# SA-PWR-GAN-SIC-002 - GaN-on-SiC HEMT substrate/device/process chain

Version: 2026-08-21-v83

## Purpose

This is an original SemiAgora browser replay for studying how semi-insulating SiC, GaN buffer strategy, HEMT mode, thermal package path, reliability stress context, and application context should travel together before a GaN HEMT claim is reused.

## What Is Precomputed

- 2304 synthetic teaching rows.
- Four substrate profiles: semi-insulating SiC RF reference, high-resistivity SiC scale-up, GaN-on-Si cost reference, and bonded GaN-SiC interface watch.
- Four buffer/device-process strategies, four HEMT modes, three thermal stacks, three reliability contexts, and four application contexts.
- Proxy outputs for thermal relief, RF loss risk, buffer trap risk, dynamic Ron risk, breakdown margin, power density, mobility access, package heat path, integration risk, reliability review, and application fit.

## Public Boundary

- No epitaxy recipe, gas flow, wafer recipe, process setting, equipment operation, or fab instruction.
- No live TCAD, RF simulator, electrothermal solver, SPICE, model fitting, layout extraction, or server-side execution.
- No product recommendation, qualified reliability result, foundry claim, supplier ranking, or cost/availability claim.
- No paid/licensed source text, vendor table, restricted data, process file, or figure is copied.

## Source Spine

- [Wolfspeed silicon carbide for RF devices](https://www.wolfspeed.com/products/materials/sic-for-rf-devices/) - Public source for HPSI SiC substrate and GaN epitaxy vocabulary, including high-purity semi-insulating material framing.
- [Coherent SiC for RF electronics](https://www.coherent.com/materials/wide-bandgap-electronics/sic-substrates-epitaxy/sic-for-rf-electronics) - Public source for GaN-on-SiC RF power amplifier substrate framing, high resistivity, thermal conductivity, and diameter scale-up vocabulary.
- [Qorvo GaN primer](https://www.qorvo.com/about/news-events/blogs/a-primer-on-gan-and-3-reasons-it-outperforms-other-semiconductors-in-rf-applications) - Public source for GaN-on-SiC versus GaN-on-Si RF/power context and the link between GaN power density and SiC thermal/RF behavior.
- [DOE wide bandgap power electronics assessment](https://www.energy.gov/documents/qtr-ch8-wide-bandgap-ta-feb-13-2015pdf) - Public source for wide-bandgap power electronics framing: voltage, temperature, switching frequency, efficiency, packaging, and reliability.
- [PowerAmerica WBG short course](https://poweramericainstitute.org/2026-short-course/) - Public source for SiC/GaN education topics including GaN reliability, dynamic Ron, TDDB, hot-carrier wearout, and mission-profile vocabulary.
- [imec high-k GaN MOS-HEMT reliability](https://www.imec-int.com/en/articles/dc-reliability-high-k-gan-si-mos-hemts-mm-wave-power-amplifiers) - Public source for GaN RF MOS-HEMT scaling, high-k gate stack, charge trapping, and DC reliability vocabulary.
- [GaN-SiC thermal boundary conductance paper](https://arxiv.org/abs/1905.04171) - Open metadata/source anchor for GaN-SiC thermal boundary conductance and channel-temperature-limited HEMT framing.

## How To Reuse

Use the CSV for teaching filters and figure planning only. Replace the proxies with rights-cleared owned thermal, RF, dynamic Ron, buffer-trap, gate-stack, and mission-profile evidence before making stronger engineering claims.