{
  "schema": "semiagora.gan-sic-hemt-substrate-chain.v1",
  "version": "2026-08-21-v83",
  "experiment_id": "SA-PWR-GAN-SIC-002",
  "title": "GaN-on-SiC HEMT substrate/device/process chain",
  "execution_mode": "precomputed_browser_csv_replay_only",
  "summary": "An original SemiAgora proxy map for learning how semi-insulating SiC, GaN buffer strategy, HEMT mode, thermal package path, reliability stress, and application context shape RF/power GaN HEMT evidence needs.",
  "counts": {
    "rows": 2304,
    "substrate_profiles": 4,
    "epitaxy_buffer_strategies": 4,
    "hemt_modes": 4,
    "thermal_stacks": 3,
    "reliability_contexts": 3,
    "application_contexts": 4,
    "liveServerRuns": 0
  },
  "decision_gate_counts": {
    "reference_case": 12,
    "trap_dynamic_ron_review": 1307,
    "candidate_with_mission_profile_review": 33,
    "interface_tbc_review": 463,
    "normally_off_reliability_review": 165,
    "thermal_path_review": 324
  },
  "substrate_averages": {
    "thermal_relief_index": [
      {
        "substrate_profile": "semi_insulating_sic_rf_reference",
        "label": "Semi-insulating SiC RF reference",
        "thermal_relief_index": "0.884"
      },
      {
        "substrate_profile": "high_resistivity_sic_scaleup",
        "label": "High-resistivity SiC scale-up",
        "thermal_relief_index": "0.824"
      },
      {
        "substrate_profile": "gan_on_si_cost_reference",
        "label": "GaN-on-Si cost reference",
        "thermal_relief_index": "0.424"
      },
      {
        "substrate_profile": "bonded_gan_sic_interface_watch",
        "label": "Bonded GaN-SiC interface watch",
        "thermal_relief_index": "0.784"
      }
    ],
    "rf_loss_risk_proxy": [
      {
        "substrate_profile": "semi_insulating_sic_rf_reference",
        "label": "Semi-insulating SiC RF reference",
        "rf_loss_risk_proxy": "0.210"
      },
      {
        "substrate_profile": "high_resistivity_sic_scaleup",
        "label": "High-resistivity SiC scale-up",
        "rf_loss_risk_proxy": "0.258"
      },
      {
        "substrate_profile": "gan_on_si_cost_reference",
        "label": "GaN-on-Si cost reference",
        "rf_loss_risk_proxy": "0.532"
      },
      {
        "substrate_profile": "bonded_gan_sic_interface_watch",
        "label": "Bonded GaN-SiC interface watch",
        "rf_loss_risk_proxy": "0.279"
      }
    ],
    "application_fit_score": [
      {
        "substrate_profile": "semi_insulating_sic_rf_reference",
        "label": "Semi-insulating SiC RF reference",
        "application_fit_score": "0.548"
      },
      {
        "substrate_profile": "high_resistivity_sic_scaleup",
        "label": "High-resistivity SiC scale-up",
        "application_fit_score": "0.489"
      },
      {
        "substrate_profile": "gan_on_si_cost_reference",
        "label": "GaN-on-Si cost reference",
        "application_fit_score": "0.204"
      },
      {
        "substrate_profile": "bonded_gan_sic_interface_watch",
        "label": "Bonded GaN-SiC interface watch",
        "application_fit_score": "0.439"
      }
    ],
    "integration_risk_proxy": [
      {
        "substrate_profile": "semi_insulating_sic_rf_reference",
        "label": "Semi-insulating SiC RF reference",
        "integration_risk_proxy": "0.977"
      },
      {
        "substrate_profile": "high_resistivity_sic_scaleup",
        "label": "High-resistivity SiC scale-up",
        "integration_risk_proxy": "1.031"
      },
      {
        "substrate_profile": "gan_on_si_cost_reference",
        "label": "GaN-on-Si cost reference",
        "integration_risk_proxy": "1.160"
      },
      {
        "substrate_profile": "bonded_gan_sic_interface_watch",
        "label": "Bonded GaN-SiC interface watch",
        "integration_risk_proxy": "1.211"
      }
    ]
  },
  "top_fit_candidates": [
    {
      "case_id": "GAN_SIC_0025",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.906",
      "decision_gate": "reference_case"
    },
    {
      "case_id": "GAN_SIC_0169",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "thin_or_buffer_reduced",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.894",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0313",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "trap_managed_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.885",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0013",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "via_dense_package_heat_path",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.883",
      "decision_gate": "reference_case"
    },
    {
      "case_id": "GAN_SIC_0157",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "thin_or_buffer_reduced",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "via_dense_package_heat_path",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.873",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0457",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "bonded_or_direct_interface_watch",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.871",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0301",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "trap_managed_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "via_dense_package_heat_path",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.862",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0001",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "substrate_only_reference",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.856",
      "decision_gate": "reference_case"
    },
    {
      "case_id": "GAN_SIC_0029",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "pulsed_iv_dynamic_ron_watch",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.851",
      "decision_gate": "trap_dynamic_ron_review"
    },
    {
      "case_id": "GAN_SIC_0445",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "bonded_or_direct_interface_watch",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "via_dense_package_heat_path",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.851",
      "decision_gate": "interface_tbc_review"
    },
    {
      "case_id": "GAN_SIC_0145",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "thin_or_buffer_reduced",
      "hemt_mode": "rf_depletion_hemt",
      "thermal_stack": "substrate_only_reference",
      "reliability_context": "dc_bias_baseline",
      "application_context": "macro_rf_power_amplifier",
      "application_fit_score": "0.846",
      "decision_gate": "candidate_with_mission_profile_review"
    },
    {
      "case_id": "GAN_SIC_0062",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "mmwave_scaled_mos_hemt",
      "thermal_stack": "coin_or_flange_heat_spreader",
      "reliability_context": "dc_bias_baseline",
      "application_context": "mmwave_front_end",
      "application_fit_score": "0.842",
      "decision_gate": "interface_tbc_review"
    }
  ],
  "most_trap_limited_rows": [
    {
      "case_id": "GAN_SIC_0083",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "normally_off_mis_hemt",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.409",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0095",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "normally_off_mis_hemt",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.399",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0107",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "normally_off_mis_hemt",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.391",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0117",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.408",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0118",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.405",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0119",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.409",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0120",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.410",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0129",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.398",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0130",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.395",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0131",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.399",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0132",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.400",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    },
    {
      "case_id": "GAN_SIC_0141",
      "substrate_profile": "semi_insulating_sic_rf_reference",
      "epitaxy_buffer_strategy": "aln_nucleation_gan_buffer",
      "hemt_mode": "cascode_power_fet",
      "reliability_context": "hard_switching_mission_profile",
      "dynamic_ron_risk": "1.000",
      "buffer_trap_risk": "0.390",
      "next_safe_check": "Run pulsed I-V and dynamic Ron literature/owned-data review before trusting the row."
    }
  ],
  "role_views": [
    {
      "role": "Substrate and materials engineer",
      "reads": [
        "substrate_profile",
        "thermal_relief_index",
        "rf_loss_risk_proxy",
        "substrate_cost_scale_index"
      ],
      "asks": "Does the substrate claim need high-resistivity, HPSI, wafer-scale, or thermal boundary evidence before it is reused?"
    },
    {
      "role": "Epitaxy and process integration engineer",
      "reads": [
        "epitaxy_buffer_strategy",
        "buffer_trap_risk",
        "integration_risk_proxy",
        "decision_gate"
      ],
      "asks": "Is the row trap-limited, interface-limited, or still only a public vocabulary screen?"
    },
    {
      "role": "RF/power device engineer",
      "reads": [
        "hemt_mode",
        "power_density_proxy",
        "mobility_access_proxy",
        "dynamic_ron_risk",
        "breakdown_margin_proxy"
      ],
      "asks": "Does the device mode match RF, mmWave, or power-converter evidence without pretending to be a product recommendation?"
    },
    {
      "role": "Package and reliability engineer",
      "reads": [
        "thermal_stack",
        "reliability_context",
        "package_heat_path_score",
        "reliability_review_score",
        "next_safe_check"
      ],
      "asks": "What thermal path, pulsed I-V, dynamic Ron, TDDB, HCI, and mission-profile checks are missing?"
    }
  ],
  "public_boundary": [
    "No GaN epitaxy recipe, process recipe, gas flow, equipment setting, or wafer specification is included.",
    "No live server TCAD, electrothermal solver, SPICE, RF simulator, layout extraction, product selection, or equipment-control workflow is active.",
    "No qualified RF power amplifier, power converter, foundry, wafer supplier, reliability qualification, cost, availability, or product recommendation claim is made.",
    "Rows are normalized synthetic teaching proxies and require rights-cleared owned data before engineering reuse.",
    "Sources are link-only anchors; no paid article body, vendor data sheet table, figure, process file, or proprietary measurement dataset is copied."
  ],
  "sources": [
    {
      "label": "Wolfspeed silicon carbide for RF devices",
      "url": "https://www.wolfspeed.com/products/materials/sic-for-rf-devices/",
      "note": "Public source for HPSI SiC substrate and GaN epitaxy vocabulary, including high-purity semi-insulating material framing."
    },
    {
      "label": "Coherent SiC for RF electronics",
      "url": "https://www.coherent.com/materials/wide-bandgap-electronics/sic-substrates-epitaxy/sic-for-rf-electronics",
      "note": "Public source for GaN-on-SiC RF power amplifier substrate framing, high resistivity, thermal conductivity, and diameter scale-up vocabulary."
    },
    {
      "label": "Qorvo GaN primer",
      "url": "https://www.qorvo.com/about/news-events/blogs/a-primer-on-gan-and-3-reasons-it-outperforms-other-semiconductors-in-rf-applications",
      "note": "Public source for GaN-on-SiC versus GaN-on-Si RF/power context and the link between GaN power density and SiC thermal/RF behavior."
    },
    {
      "label": "DOE wide bandgap power electronics assessment",
      "url": "https://www.energy.gov/documents/qtr-ch8-wide-bandgap-ta-feb-13-2015pdf",
      "note": "Public source for wide-bandgap power electronics framing: voltage, temperature, switching frequency, efficiency, packaging, and reliability."
    },
    {
      "label": "PowerAmerica WBG short course",
      "url": "https://poweramericainstitute.org/2026-short-course/",
      "note": "Public source for SiC/GaN education topics including GaN reliability, dynamic Ron, TDDB, hot-carrier wearout, and mission-profile vocabulary."
    },
    {
      "label": "imec high-k GaN MOS-HEMT reliability",
      "url": "https://www.imec-int.com/en/articles/dc-reliability-high-k-gan-si-mos-hemts-mm-wave-power-amplifiers",
      "note": "Public source for GaN RF MOS-HEMT scaling, high-k gate stack, charge trapping, and DC reliability vocabulary."
    },
    {
      "label": "GaN-SiC thermal boundary conductance paper",
      "url": "https://arxiv.org/abs/1905.04171",
      "note": "Open metadata/source anchor for GaN-SiC thermal boundary conductance and channel-temperature-limited HEMT framing."
    }
  ],
  "files": {
    "csv": "/data/gan-sic-hemt-substrate-chain-v83.csv",
    "model_card": "/data/gan-sic-hemt-substrate-chain-model-card-v1.md",
    "simulation_route": "/simulations/gan-sic-hemt-substrate-chain",
    "lesson_route": "/learn/gan-sic-hemt-substrate-chain",
    "lab_route": "/labs/gan-sic-hemt-substrate-chain"
  }
}