{
  "schema": "semiagora.litho-scanner-track-source-spine.v1",
  "version": "2026-08-30-litho-scanner-track-v1",
  "experimentId": "SA-PROC-LITHO-SCANNER-TRACK-024",
  "generatedAt": "2026-08-29T00:00:00+09:00",
  "sourceBodiesStored": false,
  "sourceNumericUse": "none",
  "rightsMode": "link-only",
  "sourceCount": 20,
  "claimNodeCount": 16,
  "inputHashesSha256": {
    "litho-scanner-track-state-contract-v1.json": "93A86D46F96D1766A385AEC09968D2CD07382F2207327736103B65678EB1DE41",
    "litho-scanner-track-metric-contract-v1.json": "DD914086E639AEDCC4727CAAF5FF8F20155F16A87A1A7DB775FF12DBDBF0A715",
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    "independent-verifier-contract-v1.json": "12D6EF269FF8B8479479821F43E3B9C005D7233AA1A293BC593F6759EA84AEDD"
  },
  "sources": [
    {
      "id": "asml-lenses-mirrors",
      "label": "Lenses and mirrors - Lithography principles",
      "publisher": "ASML",
      "url": "https://www.asml.com/en/technology/lithography-principles/lenses-and-mirrors",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "DUV lens, EUV mirror, numerical-aperture, focus, and imaging vocabulary categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "asml-measuring-accuracy",
      "label": "Measuring accuracy - Lithography principles",
      "publisher": "ASML",
      "url": "https://www.asml.com/en/technology/lithography-principles/measuring-accuracy",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "Focus, overlay, optical metrology, e-beam inspection, and feedback-loop vocabulary categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "asml-duv-systems",
      "label": "DUV lithography systems",
      "publisher": "ASML",
      "url": "https://www.asml.com/en/products/duv-lithography-systems",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "Dry and immersion DUV scanner-family and imaging-control categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "asml-euv-systems",
      "label": "EUV lithography systems",
      "publisher": "ASML",
      "url": "https://www.asml.com/en/products/euv-lithography-systems",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "EUV scanner-family, reflective-optics, vacuum, stage, and patterning categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "tel-lithius-track",
      "label": "Coater/Developer LITHIUS Series",
      "publisher": "Tokyo Electron",
      "url": "https://www.tel.com/product/lithius.html",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "Coater/developer track, integrated metrology, defect-control, and scanner-inline chain categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "tel-act-track",
      "label": "Coater/Developer ACT Series",
      "publisher": "Tokyo Electron",
      "url": "https://www.tel.com/product/act.html",
      "sourceType": "official-technical-page-record",
      "rightsStatus": "link-only; publisher notices and terms apply",
      "numericUse": "none",
      "use": "Coater/developer, wafer-transfer, and scanner-inline track categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "dill-positive-photoresist",
      "label": "Characterization of positive photoresist",
      "publisher": "IEEE",
      "url": "https://doi.org/10.1109/T-ED.1975.18159",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Photoresist exposure and development characterization categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "mack-probabilistic-window",
      "label": "Probabilistic process window: a new approach to focus-exposure analysis",
      "publisher": "SPIE",
      "url": "https://doi.org/10.1117/1.JMM.22.2.021007",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Focus-exposure process-window and measurement-uncertainty categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "chang-photoresist-coating",
      "label": "Experimental analysis and optimization of a photo resist coating process for photolithography in wafer fabrication",
      "publisher": "Elsevier",
      "url": "https://doi.org/10.1016/j.mejo.2005.10.006",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Photoresist coating-thickness and uniformity evidence categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "petrillo-photoacid-diffusion",
      "label": "Characterization of the Photoacid Diffusion Length and Reaction Kinetics in EUV Photoresists with IR Spectroscopy",
      "publisher": "American Chemical Society",
      "url": "https://doi.org/10.1021/ma902548a",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Post-exposure-bake reaction-diffusion and photoacid evidence categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "li-peb-reaction-diffusion",
      "label": "Simulation of the Postexposure Bake Process of Chemically Amplified Resists by Reaction-Diffusion Equations",
      "publisher": "Elsevier",
      "url": "https://doi.org/10.1006/jcph.2001.6881",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Post-exposure-bake reaction-diffusion model categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "dammel-development-model",
      "label": "Theoretical Basis For A New Development Rate Model For Positive Photoresists",
      "publisher": "Technical Association of Photopolymers, Japan",
      "url": "https://doi.org/10.2494/photopolymer.10.379",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Positive-photoresist development-rate model categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "mack-notch-dissolution",
      "label": "Notch Model for Photoresist Dissolution",
      "publisher": "The Electrochemical Society",
      "url": "https://doi.org/10.1149/1.1390645",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Photoresist dissolution and development model categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "mack-stochastic-exposure",
      "label": "Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study",
      "publisher": "SPIE",
      "url": "https://doi.org/10.1117/1.3631753",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "EUV stochastic exposure and resist-response categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "de-bisschop-stochastic-effects",
      "label": "Stochastic effects in EUV lithography: random, local CD-variability and printing failures",
      "publisher": "SPIE",
      "url": "https://doi.org/10.1117/1.JMM.16.4.041013",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "EUV local variability and stochastic printing-failure categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "hinsberg-counting-statistics",
      "label": "Contribution of EUV resist counting statistics to stochastic printing failures",
      "publisher": "SPIE",
      "url": "https://doi.org/10.1117/1.JMM.20.1.014603",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Resist counting-statistics and stochastic printing-failure categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "mack-stochastic-development",
      "label": "Stochastic approach to modeling photoresist development",
      "publisher": "AIP Publishing",
      "url": "https://doi.org/10.1116/1.3117346",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Stochastic dissolution and development-path categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "itani-photoacid-duv",
      "label": "Photoacid Diffusion in Chemically Amplified DUV Resists",
      "publisher": "American Chemical Society",
      "url": "https://doi.org/10.1021/bk-1998-0706.ch009",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Chemically amplified DUV resist and photoacid-diffusion categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "robertson-universal-dissolution",
      "label": "Toward a universal resist dissolution model for lithography simulation",
      "publisher": "SPIE",
      "url": "https://doi.org/10.1117/12.425197",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Cross-resist dissolution-model and calibration categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    },
    {
      "id": "constantoudis-stochastic-dissolution",
      "label": "Stochastic simulation of thin photoresist film dissolution: a dynamic and a quasi-static dissolution algorithm for the simulation of surface and line-edge roughness formation",
      "publisher": "Elsevier",
      "url": "https://doi.org/10.1016/j.polymer.2005.01.049",
      "sourceType": "peer-reviewed-article-record",
      "rightsStatus": "link-only; DOI resolver and publisher notices apply",
      "numericUse": "none",
      "use": "Stochastic dissolution, surface roughness, and line-edge-roughness categories.",
      "artifactUse": "bibliographic metadata only; no body text, abstract wording, equation, coefficient, chemistry, condition, geometry, method detail, result, figure, table, value, code, or model output copied"
    }
  ],
  "claims": [
    {
      "node_id": "LITHO-C01",
      "claim": "Scanner and coater/developer track evidence must be represented as a connected chain rather than exposure alone.",
      "source_ids": [
        "asml-duv-systems",
        "asml-euv-systems",
        "tel-lithius-track"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C02",
      "claim": "DUV dry, DUV immersion, and EUV scanner families remain separate categorical vocabularies.",
      "source_ids": [
        "asml-lenses-mirrors",
        "asml-duv-systems",
        "asml-euv-systems"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C03",
      "claim": "Focus and dose belong to a joint process-window evidence category without becoming transferable settings.",
      "source_ids": [
        "mack-probabilistic-window",
        "asml-measuring-accuracy"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C04",
      "claim": "Overlay and focus require measurement and feedback evidence rather than scanner labels alone.",
      "source_ids": [
        "asml-measuring-accuracy",
        "asml-lenses-mirrors",
        "mack-probabilistic-window"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C05",
      "claim": "Coating thickness and uniformity require owned track and wafer evidence.",
      "source_ids": [
        "tel-lithius-track",
        "tel-act-track",
        "chang-photoresist-coating"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C06",
      "claim": "Resist coating and interface state cannot be inferred from exposure-family metadata.",
      "source_ids": [
        "tel-lithius-track",
        "dill-positive-photoresist",
        "chang-photoresist-coating"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C07",
      "claim": "Post-exposure bake reaction-diffusion is a distinct evidence stage after exposure.",
      "source_ids": [
        "petrillo-photoacid-diffusion",
        "li-peb-reaction-diffusion",
        "itani-photoacid-duv"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C08",
      "claim": "Development and dissolution are separate from exposure and bake and require their own calibrated evidence.",
      "source_ids": [
        "dammel-development-model",
        "mack-notch-dissolution",
        "robertson-universal-dissolution"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C09",
      "claim": "Pattern-transfer readiness requires measured resist-profile and development evidence.",
      "source_ids": [
        "dill-positive-photoresist",
        "li-peb-reaction-diffusion",
        "robertson-universal-dissolution"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C10",
      "claim": "EUV stochastic exposure and local printing failures require explicit burden categories.",
      "source_ids": [
        "mack-stochastic-exposure",
        "de-bisschop-stochastic-effects",
        "hinsberg-counting-statistics"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C11",
      "claim": "Stochastic development and dissolution can contribute distinct roughness and escape categories.",
      "source_ids": [
        "mack-stochastic-development",
        "constantoudis-stochastic-dissolution",
        "hinsberg-counting-statistics"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C12",
      "claim": "DUV and EUV literature categories do not authorize cross-family numeric transfer.",
      "source_ids": [
        "asml-duv-systems",
        "asml-euv-systems",
        "mack-stochastic-exposure"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C13",
      "claim": "Field, edge, within-wafer, and measurement-sampling labels remain categorical until replaced by owned metrology.",
      "source_ids": [
        "asml-measuring-accuracy",
        "chang-photoresist-coating"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C14",
      "claim": "Etch handoff requires owned mask, pattern, profile, and downstream RIE evidence.",
      "source_ids": [
        "dill-positive-photoresist",
        "dammel-development-model",
        "mack-notch-dissolution"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C15",
      "claim": "Every normalized proxy and threshold in this packet is an original teaching choice rather than a fit to a cited source.",
      "source_ids": [
        "mack-probabilistic-window",
        "petrillo-photoacid-diffusion",
        "de-bisschop-stochastic-effects",
        "robertson-universal-dissolution"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    },
    {
      "node_id": "LITHO-C16",
      "claim": "No source category authorizes a resist recipe, scanner or track action, process qualification, wafer disposition, or production use.",
      "source_ids": [
        "asml-lenses-mirrors",
        "asml-measuring-accuracy",
        "asml-duv-systems",
        "asml-euv-systems",
        "tel-lithius-track",
        "tel-act-track",
        "dill-positive-photoresist",
        "mack-probabilistic-window",
        "chang-photoresist-coating",
        "petrillo-photoacid-diffusion",
        "li-peb-reaction-diffusion",
        "dammel-development-model",
        "mack-notch-dissolution",
        "mack-stochastic-exposure",
        "de-bisschop-stochastic-effects",
        "hinsberg-counting-statistics",
        "mack-stochastic-development",
        "itani-photoacid-duv",
        "robertson-universal-dissolution",
        "constantoudis-stochastic-dissolution"
      ],
      "boundary": "Category-level provenance only; no source wording, numeric value, chemistry, condition, geometry, method, result, equation, code, or model output is imported."
    }
  ],
  "hardBoundary": "No source body, abstract wording, numeric value, equation, coefficient, chemistry, setting, geometry, method detail, result, figure, table, code, model output, or named-tool output is stored or used. Links and bibliographic metadata provide category-level provenance only."
}