# Monolithic-3D Si/oxide-semiconductor SRAM integration evidence ladder

## Scope

This v103 packet exposes how declared device-tier, transport, contact, inter-tier, thermal, extraction, cell, and subarray assumptions can disagree before a research claim is written.

## Execution

- 6144 deterministic rows from the complete 4 x 4 x 4 x 4 x 3 x 2 x 2 x 2 Cartesian product.
- Browser-side filtering of a saved CSV only.
- Original dimensionless equations and coefficients only.
- Zero TCAD, SPICE, PEX, compact-model fitting, layout, measurement, or live server runs.

## Interpretation

Access drive, contact transfer, connectivity, thermal compatibility, extraction confidence, read/write stability, delay, energy, standby burden, footprint, and readiness are relative sensitivity scores. They have no physical units and cannot be cited as a device, cell, subarray, process, PPA, yield, or readiness result.

## Contradictions and gates

Each row checks whether tier assignment, inter-tier connection, contact burden, transport class, loading, thermal window, extraction maturity, and evidence posture are mutually coherent. A contradiction routes the row to reconciliation before any metric is interpreted. Otherwise the decision gate names the next owned evidence packet required.

## Replacement evidence

A real claim needs owned topology and condition cards, oxide/silicon device and compact-model lineage, contact and interface evidence, cross-tier connectivity, thermal/process compatibility, layout and PEX provenance, cell/subarray read-write evidence, variation, uncertainty, measurement comparison, and accountable review.

## Rights

The source spine retains links, metadata, abstract-level scope, official program descriptions, and original synthesis only. Follow each rights holder's current terms before using a linked publication or resource.