{
  "schema": "semiagora.har-source-spine.v1",
  "version": "2026-08-28-har-v1",
  "experimentId": "SA-PROC-ETCH-HAR-011",
  "generatedAt": "2026-08-28T00:00:00.000Z",
  "sources": [
    {
      "id": "doe-fes-plasma-semiconductor-2023",
      "label": "Plasma Science for Microelectronics Nanofabrication Workshop Report",
      "publisher": "U.S. Department of Energy, Office of Science, Fusion Energy Sciences",
      "url": "https://science.osti.gov/-/media/fes/pdf/2023/DOE_FES_PlasmaScience_Semiconductors_Final.pdf",
      "sourceType": "official-government-workshop-report",
      "rightsStatus": "link-only; DOE and report notices apply",
      "use": "Cross-scale plasma, surface, diagnostics, uncertainty, and validation boundary.",
      "numericUse": "none",
      "artifactUse": "no body text, figure, table, equation, priority wording, value, or roadmap graphic copied"
    },
    {
      "id": "gottscho-microscopic-uniformity-1992",
      "label": "Microscopic uniformity in plasma etching",
      "publisher": "Journal of Vacuum Science & Technology B / AVS",
      "url": "https://doi.org/10.1116/1.586180",
      "sourceType": "primary-peer-reviewed-review",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "ARDE, microscopic nonuniformity, transport, and charging taxonomy.",
      "numericUse": "none",
      "artifactUse": "no terminology passage, equation, dimensional analysis, figure, table, value, or conclusion wording copied"
    },
    {
      "id": "donnelly-kornblit-2013",
      "label": "Plasma etching: Yesterday, today, and tomorrow",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.4819316",
      "sourceType": "primary-peer-reviewed-review",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Plasma-surface mechanism, selectivity, damage, and profile context.",
      "numericUse": "none",
      "artifactUse": "no review text, figure, table, equation, value, chemistry, or process example copied"
    },
    {
      "id": "huard-neutral-transport-2017",
      "label": "Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.4973953",
      "sourceType": "primary-peer-reviewed-model-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Neutral transport starvation, ARDE, profile coupling, and model-validation ownership.",
      "numericUse": "none",
      "artifactUse": "no model equation, coefficient, geometry, species condition, parameter, result, figure, or value copied"
    },
    {
      "id": "arnold-sawin-feature-charging-1991",
      "label": "Charging of pattern features during plasma etching",
      "publisher": "Journal of Applied Physics / AIP Publishing",
      "url": "https://doi.org/10.1063/1.350241",
      "sourceType": "primary-peer-reviewed-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Feature charging and ion-trajectory-deflection evidence ownership.",
      "numericUse": "none",
      "artifactUse": "no charging model, potential, trajectory, geometry, equation, coefficient, figure, or value copied"
    },
    {
      "id": "vyvoda-hardmask-charging-1999",
      "label": "Hardmask charging during Cl2 plasma etching of silicon",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.582056",
      "sourceType": "primary-peer-reviewed-model-and-experiment-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Hardmask charging, deflection, notching, and microtrenching evidence ownership.",
      "numericUse": "none",
      "artifactUse": "no chemistry, condition, model, micrograph, profile, equation, coefficient, result, or value copied"
    },
    {
      "id": "westerheim-contact-bias-1995",
      "label": "Substrate bias effects in high-aspect-ratio SiO2 contact etching using an inductively coupled plasma reactor",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.579841",
      "sourceType": "primary-peer-reviewed-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "RIE lag, profile, and microtrenching evidence ownership.",
      "numericUse": "none",
      "artifactUse": "no recipe, material condition, rate, profile, model, figure, table, conclusion wording, or value copied"
    },
    {
      "id": "kim-contact-distortion-2015",
      "label": "Study on contact distortion during high aspect ratio contact SiO2 etching",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.4901872",
      "sourceType": "primary-peer-reviewed-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Contact-hole distortion, mask, sidewall, tilting, and evidence-replacement ownership.",
      "numericUse": "none",
      "artifactUse": "no recipe, stack, micrograph, distortion metric, geometry, table, process result, or value copied"
    },
    {
      "id": "nist-cryo-har-gratings-2016",
      "label": "Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/cryogenic-etching-high-aspect-ratio-400-nm-pitch-silicon-gratings",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only; journal and NIST notices apply",
      "use": "HAR profile, mask, selectivity, and process-specific measurement ownership.",
      "numericUse": "none",
      "artifactUse": "title is bibliographic only; no dimension, process condition, mask result, profile, image, paper body, or value copied"
    },
    {
      "id": "nist-plasma-process-metrology",
      "label": "Plasma Process Metrology",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/programs-projects/plasma-process-metrology",
      "sourceType": "official-government-program-page",
      "rightsStatus": "link-only",
      "use": "Diagnostics, traceability, uncertainty, and endpoint evidence boundary.",
      "numericUse": "none",
      "artifactUse": "no measurement, model, recommendation, apparatus, image, or value copied"
    },
    {
      "id": "nist-metrology-3d-integration",
      "label": "Metrology for 3D Integration",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/metrology-3d-integration",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only; publication and NIST notices apply",
      "use": "TSV and three-dimensional integration metrology ownership.",
      "numericUse": "none",
      "artifactUse": "no standard text, method, dimension, workflow, figure, table, conclusion, or value copied"
    },
    {
      "id": "jeong-tsv-profile-2026",
      "label": "Through-silicon via etch uniformity enhancement and aspect-ratio influence on etch rate and profile",
      "publisher": "Journal of Vacuum Science & Technology B / AVS",
      "url": "https://doi.org/10.1116/6.0005567",
      "sourceType": "primary-peer-reviewed-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "TSV profile, aspect-ratio influence, and within-wafer evidence ownership.",
      "numericUse": "none",
      "artifactUse": "no process condition, dimension, rate, profile, uniformity result, figure, table, or value copied"
    },
    {
      "id": "iue-aguinsky-reactive-transport",
      "label": "Applications: reactive transport in semiconductor processing",
      "publisher": "TU Wien Institute for Microelectronics",
      "url": "https://www.iue.tuwien.ac.at/phd/aguinsky/11.html",
      "sourceType": "official-university-dissertation-section",
      "rightsStatus": "link-only; university and author notices apply",
      "use": "ARDE, transport, ion shading, diffusion, charge, and modeling taxonomy.",
      "numericUse": "none",
      "artifactUse": "no equation, coefficient, species model, geometry, implementation, image, result, or value copied"
    },
    {
      "id": "viennaps-documentation",
      "label": "ViennaPS Documentation",
      "publisher": "ViennaTools",
      "url": "https://viennatools.github.io/ViennaPS/",
      "sourceType": "official-open-software-documentation",
      "rightsStatus": "link-only; documentation and repository licenses apply",
      "use": "Feature-scale topography framework and reproduction-boundary anchor.",
      "numericUse": "none",
      "artifactUse": "no source code, example, geometry, screenshot, parameter, result, or documentation body copied"
    },
    {
      "id": "viennaps-process-interface",
      "label": "Running a Process",
      "publisher": "ViennaTools",
      "url": "https://viennatools.github.io/ViennaPS/process/",
      "sourceType": "official-open-software-documentation",
      "rightsStatus": "link-only; documentation and repository licenses apply",
      "use": "Domain, process-model, duration, flux-engine, and reproducibility ownership.",
      "numericUse": "none",
      "artifactUse": "no API code, defaults, parameter, algorithm, geometry, output, or documentation wording copied"
    },
    {
      "id": "viennaps-repository",
      "label": "ViennaPS Repository",
      "publisher": "ViennaTools / GitHub",
      "url": "https://github.com/ViennaTools/ViennaPS",
      "sourceType": "official-open-software-repository",
      "rightsStatus": "link-only; repository license applies; current releases declare GNU GPL v3",
      "use": "License, version, dependency, and isolated-reproduction boundary.",
      "numericUse": "none",
      "artifactUse": "no code, test, example, dependency, geometry, parameter, binary, or output copied"
    },
    {
      "id": "lam-vantex-taxonomy",
      "label": "Vantex Product Family",
      "publisher": "Lam Research",
      "url": "https://www.lamresearch.com/product/vantex/",
      "sourceType": "official-vendor-taxonomy-page",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "3D NAND hole, trench, contact, capacitor-cell, directionality, and selectivity taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no product claim, specification, recipe, condition, image, ranking, result, or wording copied"
    },
    {
      "id": "tel-etch-requirements-2025",
      "label": "Requirements and Various Etch Technologies",
      "publisher": "Tokyo Electron",
      "url": "https://www.tel.com/ir/policy/mplan/i9nanv00000000ga-att/20250226_TELIRDay_E_rev.1_slide_r3.pdf",
      "sourceType": "official-vendor-investor-presentation",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "DRAM capacitor, contact, and 3D NAND channel-hole application taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no slide text, layer count, dimension, product claim, chart, image, process, or value copied"
    },
    {
      "id": "applied-etch-overview",
      "label": "Applied Materials Etch Process Overview",
      "publisher": "Applied Materials",
      "url": "https://www.appliedmaterials.com/us/en/semiconductor/products/processes/etch.html",
      "sourceType": "official-vendor-process-overview",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "Etch process, masking, and 3D NAND application taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no product claim, specification, dimension, quote, image, process result, or numeric value copied"
    },
    {
      "id": "oxford-drie-taxonomy",
      "label": "Deep reactive ion etching (DRIE)",
      "publisher": "Oxford Instruments Plasma Technology",
      "url": "https://plasma.oxinst.com/products/dsie/",
      "sourceType": "official-vendor-taxonomy-page",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "Deep-feature, sidewall-passivation, mask, and advanced-packaging taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no product specification, chemistry, condition, process, recipe, image, ranking, result, or wording copied"
    }
  ],
  "claimNodes": [
    {
      "node_id": "har-arde-separation",
      "topic": "Aspect-ratio-dependent etching is a profile-scale effect that must be kept distinct from pattern-density loading and from any single presumed cause.",
      "source_ids": [
        "gottscho-microscopic-uniformity-1992",
        "huard-neutral-transport-2017",
        "iue-aguinsky-reactive-transport"
      ],
      "boundary": "The ARDE burden is an original normalized teaching proxy and is not an etch-rate curve, geometry law, or fitted source result."
    },
    {
      "node_id": "har-neutral-transport-starvation",
      "topic": "Reactive-neutral access to the feature bottom may diverge from incident conditions as feature transport becomes constrained.",
      "source_ids": [
        "huard-neutral-transport-2017",
        "iue-aguinsky-reactive-transport",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "Neutral transport states contain no species identity, density, flux, sticking probability, dimension, conductance, or copied coefficient."
    },
    {
      "node_id": "har-ion-access-directionality",
      "topic": "Ion angular access and local trajectory changes must be represented separately from neutral transport and surface protection.",
      "source_ids": [
        "gottscho-microscopic-uniformity-1992",
        "arnold-sawin-feature-charging-1991",
        "viennaps-documentation"
      ],
      "boundary": "Ion-bottom access and directionality bands contain no angular distribution, energy, current, sheath solution, ray trace, or source geometry."
    },
    {
      "node_id": "har-charging-deflection",
      "topic": "Feature and mask charging can alter local ion trajectories and profile evolution.",
      "source_ids": [
        "arnold-sawin-feature-charging-1991",
        "vyvoda-hardmask-charging-1999",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "The charging-deflection proxy is not voltage, charge density, electric field, trajectory simulation, or predictive charging model."
    },
    {
      "node_id": "har-sidewall-protection-bowing",
      "topic": "Sidewall protection, ion access, lateral removal, and feature burden jointly affect bowing tendency.",
      "source_ids": [
        "donnelly-kornblit-2013",
        "kim-contact-distortion-2015",
        "oxford-drie-taxonomy"
      ],
      "boundary": "Protection and bowing are ordinal proxies without film identity, coverage, thickness, deposition rate, sidewall angle, or profile coordinate."
    },
    {
      "node_id": "har-mask-retention",
      "topic": "Mask survival must be tracked independently from target removal and bottom opening.",
      "source_ids": [
        "kim-contact-distortion-2015",
        "nist-cryo-har-gratings-2016",
        "lam-vantex-taxonomy"
      ],
      "boundary": "Mask-loss and retention proxies are not selectivity, mask thickness, erosion rate, qualified mask choice, or process recommendation."
    },
    {
      "node_id": "har-twisting-distortion",
      "topic": "Twisting, tilting, and cross-sectional distortion require profile evidence beyond a single bottom-opening metric.",
      "source_ids": [
        "kim-contact-distortion-2015",
        "arnold-sawin-feature-charging-1991",
        "lam-vantex-taxonomy"
      ],
      "boundary": "The twisting proxy does not reproduce a contact ellipticity, displacement, tilt angle, image-derived metric, or device-yield correlation."
    },
    {
      "node_id": "har-notching",
      "topic": "Localized trajectory deflection and newly exposed interfaces can create notch-like profile risk that requires dedicated evidence.",
      "source_ids": [
        "arnold-sawin-feature-charging-1991",
        "vyvoda-hardmask-charging-1999",
        "donnelly-kornblit-2013"
      ],
      "boundary": "The notching burden is a review flag, not a notch dimension, interface model, etch-stop response, or process diagnosis."
    },
    {
      "node_id": "har-microtrenching",
      "topic": "Sidewall interaction, ion access, and charging can contribute to localized bottom-edge removal distinct from global bowing.",
      "source_ids": [
        "westerheim-contact-bias-1995",
        "vyvoda-hardmask-charging-1999",
        "viennaps-documentation"
      ],
      "boundary": "The microtrenching burden contains no reflected-ion distribution, material yield, trench depth, bias condition, or copied simulation."
    },
    {
      "node_id": "har-dram-capacitor-context",
      "topic": "DRAM capacitor-cell etch is a distinct high-aspect-ratio application context with profile, mask, and integration constraints.",
      "source_ids": [
        "lam-vantex-taxonomy",
        "tel-etch-requirements-2025",
        "donnelly-kornblit-2013"
      ],
      "boundary": "DRAM-capacitor-like is an application label only; it names no customer stack, node, dimension, chemistry, tool, or qualified process."
    },
    {
      "node_id": "har-nand-channel-context",
      "topic": "Three-dimensional NAND channel-hole etch requires deep-feature directionality and profile control.",
      "source_ids": [
        "lam-vantex-taxonomy",
        "tel-etch-requirements-2025",
        "applied-etch-overview"
      ],
      "boundary": "NAND-channel-like contains no layer count, dimension, vendor performance, product comparison, recipe, or production claim."
    },
    {
      "node_id": "har-contact-context",
      "topic": "Contact etch requires separate tracking of bottom opening, distortion, sidewall state, and mask retention.",
      "source_ids": [
        "kim-contact-distortion-2015",
        "westerheim-contact-bias-1995",
        "lam-vantex-taxonomy"
      ],
      "boundary": "Contact-like contains no contact dimension, stack, stop layer, profile target, electrical result, or process window."
    },
    {
      "node_id": "har-tsv-context",
      "topic": "TSV etch is a distinct packaging and three-dimensional-integration context requiring profile and metrology evidence.",
      "source_ids": [
        "nist-metrology-3d-integration",
        "jeong-tsv-profile-2026",
        "oxford-drie-taxonomy"
      ],
      "boundary": "TSV-like contains no via dimension, depth, uniformity, DRIE cycle, scallop metric, liner requirement, or packaging qualification."
    },
    {
      "node_id": "har-metrology-replacement-evidence",
      "topic": "Profile, bottom-open, mask, distortion, and uniformity claims require owned metrology, uncertainty, traceability, and accountable review.",
      "source_ids": [
        "nist-plasma-process-metrology",
        "nist-metrology-3d-integration",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "No generated row is measured, calibrated, qualified, or suitable for wafer disposition or endpoint action."
    },
    {
      "node_id": "har-model-validation-open-reproduction",
      "topic": "Feature-scale reproduction requires pinned software, license, dependencies, geometry, parameters, determinism posture, and independent measurement comparison.",
      "source_ids": [
        "viennaps-documentation",
        "viennaps-process-interface",
        "viennaps-repository",
        "huard-neutral-transport-2017"
      ],
      "boundary": "ViennaPS remains link-only; no GPL code, default, example, geometry, parameter, solver output, or named-tool accuracy claim enters this packet."
    },
    {
      "node_id": "har-categorical-bridge",
      "topic": "RIE and particle-transport context may enter HAR only as categorical teaching metadata, while downstream metrology handoff remains replacement-evidence gated.",
      "source_ids": [
        "doe-fes-plasma-semiconductor-2023",
        "nist-plasma-process-metrology",
        "huard-neutral-transport-2017",
        "viennaps-documentation"
      ],
      "boundary": "No bridge imports physical state, geometry, recipe, equipment action, endpoint decision, wafer disposition, qualification, or signoff."
    }
  ],
  "hardBoundary": "No source body, figure, table, equation, coefficient, geometry, gas identity, material recipe, operating value, dimension, layer count, measurement trace, vendor result, source code, named-tool output, or publication-derived numeric value enters the generated SemiAgora packet.",
  "numericUse": "none",
  "artifactUse": "No source body, equation, coefficient, code, geometry, recipe, dimension, measurement, profile, parameter, or output is embedded."
}