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response, or process diagnosis." }, { "node_id": "har-microtrenching", "topic": "Sidewall interaction, ion access, and charging can contribute to localized bottom-edge removal distinct from global bowing.", "source_ids": [ "westerheim-contact-bias-1995", "vyvoda-hardmask-charging-1999", "viennaps-documentation" ], "boundary": "The microtrenching burden contains no reflected-ion distribution, material yield, trench depth, bias condition, or copied simulation." }, { "node_id": "har-dram-capacitor-context", "topic": "DRAM capacitor-cell etch is a distinct high-aspect-ratio application context with profile, mask, and integration constraints.", "source_ids": [ "lam-vantex-taxonomy", "tel-etch-requirements-2025", "donnelly-kornblit-2013" ], "boundary": "DRAM-capacitor-like is an application label only; it names no customer stack, node, dimension, chemistry, tool, or qualified process." }, { "node_id": "har-nand-channel-context", "topic": "Three-dimensional NAND channel-hole etch requires deep-feature directionality and profile control.", "source_ids": [ "lam-vantex-taxonomy", "tel-etch-requirements-2025", "applied-etch-overview" ], "boundary": "NAND-channel-like contains no layer count, dimension, vendor performance, product comparison, recipe, or production claim." }, { "node_id": "har-contact-context", "topic": "Contact etch requires separate tracking of bottom opening, distortion, sidewall state, and mask retention.", "source_ids": [ "kim-contact-distortion-2015", "westerheim-contact-bias-1995", "lam-vantex-taxonomy" ], "boundary": "Contact-like contains no contact dimension, stack, stop layer, profile target, electrical result, or process window." }, { "node_id": "har-tsv-context", "topic": "TSV etch is a distinct packaging and three-dimensional-integration context requiring profile and metrology evidence.", "source_ids": [ "nist-metrology-3d-integration", "jeong-tsv-profile-2026", "oxford-drie-taxonomy" ], "boundary": "TSV-like contains no via dimension, depth, uniformity, DRIE cycle, scallop metric, liner requirement, or packaging qualification." }, { "node_id": "har-metrology-replacement-evidence", "topic": "Profile, bottom-open, mask, distortion, and uniformity claims require owned metrology, uncertainty, traceability, and accountable review.", "source_ids": [ "nist-plasma-process-metrology", "nist-metrology-3d-integration", "doe-fes-plasma-semiconductor-2023" ], "boundary": "No generated row is measured, calibrated, qualified, or suitable for wafer disposition or endpoint action." }, { "node_id": "har-model-validation-open-reproduction", "topic": "Feature-scale reproduction requires pinned software, license, dependencies, geometry, parameters, determinism posture, and independent measurement comparison.", "source_ids": [ "viennaps-documentation", "viennaps-process-interface", "viennaps-repository", "huard-neutral-transport-2017" ], "boundary": "ViennaPS remains link-only; no GPL code, default, example, geometry, parameter, solver output, or named-tool accuracy claim enters this packet." }, { "node_id": "har-categorical-bridge", "topic": "RIE and particle-transport context may enter HAR only as categorical teaching metadata, while downstream metrology handoff remains replacement-evidence gated.", "source_ids": [ "doe-fes-plasma-semiconductor-2023", "nist-plasma-process-metrology", "huard-neutral-transport-2017", "viennaps-documentation" ], "boundary": "No bridge imports physical state, geometry, recipe, equipment action, endpoint decision, wafer disposition, qualification, or signoff." } ], "hardBoundary": "No source body, figure, table, equation, coefficient, geometry, gas identity, material recipe, operating value, dimension, layer count, measurement trace, vendor result, source code, named-tool output, or publication-derived numeric value enters the generated SemiAgora packet.", "numericUse": "none", "artifactUse": "No source body, equation, coefficient, code, geometry, recipe, dimension, measurement, profile, parameter, or output is embedded." }, "contractArtifacts": { "state": { "file": "har-state-contract-v1.json", "sha256": "F9DD5CCE8A516FC6FE3E20451E927EB9AC935E44E897E50EC537F1E61E747FF8" }, "metric": { "file": "har-metric-contract-v1.json", "sha256": "BCDA431859C98012F000DBCBB830094E5A1A43379269842A2F36F20AA3A32A9C" }, "modelCard": { "file": "har-model-card-v1.md", "sha256": "FAEC45B5F26D8CAF50E9BF31D6332E94E024F1469EBEAF88C44F36D965B101C2" }, "sourceSpine": { "file": "har-source-spine-v1.json", "sha256": "EEF91713CD67E74F70DDD7A677DA2539BC33DCD5FC1A13F5986F56C60FCFB095" }, "verifierContract": { "file": "independent-verifier-contract-v1.json", "sha256": "D1E52A01B3819F67924559D47ACFF75C9FD65628D766355D1421EBF927E8671B" } }, "profileRegimes": [ "transport-starved", "charging-deflected", "mask-limited", "sidewall-protection-limited", "bottom-open-limited", "distortion-dominant", "notch-microtrench-risk", "bounded-profile" ], "requiredPhenomena": [ "ARDE", "transport-starvation", "charging", "bowing", "twisting", "mask-loss", "notching", "microtrenching" ], "upstreamBridges": [ { "sourceExperimentId": "SA-PROC-ETCH-RIE-010", "allowedFields": [ "upstream_rie_mechanism_band", "upstream_rie_directionality_band", "upstream_rie_particle_mix_band", "upstream_rie_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-FEATURE-PMC-007", "allowedFields": [ "upstream_pmc_transport_band", "upstream_pmc_surface_interaction_band", "upstream_pmc_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false } ], "downstreamBridge": { "targetExperimentId": "SA-MET-INSPECTION-030", "allowedFields": [ "downstream_profile_shape_band", "downstream_bottom_open_band", "downstream_mask_state_band", "downstream_metrology_priority_band", "downstream_profile_evidence_gate", "teaching_profile_handoff_gate" ], "physicalUnitsAllowed": false, "automaticRecipeHandoffAllowed": false, "automaticGeometryHandoffAllowed": false, "automaticEquipmentActionAllowed": false, "automaticDispositionAllowed": false }, "replacementEvidenceRequirements": [ "accountable run identifier, wafer ownership, and review owner", "revisioned feature geometry, mask geometry, pattern density, and sampling locations", "owned material stack, interfaces, incoming state, and stop-layer identity", "calibrated ion energy and angular evidence or validated equivalents with uncertainty", "calibrated ion current or flux evidence with uncertainty", "owned neutral or radical density or flux evidence with uncertainty", "surface composition, sidewall protection, and residue evidence", "top, middle, bottom, and depth-resolved profile CD evidence with uncertainty", "feature depth, sidewall angle, bowing, twisting, tilting, and distortion evidence", "notch and microtrench measurements with definitions and detection limits", "mask thickness, mask loss, target removal, stop-layer removal, and selectivity evidence", "bottom-open and not-open classification tied to independent metrology", "within-wafer, wafer-to-wafer, pattern-density, and feature-family variation evidence", "chamber history, consumable state, incoming wafer state, and tool-state traceability", "endpoint signal tied to independent post-process metrology", "measurement-system analysis, uncertainty budget, and gauge capability", "model version, geometry, parameters, determinism posture, and residual analysis", "independent model-to-measurement review, limitations review, and accountable approval" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless teaching data only; no physical etch, geometry, chemistry, recipe, equipment control, calibration, qualification, production, or named-tool claim." }