# SA-PWR-GAN-DYNAMIC-RON-003 - GaN Dynamic-Ron And Trap-Memory Replay

Version: 2026-08-22-v88

## Purpose

This browser CSV replay teaches how GaN dynamic-Ron evidence depends on stress class, drain-bias class, buffer/substrate context, recovery window, temperature class, switching context, current-collapse proxy, thermal-risk proxy, measurement caution, and the next safe check. It is a report-literacy and evidence-planning model, not a measurement, standard, device recommendation, or qualification result.

## Dataset

- Rows: 5120
- Buffer/substrate contexts: 5
- Off-state stress classes: 4
- Drain-bias classes: 4
- Recovery windows: 4
- Temperature classes: 4
- Switching contexts: 4
- Live server runs: 0

## Method

1. Define conceptual GaN buffer/substrate contexts and stress/recovery axes without process recipes or product parameters.
2. Sweep stress, drain-bias, recovery-window, temperature, and switching-context classes.
3. Compute synthetic teaching proxies for trap memory, current collapse, dynamic-Ron ratio, recovery score, thermal risk, measurement caution, evidence maturity, and decision gate.
4. Store source links, CSV, typed JSON, model card, and public boundary together.

## Public Boundary

- No JEDEC standard body, article body, figure, waveform, test script, product data, supplier process detail, or measurement table is copied.
- No live TCAD, SPICE, RF, electrothermal, double-pulse, or server-side solver is active.
- No wafer recipe, epitaxy condition, package recommendation, supplier ranking, device qualification, reliability signoff, product recommendation, or public service intake is enabled.

## Replacement Evidence Needed

Real engineering reuse would need owned pulsed I-V or double-pulse setup details, readout timing, clamp behavior, thermal context, switching waveforms, package parasitics, device history, aging data, calibration records, and owner approval.