{
  "schema": "semiagora.m3d-igo-sram-source-spine.v1",
  "version": "2026-08-27-v103",
  "experimentId": "SA-MEM-M3D-IGO-SRAM-004",
  "generatedDate": "2026-08-27",
  "reviewMode": "Public metadata, abstract-level scope, official program descriptions, links, and original synthesis only.",
  "rightsBoundary": "No publication body, figure, table, equation, topology, layout, dimension, process stack, device parameter, extracted parasitic, measured value, reported percentage, node claim, code, model, PDK, or result is mirrored or used numerically.",
  "claimMap": [
    {
      "nodeId": "kn-fm-023",
      "topic": "Oxide-semiconductor interfaces",
      "sourceIds": [
        "src-advscience-igzo-device-circuit-2025",
        "src-imec-igzo-dram",
        "src-nist-emerging-integrated-systems"
      ],
      "boundary": "Vocabulary and evidence requirements only; no interface state, material parameter, or device value is generated."
    },
    {
      "nodeId": "kn-fi-055",
      "topic": "Thermal budget and diffusion coupling",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-ieee-m3d-sram-tft-2025",
        "src-imec-logic-roadmap"
      ],
      "boundary": "No temperature, time, sequence, diffusion coefficient, or process compatibility result is copied or predicted."
    },
    {
      "nodeId": "kn-fi-061",
      "topic": "Contact formation and specific resistance",
      "sourceIds": [
        "src-ieee-hybrid-igzo-si-sram-2024",
        "src-advscience-igzo-device-circuit-2025",
        "src-nist-irds-metrology-2024"
      ],
      "boundary": "No contact geometry, material, resistance, extraction, or process recipe is included."
    },
    {
      "nodeId": "kn-fi-062",
      "topic": "Local and inter-tier interconnect",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-ieee-m3d-sram-beol-2023",
        "src-nist-emerging-integrated-systems"
      ],
      "boundary": "No via, monolithic inter-tier connection, routing geometry, capacitance, or extracted netlist is included."
    },
    {
      "nodeId": "kn-cs-121",
      "topic": "6T SRAM cell operation",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-ieee-m3d-sram-beol-2023",
        "src-ieee-hybrid-igzo-si-sram-2024"
      ],
      "boundary": "The source scope anchors an evidence chain only; no topology, schematic, sizing, netlist, or cell result is copied."
    },
    {
      "nodeId": "kn-cs-122",
      "topic": "Read stability and SNM",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-bsim-models",
        "src-nist-tn1297"
      ],
      "boundary": "The read-stability score is not SNM, a voltage, a probability, or a silicon prediction."
    },
    {
      "nodeId": "kn-cs-123",
      "topic": "Write margin and assist",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-bsim-models",
        "src-nist-tn1297"
      ],
      "boundary": "The write-stability score is not write margin, assist guidance, a voltage, or a circuit result."
    },
    {
      "nodeId": "kn-cs-124",
      "topic": "Bitlines, wordlines and column mux",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-ieee-m3d-sram-tft-2025",
        "src-nist-emerging-integrated-systems"
      ],
      "boundary": "No subarray size, WL/BL geometry, capacitance, delay, energy, or periphery design is copied or predicted."
    },
    {
      "nodeId": "kn-dvf-172",
      "topic": "RC parasitic extraction",
      "sourceIds": [
        "src-arxiv-m3d-igo-sram-2608-22741",
        "src-nist-irds-metrology-2024",
        "src-imec-logic-roadmap"
      ],
      "boundary": "Extraction maturity is a declared evidence state; no PEX, rule deck, corner, netlist, or signoff output exists."
    }
  ],
  "sources": [
    {
      "id": "src-arxiv-m3d-igo-sram-2608-22741",
      "label": "arXiv: process-aware hybrid Si/IGO monolithic-3D SRAM preprint record",
      "organization": "arXiv / research authors",
      "url": "https://arxiv.org/abs/2608.22741",
      "sourceClass": "primary-preprint-metadata",
      "rights": "Public metadata, abstract-level scope, version history, and link only; no paper body, topology, layout, dimension, equation, TCAD, extraction, result, percentage, or node claim is copied.",
      "note": "Scope anchor for the device-tier, integration, cell, and subarray evidence chain; it supplies zero numeric model inputs."
    },
    {
      "id": "src-ieee-m3d-sram-beol-2023",
      "label": "IEEE: monolithic-3D SRAM with BEOL-compatible transistors",
      "organization": "IEEE / research authors",
      "url": "https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134152",
      "sourceClass": "primary-conference-metadata",
      "rights": "DOI metadata and abstract-level scope only; no controlled body, figure, table, circuit detail, value, or conclusion is mirrored.",
      "note": "BEOL-compatible transistor and SRAM integration vocabulary anchor without importing a design or result."
    },
    {
      "id": "src-ieee-hybrid-igzo-si-sram-2024",
      "label": "IEEE: hybrid IGZO/Si SRAM monolithic-3D demonstration record",
      "organization": "IEEE / research authors",
      "url": "https://doi.org/10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631551",
      "sourceClass": "primary-conference-metadata",
      "rights": "DOI metadata and abstract-level scope only; no device stack, process condition, topology, curve, value, figure, table, or comparison is copied.",
      "note": "Hybrid oxide-semiconductor/silicon integration evidence anchor with all reported values excluded."
    },
    {
      "id": "src-ieee-m3d-sram-tft-2025",
      "label": "IEEE: monolithic-3D SRAMs using thin-film transistors",
      "organization": "IEEE / research authors",
      "url": "https://doi.org/10.1109/IEDM50572.2025.11353709",
      "sourceClass": "primary-conference-metadata",
      "rights": "DOI metadata and abstract-level opportunity/challenge scope only; no body, figure, table, dimension, value, roadmap claim, or ranking is copied.",
      "note": "Evidence-maturity and integration-challenge vocabulary anchor."
    },
    {
      "id": "src-advscience-igzo-device-circuit-2025",
      "label": "Advanced Science / PMC: IGZO device-to-circuit co-design record",
      "organization": "Research authors / PubMed Central",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC12866809/",
      "sourceClass": "open-primary-journal-link",
      "rights": "Open article link, metadata, and original synthesis only; no article text, figure, table, equation, process condition, device parameter, circuit result, or performance value is copied.",
      "note": "Device-to-circuit handoff vocabulary anchor; no coefficient is calibrated from the article."
    },
    {
      "id": "src-imec-igzo-dram",
      "label": "imec: capacitor-less IGZO DRAM research summary",
      "organization": "imec",
      "url": "https://www.imec-int.com/en/press/imec-demonstrates-capacitor-less-igzo-based-dram-cell-400s-retention-time",
      "sourceClass": "rights-holder-research-summary",
      "rights": "Rights-holder link and original synthesis only; no image, reported retention value, process detail, device curve, product claim, or DRAM-to-SRAM transfer is copied.",
      "note": "Oxide-semiconductor memory and integration vocabulary anchor; DRAM results are not treated as SRAM evidence."
    },
    {
      "id": "src-nist-emerging-integrated-systems",
      "label": "NIST: metrology for emerging integrated systems",
      "organization": "NIST",
      "url": "https://www.nist.gov/programs-projects/metrology-emerging-integrated-systems",
      "sourceClass": "government-metrology-program",
      "rights": "Official program link and original synthesis only; no procedure, requirement, controlled content, or program-compliance claim is copied.",
      "note": "Structure, interface, integration, and measurement-evidence vocabulary anchor."
    },
    {
      "id": "src-nist-irds-metrology-2024",
      "label": "NIST / IRDS: 2024 Metrology chapter record",
      "organization": "NIST / IRDS",
      "url": "https://www.nist.gov/publications/international-roadmap-devices-and-systems-tm-2024-metrology",
      "sourceClass": "government-roadmap-metadata",
      "rights": "Official metadata and link only; no roadmap body, table, target, figure, requirement, or value is mirrored.",
      "note": "Measurement readiness, structure-function linkage, and uncertainty vocabulary anchor."
    },
    {
      "id": "src-imec-logic-roadmap",
      "label": "imec: logic technology roadmap",
      "organization": "imec",
      "url": "https://www.imec-int.com/en/articles/view-logic-technology-roadmap",
      "sourceClass": "rights-holder-roadmap-summary",
      "rights": "Rights-holder link and original synthesis only; no roadmap figure, node target, process detail, PPA value, or foundry comparison is copied.",
      "note": "Staged integration and evidence-maturity vocabulary anchor without a node claim."
    },
    {
      "id": "src-bsim-models",
      "label": "UC Berkeley: BSIM model index",
      "organization": "UC Berkeley BSIM Group",
      "url": "https://www.bsim.berkeley.edu/models/",
      "sourceClass": "official-model-documentation-index",
      "rights": "Official model-index link and original synthesis only; no model file, parameter, calibrated card, PDK, or oxide-semiconductor model claim is copied.",
      "note": "Compact-model lineage and model-boundary vocabulary anchor; no oxide-semiconductor model, parameter set, calibrated card, or device prediction is supplied."
    },
    {
      "id": "src-nist-tn1297",
      "label": "NIST Technical Note 1297: measurement uncertainty",
      "organization": "NIST",
      "url": "https://www.nist.gov/pml/nist-technical-note-1297",
      "sourceClass": "government-metrology-guidance",
      "rights": "Official guidance link and original synthesis only; no controlled guidance text is mirrored or treated as a completed formal uncertainty budget.",
      "note": "Measurand, uncertainty, and reporting-lineage vocabulary anchor; no formal uncertainty budget is claimed."
    }
  ],
  "exclusion": "All source-reported numeric results and all source-specific implementations remain outside the generated model."
}