{
  "schema": "semiagora.deep-simulation.v1",
  "execution_mode": "precomputed-only",
  "experiment_id": "SA-DEV-001-GAA-NANOSHEET-001",
  "slug": "gaa-nanosheet-electrostatics",
  "title": "GAA nanosheet width, stack count, and electrostatics",
  "model_boundary": "normalized electrostatic-control model, not calibrated TCAD",
  "public_boundary": [
    "No live server solver execution.",
    "No PDK or proprietary compact-model ingestion, measured-silicon claim, qualification signoff, upload, account, payment, comment, newsletter signup, or submission workflow.",
    "Third-party tools and source pages remain source links unless separately reviewed."
  ],
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    },
    {
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      "domain": "device",
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      "teaching_point": "GAA width and sheet count trade drive against capacitance and variability, not just more channel area."
    }
  ],
  "methods": [
    "Electrostatic control is reduced by width and variability, then improved by added sheets.",
    "Drive scales with sheet count, width, and control index.",
    "PPA score penalizes capacitance and Vt variability."
  ],
  "limitations": [
    "No real nanosheet cross-section, inner spacer, source/drain stressor, contact resistance, self-heating, or CFET/forksheet process is included.",
    "No roadmap production claim is made.",
    "Real advanced-device work needs calibrated TCAD, process integration assumptions, variability data, and circuit benchmark evidence."
  ],
  "evidence": [
    "v64 deep results store every sheet, width, variability, control, drive, capacitance, and score row.",
    "CSV export preserves the GAA comparison.",
    "The domain roadmap keeps this as a device-to-circuit bridge, not a node forecast."
  ],
  "sources": [
    {
      "label": "DEVSIM",
      "url": "https://github.com/devsim/devsim",
      "note": "Open device/TCAD candidate for future finite-volume replacement datasets."
    },
    {
      "label": "IEEE IRDS",
      "url": "https://irds.ieee.org/",
      "note": "Roadmap source spine for FinFET, GAA, nanosheet, forksheet, and CFET vocabulary."
    },
    {
      "label": "GAA nanosheet source/drain trimming study",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC9321815/",
      "note": "Open paper context for GAA nanosheet parasitic RC and source/drain engineering vocabulary."
    }
  ],
  "source_seed_run": "07_assets/factory_lab/experiments/DEEP_SEMICONDUCTOR_V64_2026-08-14/"
}