-metrology-readiness": 448, "review-defect-relaxation": 16 }, "integration_gate": { "epitaxy-handoff-blocked": 6912 }, "yield_gate": { "review-wafer-to-wafer-uniformity": 990, "review-defect-relaxation": 1362, "bounded-teaching-review": 4542, "review-metrology": 12, "review-thickness": 6 }, "measurement_traceability_gate": { "measurement-plan-required": 1000, "owned-measurement-replacement-required": 5912 }, "upstream_vac_gas_delivery_band": { "transitional-like": 3744, "limited-like": 1728, "bounded-like": 1440 }, "upstream_vac_gas_stability_band": { "limited-like": 2376, "transitional-like": 4008, "bounded-like": 528 }, "upstream_vac_gas_evidence_gate": { "replacement-evidence-required": 6912 }, "upstream_cvd_pecvd_reaction_band": { "transitional-like": 1728, "limited-like": 2160, "bounded-like": 3024 }, "upstream_cvd_pecvd_uniformity_band": { "transitional-like": 3528, "limited-like": 864, "bounded-like": 2520 }, "upstream_cvd_pecvd_evidence_gate": { "replacement-evidence-required": 6912 }, "upstream_lpcvd_interface_band": { "transitional-like": 1278, "limited-like": 324, "bounded-like": 5310 }, "upstream_lpcvd_thermal_history_band": { "intermediate-like": 3534, "higher-like": 768, "lower-like": 2610 }, "upstream_lpcvd_evidence_gate": { "replacement-evidence-required": 6912 }, "upstream_wet_surface_band": { "transitional-like": 1956, "limited-like": 324, "bounded-like": 4632 }, "upstream_wet_residue_band": { "transitional-like": 3324, "limited-like": 2352, "bounded-like": 1236 }, "upstream_wet_evidence_gate": { "replacement-evidence-required": 6912 }, "downstream_structural_uniformity_band": { "transitional-like": 2592, "nonuniform-like": 864, "bounded-like": 3456 }, "downstream_interface_history_band": { "limited-like": 3456, "transitional-like": 648, "bounded-like": 2808 }, "downstream_defect_property_priority_band": { "review-like": 3616, "high-priority": 768, "lower-priority": 2528 }, "downstream_metrology_priority_band": { "substrate-interface": 3456, "arrival-loading": 1296, "nucleation": 768, "completion-state": 532, "drift-series": 62, "wafer-to-wafer": 408, "within-wafer": 24, "defect-property": 118, "model-limit": 170, "thickness": 78 }, "downstream_inspection_evidence_gate": { "replacement-evidence-required": 6912 }, "teaching_epitaxy_handoff_gate": { "blocked-pending-owned-evidence": 6912 } } }, "representativeStates": [ { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_unprepared_like|coherently_strained_like|loading_sensitive_like|wafer_edge_like|E00", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_unprepared_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_edge_like", "ordered_state": "E00", "epitaxy_regime": "substrate-interface-limited", "ordered_state_norm": 0, "substrate_surface_readiness_proxy": 0.5656, "nucleation_coherence_proxy": 0.5536, "arrival_balance_proxy": 0.6136, "loading_control_proxy": 0.519264, "interface_margin_proxy": 0.4356, "nucleation_settle_readiness_proxy": 0.38352, "ordered_growth_readiness_proxy": 0.47264, "within_wafer_uniformity_proxy": 0.65283552, "wafer_to_wafer_uniformity_proxy": 0.5652112, "wafer_edge_nonuniformity_burden_proxy": 0.49702, "thickness_handoff_readiness_proxy": 0.63068023, "composition_handoff_readiness_proxy": 0.6374544, "strain_retention_control_proxy": 0.588160896, "interface_continuity_readiness_proxy": 0.651260623, "process_drift_burden_proxy": 0.6147828, "model_limit_burden_proxy": 0.54928, "metrology_readiness_proxy": 0.60823284, "evidence_flow_readiness_proxy": 0.613844232, "epitaxy_handoff_readiness_proxy": 0.645953917, "growth_operator_gate": "review-substrate-interface", "epitaxy_engineer_gate": "review-interface-history", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "review-wafer-to-wafer-uniformity", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_unprepared_like|transition_relaxation_like|loading_sensitive_like|wafer_edge_like|E04", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_unprepared_like", "strain_relaxation_state": "transition_relaxation_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_edge_like", "ordered_state": "E04", "epitaxy_regime": "nucleation-coherence-limited", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.521028571, "nucleation_coherence_proxy": 0.4736, "arrival_balance_proxy": 0.500914286, "loading_control_proxy": 0.437819429, "interface_margin_proxy": 0.477885714, "nucleation_settle_readiness_proxy": 0.460548571, "ordered_growth_readiness_proxy": 0.549965714, "within_wafer_uniformity_proxy": 0.582522926, "wafer_to_wafer_uniformity_proxy": 0.496137829, "wafer_edge_nonuniformity_burden_proxy": 0.70118, "thickness_handoff_readiness_proxy": 0.613282939, "composition_handoff_readiness_proxy": 0.597990171, "strain_retention_control_proxy": 0.566497883, "interface_continuity_readiness_proxy": 0.620701695, "process_drift_burden_proxy": 0.563936628, "model_limit_burden_proxy": 0.656708571, "metrology_readiness_proxy": 0.631817877, "evidence_flow_readiness_proxy": 0.579346202, "epitaxy_handoff_readiness_proxy": 0.620705389, "growth_operator_gate": "review-nucleation-coherence", "epitaxy_engineer_gate": "review-nucleation-coherence", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "review-defect-relaxation", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_unprepared_like|coherently_strained_like|loading_sensitive_like|wafer_edge_like|E04", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_unprepared_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_edge_like", "ordered_state": "E04", "epitaxy_regime": "arrival-balance-limited", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.617028571, "nucleation_coherence_proxy": 0.4736, "arrival_balance_proxy": 0.5976, "loading_control_proxy": 0.515424, "interface_margin_proxy": 0.477885714, "nucleation_settle_readiness_proxy": 0.460548571, "ordered_growth_readiness_proxy": 0.571085714, "within_wafer_uniformity_proxy": 0.621630034, "wafer_to_wafer_uniformity_proxy": 0.5386192, "wafer_edge_nonuniformity_burden_proxy": 0.59998, "thickness_handoff_readiness_proxy": 0.635024349, "composition_handoff_readiness_proxy": 0.621446171, "strain_retention_control_proxy": 0.569896393, "interface_continuity_readiness_proxy": 0.625936657, "process_drift_burden_proxy": 0.517768628, "model_limit_burden_proxy": 0.656708571, "metrology_readiness_proxy": 0.652477148, "evidence_flow_readiness_proxy": 0.622212282, "epitaxy_handoff_readiness_proxy": 0.635670722, "growth_operator_gate": "review-arrival-balance", "epitaxy_engineer_gate": "review-arrival-balance", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "review-defect-relaxation", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_conditioned_like|coherently_strained_like|loading_sensitive_like|wafer_edge_like|E04", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_conditioned_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_edge_like", "ordered_state": "E04", "epitaxy_regime": "loading-uniformity-limited", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.617028571, "nucleation_coherence_proxy": 0.7872, "arrival_balance_proxy": 0.5976, "loading_control_proxy": 0.515424, "interface_margin_proxy": 0.477885714, "nucleation_settle_readiness_proxy": 0.460548571, "ordered_growth_readiness_proxy": 0.698621714, "within_wafer_uniformity_proxy": 0.621630034, "wafer_to_wafer_uniformity_proxy": 0.5386192, "wafer_edge_nonuniformity_burden_proxy": 0.59998, "thickness_handoff_readiness_proxy": 0.705815709, "composition_handoff_readiness_proxy": 0.730166171, "strain_retention_control_proxy": 0.569896393, "interface_continuity_readiness_proxy": 0.780544657, "process_drift_burden_proxy": 0.469768628, "model_limit_burden_proxy": 0.526788571, "metrology_readiness_proxy": 0.680440393, "evidence_flow_readiness_proxy": 0.625092282, "epitaxy_handoff_readiness_proxy": 0.698076341, "growth_operator_gate": "review-loading-uniformity", "epitaxy_engineer_gate": "review-loading-uniformity", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "review-defect-relaxation", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_conditioned_like|coherently_strained_like|loading_sensitive_like|wafer_center_like|E05", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_conditioned_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_center_like", "ordered_state": "E05", "epitaxy_regime": "strain-retention-limited", "ordered_state_norm": 0.714285714, "substrate_surface_readiness_proxy": 0.599885714, "nucleation_coherence_proxy": 0.7672, "arrival_balance_proxy": 0.6764, "loading_control_proxy": 0.598736, "interface_margin_proxy": 0.549257143, "nucleation_settle_readiness_proxy": 0.491965714, "ordered_growth_readiness_proxy": 0.723929143, "within_wafer_uniformity_proxy": 0.692473051, "wafer_to_wafer_uniformity_proxy": 0.6442288, "wafer_edge_nonuniformity_burden_proxy": 0.44872, "thickness_handoff_readiness_proxy": 0.744590832, "composition_handoff_readiness_proxy": 0.735524114, "strain_retention_control_proxy": 0.588902875, "interface_continuity_readiness_proxy": 0.779857283, "process_drift_burden_proxy": 0.485735086, "model_limit_burden_proxy": 0.553645714, "metrology_readiness_proxy": 0.732968938, "evidence_flow_readiness_proxy": 0.640633495, "epitaxy_handoff_readiness_proxy": 0.72280563, "growth_operator_gate": "review-strain-retention", "epitaxy_engineer_gate": "review-strain-retention", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "bounded-teaching-review", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_germanium_heteroepitaxy_like|vapor_phase_reactor_like|interface_conditioned_like|coherently_strained_like|loading_sensitive_like|wafer_center_like|E04", "material_system_family": "silicon_germanium_heteroepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_conditioned_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_center_like", "ordered_state": "E04", "epitaxy_regime": "defect-relaxation-limited", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.617028571, "nucleation_coherence_proxy": 0.7872, "arrival_balance_proxy": 0.6804, "loading_control_proxy": 0.599696, "interface_margin_proxy": 0.560685714, "nucleation_settle_readiness_proxy": 0.477108571, "ordered_growth_readiness_proxy": 0.708557714, "within_wafer_uniformity_proxy": 0.699400137, "wafer_to_wafer_uniformity_proxy": 0.6557168, "wafer_edge_nonuniformity_burden_proxy": 0.43948, "thickness_handoff_readiness_proxy": 0.74258606, "composition_handoff_readiness_proxy": 0.743006171, "strain_retention_control_proxy": 0.572850487, "interface_continuity_readiness_proxy": 0.775185312, "process_drift_burden_proxy": 0.447298628, "model_limit_burden_proxy": 0.526788571, "metrology_readiness_proxy": 0.72038998, "evidence_flow_readiness_proxy": 0.622398882, "epitaxy_handoff_readiness_proxy": 0.72127456, "growth_operator_gate": "review-defect-relaxation", "epitaxy_engineer_gate": "review-defect-relaxation", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "review-defect-relaxation", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_overdriven_like|coherently_strained_like|loading_sensitive_like|wafer_center_like|E04", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_overdriven_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_center_like", "ordered_state": "E04", "epitaxy_regime": "metrology-readiness-limited", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.617028571, "nucleation_coherence_proxy": 0.6304, "arrival_balance_proxy": 0.6804, "loading_control_proxy": 0.599696, "interface_margin_proxy": 0.560685714, "nucleation_settle_readiness_proxy": 0.477108571, "ordered_growth_readiness_proxy": 0.651789714, "within_wafer_uniformity_proxy": 0.699400137, "wafer_to_wafer_uniformity_proxy": 0.6557168, "wafer_edge_nonuniformity_burden_proxy": 0.43948, "thickness_handoff_readiness_proxy": 0.71301038, "composition_handoff_readiness_proxy": 0.695646171, "strain_retention_control_proxy": 0.599136201, "interface_continuity_readiness_proxy": 0.702287026, "process_drift_burden_proxy": 0.479298628, "model_limit_burden_proxy": 0.602948571, "metrology_readiness_proxy": 0.711590243, "evidence_flow_readiness_proxy": 0.639678882, "epitaxy_handoff_readiness_proxy": 0.696782472, "growth_operator_gate": "review-metrology-readiness", "epitaxy_engineer_gate": "review-metrology-readiness", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "bounded-teaching-review", "downstream_metrology_priority_band": "substrate-interface" }, { "physical_key": "silicon_homoepitaxy_like|vapor_phase_reactor_like|interface_conditioned_like|coherently_strained_like|loading_sensitive_like|wafer_center_like|E04", "material_system_family": "silicon_homoepitaxy_like", "growth_platform_mode": "vapor_phase_reactor_like", "interface_readiness_state": "interface_conditioned_like", "strain_relaxation_state": "coherently_strained_like", "delivery_loading_state": "loading_sensitive_like", "wafer_position_state": "wafer_center_like", "ordered_state": "E04", "epitaxy_regime": "bounded-epitaxy-review", "ordered_state_norm": 0.571428571, "substrate_surface_readiness_proxy": 0.617028571, "nucleation_coherence_proxy": 0.7872, "arrival_balance_proxy": 0.6804, "loading_control_proxy": 0.599696, "interface_margin_proxy": 0.560685714, "nucleation_settle_readiness_proxy": 0.477108571, "ordered_growth_readiness_proxy": 0.708557714, "within_wafer_uniformity_proxy": 0.699400137, "wafer_to_wafer_uniformity_proxy": 0.6557168, "wafer_edge_nonuniformity_burden_proxy": 0.43948, "thickness_handoff_readiness_proxy": 0.74658606, "composition_handoff_readiness_proxy": 0.743006171, "strain_retention_control_proxy": 0.599136201, "interface_continuity_readiness_proxy": 0.787791026, "process_drift_burden_proxy": 0.447298628, "model_limit_burden_proxy": 0.526788571, "metrology_readiness_proxy": 0.724264266, "evidence_flow_readiness_proxy": 0.641598882, "epitaxy_handoff_readiness_proxy": 0.728244617, "growth_operator_gate": "review-process-drift", "epitaxy_engineer_gate": "review-throughput", "integration_gate": "epitaxy-handoff-blocked", "yield_gate": "bounded-teaching-review", "downstream_metrology_priority_band": "substrate-interface" } ], "sourceSummary": { "sources": 20, "claimNodes": 16, "linkStatus": "pass", "reachable": 7, "accessGated": 13, "hardFailures": 0, "networkErrors": 0, "sourceBodiesStored": false, "sourceNumericUse": "none" }, "currentPublicBaseline": { "version": "v109", "versionId": "appgprj_6a6f4d3affc0819189d99a8f29062540~appgver_005d791cd0f881919fe28dce4fc90e8f", "deploymentId": "appgdep_6a91677cd40081919caf523a472130f6", "sourceCommit": "c3888cc26eb434d9ca88e76889f781194044db4a", "changedByThisPacket": false, "publicVersionReserved": "none", "releaseDecision": "hold" }, "publicDelivery": { "mode": "metadata-manifest-plus-csv-rows", "rowsEmbedded": false, "rowArtifact": "epitaxy-chain-state-v1.csv", "rowArtifactSha256": "8AEEBF70FC2AC1E4A8BC66EBCF9B36AE3B2B9250EC6750BE6CC51793F6DEE8D6", "canonicalRowBearingArtifact": "epitaxy-chain-state-web-v1.json", "canonicalRowBearingArtifactSha256": "49037BC373DA425E4F789E3685669398B7281C0ABB5B8F512D2B0EEA4F2F508C", "independentValidationArtifact": "validation-report-v1.json", "independentValidationArtifactSha256": "6A467147356411034D5434AF3192F40D1471CC03C138A2A6774FB2325A552087", "sourceSpineArtifact": "epitaxy-chain-source-spine-v1.json", "sourceSpineArtifactSha256": "00ECEBDE9FF4466CB7ACEB33AA8DC33565F2976C78D80B7B508F0B7A70338AF3", "publicHoldArtifact": "public-hold-verification-v1.json", "publicHoldArtifactSha256": "8B0B6487DADFA0B6B5B9526B465E68CB63AF0301A529A76B6565E27232E806D7" }, "contracts": { "state": { "file": "epitaxy-chain-state-contract-v1.json", "sha256": "D2BA04EB2F8251D894CC4FD3B87D5798070941F4258C9AEF4196243B9DEE1118" }, "metrics": { "file": "epitaxy-chain-metric-contract-v1.json", "sha256": "1AEFD280E48CD2DEDD118007B156C11FD06BE490281E0263F4A766AA714D1716" }, "verifier": { "file": "independent-verifier-contract-v1.json", "sha256": "F1D93AAEDE8E88932200CD91A95D8F985282D30B46AF39A85A1D1816C3BAF597" }, "sourceCatalog": { "file": "source_catalog_v1.json", "sha256": "F9D925F3E1B6E704225A615433D661B1265505C6EA5269A84FF0388C41C98B64" }, "claimMap": { "file": "source_claim_map_v1.json", "sha256": "37742339E961D04AE41E7F5E5BF317137EAE81DBEABEE8FCC3CAC9FDE623687B" } }, "epitaxyRegimes": [ "substrate-interface-limited", "nucleation-coherence-limited", "arrival-balance-limited", "loading-uniformity-limited", "strain-retention-limited", "defect-relaxation-limited", "metrology-readiness-limited", "bounded-epitaxy-review" ], "requiredPhenomena": [ "material-system-and-growth-platform-separation", "substrate-surface-and-interface-readiness", "arrival-balance-loading-and-wafer-variation", "nucleation-growth-mode-and-surface-morphology", "coherent-strain-relaxation-and-misfit-defect", "threading-defect-composition-and-interface-handoff", "thickness-within-wafer-and-wafer-to-wafer-variation", "in-situ-observability-metrology-traceability-and-handoff" ], "upstreamBridges": [ { "sourceExperimentId": "SA-EQP-VAC-GAS-009", "allowedFields": [ "upstream_vac_gas_delivery_band", "upstream_vac_gas_stability_band", "upstream_vac_gas_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-DEP-CVD-PECVD-013", "allowedFields": [ "upstream_cvd_pecvd_reaction_band", "upstream_cvd_pecvd_uniformity_band", "upstream_cvd_pecvd_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-DEP-LPCVD-FURNACE-020", "allowedFields": [ "upstream_lpcvd_interface_band", "upstream_lpcvd_thermal_history_band", "upstream_lpcvd_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-ETCH-WET-019", "allowedFields": [ "upstream_wet_surface_band", "upstream_wet_residue_band", "upstream_wet_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false } ], "downstreamBridge": { "targetExperimentId": "SA-MET-INSPECTION-030", "allowedFields": [ "downstream_structural_uniformity_band", "downstream_interface_history_band", "downstream_defect_property_priority_band", "downstream_metrology_priority_band", "downstream_inspection_evidence_gate", "teaching_epitaxy_handoff_gate" ], "physicalUnitsAllowed": false, "automaticRecipeHandoffAllowed": false, "automaticFilmHandoffAllowed": false, "automaticEquipmentActionAllowed": false, "automaticDispositionAllowed": false }, "replacementEvidenceRequirements": [ "accountable run, lot, wafer, material-system, growth-platform, process, equipment, metrology, and disposition ownership", "revisioned reactor or chamber, source delivery, carrier, heating, pumping, monitoring, and sequencing configuration", "owned substrate identity, orientation, incoming surface, preparation, prior-process, interface, and nucleation-layer histories", "owned material-system-specific precursor or beam-source identities, purity, delivery, contamination, and exhaust evidence", "owned vapor-phase or molecular-beam arrival, transport, adsorption, desorption, decomposition, and surface-reaction evidence", "owned temperature, pressure, flow, flux, residence, loading, depletion, rotation, spatial, and thermal histories", "owned lattice, composition, mismatch, strain, stress, critical-thickness, relaxation, and defect evidence appropriate to the material system", "owned growth-mode, nucleation, step-flow, islanding, bunching, coalescence, reconstruction, and morphology measurements", "owned thickness, composition, doping, interface abruptness, within-wafer, wafer-to-wafer, run-to-run, and tool-to-tool variation evidence", "owned misfit, threading, stacking-fault, micropipe, pit, particle, contamination, roughness, bow, and crystal-quality evidence where applicable", "owned in-situ observation method, signal lineage, calibration, uncertainty, threshold, latency, and false-trigger review", "owned ex-situ metrology method, sampling plan, calibration state, detection limits, uncertainty, and raw-data lineage", "explicit separation of Si, SiGe, III-V, SiC, GaN, and MBE claims with no inferred cross-material physical values", "explicit validation of every physical growth, transport, strain, defect, morphology, or uniformity model before use", "independent review of model boundary, proxy ownership, replacement completeness, and non-predictive teaching use", "downstream inspection approval and accountable integration, yield, reliability, and disposition review" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless epitaxy-chain teaching replay only. No physical chemistry, material identity, sequence, temperature, ramp, soak, pressure, flow, transport, depletion fraction, oxidation, nitridation, deposition rate, thickness, uniformity, composition, stress, surface, interface, defect, metrology result, equipment state, recipe, qualification, reliability, or production fitness is computed or implied." }