{
  "schema": "semiagora.plasma-ccp-icp-source-spine.v1",
  "version": "2026-08-27-v107",
  "experimentId": "SA-EQP-PLASMA-CCP-ICP-008",
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  "sources": [
    {
      "id": "nist-gec-ccp-reference-cell",
      "label": "The Gaseous Electronics Conference Radio-frequency Reference Cell",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/gaseous-electronics-conference-radio-frequency-reference-cell-defined-parallel-plate",
      "sourceType": "primary-government-journal-record",
      "rightsStatus": "link-only; NIST publication metadata and downloadable paper have separate rights notices",
      "use": "Defined parallel-plate RF reference-cell and reproducible experimental/model-comparison vocabulary for the bounded CCP archetype.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "nist-gec-icp-source",
      "label": "An Inductively Coupled Plasma Source for the GEC RF Reference Cell",
      "publisher": "Journal of Research of NIST / Sandia and collaborators",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC4887237/",
      "sourceType": "primary-open-government-journal-article",
      "rightsStatus": "link-only; U.S. government journal article with third-party illustration caveats",
      "use": "Inductive-source architecture, diagnostic access, radial-density behavior, mode-transition, and chamber-wall-sensitivity scope.",
      "numericUse": "none",
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    },
    {
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      "label": "Kinetic-Energy Distributions of Ions in a Parallel-Plate RF Reference Cell",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/kinetic-energy-distributions-ions-sampled-argon-plasmas-parallel-plate-radio-frequency",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only",
      "use": "CCP sheath, ion-energy-distribution, pressure-dependence, and collisionality vocabulary.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "nist-icp-ion-energy",
      "label": "Ion Energy Distributions in Inductively Coupled RF Discharges",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/ion-energy-distributions-inductively-coupled-radio-frequency-discharges-argon-nitrogen",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only",
      "use": "Measured ICP ion-energy, ion-species, and wafer-facing ion-current-density ownership vocabulary.",
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    },
    {
      "id": "nist-biased-icp-ied-model",
      "label": "Measurements and Modeling of IEDs in RF-Biased High-Density Discharges",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/measurements-and-modeling-ion-energy-distributions-high-density-radio-frequency-biased",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only",
      "use": "Inductive-source versus substrate-bias channels, time-dependent sheath dynamics, diagnostics, and measured-model validation scope.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "nist-icp-uniformity-tomography",
      "label": "Optical CAT Measurements of Plasma Uniformity in an ICP Discharge",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/optical-computer-aided-tomography-measurements-plasma-uniformity-inductively-coupled-0",
      "sourceType": "primary-government-conference-record",
      "rightsStatus": "link-only",
      "use": "Spatial nonuniformity, asymmetry, limited diagnostic access, and measurement-inversion ownership scope.",
      "numericUse": "none",
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    },
    {
      "id": "aps-icp-coil-uniformity",
      "label": "Influence of Coil Geometry on Planar ICP Density Distribution",
      "publisher": "American Physical Society / NIST authors",
      "url": "https://journals.aps.org/pre/abstract/10.1103/PhysRevE.56.5866",
      "sourceType": "primary-peer-reviewed-publication-metadata",
      "rightsStatus": "link-only; publisher access restrictions may apply",
      "use": "Coil and power configuration, radial electron-density distribution, and diffusion-dominated wafer-region scope.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "turner-ccp-simulation-benchmark",
      "label": "Simulation Benchmarks for Low-Pressure Plasmas: Capacitive Discharges",
      "publisher": "Dublin City University repository / Physics of Plasmas",
      "url": "https://doras.dcu.ie/17735/",
      "sourceType": "primary-peer-reviewed-repository-record",
      "rightsStatus": "link-only; repository record declares CC BY-NC-SA 3.0 for the deposited item",
      "use": "Independent-code benchmarking, uncertainty, prescribed-case, and implementation-agreement vocabulary.",
      "numericUse": "none",
      "artifactUse": "no paper body, benchmark parameter, equation, collision data, code, or output copied"
    },
    {
      "id": "berkeley-high-density-source-design",
      "label": "Design of High Density Plasma Sources for Materials Processing",
      "publisher": "Academic Press / Elsevier",
      "url": "https://doi.org/10.1016/B978-0-08-092513-4.50006-4",
      "sourceType": "primary-publisher-book-chapter-record",
      "rightsStatus": "link-only; commercial publisher rights apply",
      "use": "Bulk/sheath, high-density-source, ion-transport, uniformity, and materials-processing architecture vocabulary.",
      "numericUse": "none",
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    },
    {
      "id": "berkeley-global-model-high-density",
      "label": "Global Model of Ar, O2, Cl2, and Ar/O2 High-Density Plasma Discharges",
      "publisher": "UC Berkeley Library / EECS",
      "url": "https://digicoll.lib.berkeley.edu/record/134386",
      "sourceType": "primary-university-technical-report-record",
      "rightsStatus": "link-only; UC Berkeley digital-collection use notice applies",
      "use": "Volume-averaged particle/energy-balance vocabulary and the spatial-resolution limits of global models.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "iupac-plasma-wall-recombination",
      "label": "Experimental and Modeling Study of O and Cl Atom Surface Recombination",
      "publisher": "IUPAC Pure and Applied Chemistry",
      "url": "https://publications.iupac.org/pac/82/6/1301/index.html",
      "sourceType": "peer-reviewed-primary-and-review-source",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Plasma-wall interaction, wall recombination, chamber-surface state, and model-input ownership scope.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "nist-plasma-process-metrology",
      "label": "Plasma Process Metrology",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/programs-projects/plasma-process-metrology",
      "sourceType": "official-government-program-overview",
      "rightsStatus": "link-only",
      "use": "Diagnostic, measured-data, model-validation, process-control, and replacement-evidence ownership boundary.",
      "numericUse": "none",
      "artifactUse": "none"
    },
    {
      "id": "oxford-icp-source-bias-taxonomy",
      "label": "Inductively Coupled Plasma Reactive Ion Etching",
      "publisher": "Oxford Instruments Plasma Technology",
      "url": "https://plasma.oxinst.com/products/icp-etching/",
      "sourceType": "official-commercial-product-taxonomy",
      "rightsStatus": "link-only commercial terminology",
      "use": "Separate inductive-source and substrate-bias architecture vocabulary only.",
      "numericUse": "none",
      "artifactUse": "no product specification, process result, image, recipe, performance claim, or ranking copied"
    },
    {
      "id": "lam-ccp-icp-etch-taxonomy",
      "label": "Etch Essentials: The Building Blocks of AI Era Microchips",
      "publisher": "Lam Research",
      "url": "https://newsroom.lamresearch.com/etch-essentials-semiconductor-manufacturing?web=1",
      "sourceType": "official-commercial-taxonomy",
      "rightsStatus": "link-only commercial terminology",
      "use": "CCP, ICP, dry-etch, ion/neutral, and application-segmentation terminology only.",
      "numericUse": "none",
      "artifactUse": "no product data, recipe, result, image, model, performance claim, or ranking copied"
    }
  ],
  "claimNodes": [
    {
      "node_id": "plasma-reference-architectures",
      "topic": "A defined parallel-electrode RF cell and a coil-coupled modification provide bounded CCP and ICP reference vocabularies.",
      "source_ids": [
        "nist-gec-ccp-reference-cell",
        "nist-gec-icp-source",
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      ],
      "boundary": "The packet models teaching archetypes, not every CCP or ICP architecture and not any commercial chamber."
    },
    {
      "node_id": "plasma-source-bias-coupling",
      "topic": "Source sustainment, substrate bias, and wafer-facing sheath response are distinct but coupled evidence channels.",
      "source_ids": [
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        "nist-biased-icp-ied-model",
        "berkeley-high-density-source-design",
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      ],
      "boundary": "Separate controls do not imply perfect physical decoupling; all SemiAgora outputs remain normalized proxies."
    },
    {
      "node_id": "plasma-bulk-sheath-iedf",
      "topic": "Bulk-plasma state, sheath dynamics, ion flux, and ion-energy distributions require separate ownership and validation.",
      "source_ids": [
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        "nist-icp-ion-energy",
        "nist-biased-icp-ied-model",
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      ],
      "boundary": "The packet uses no measured energy, physical voltage, transit time, collision rate, or copied sheath equation."
    },
    {
      "node_id": "plasma-pressure-collisionality",
      "topic": "Pressure regime changes collisionality and therefore the shape and breadth of wafer-facing ion distributions.",
      "source_ids": [
        "nist-ccp-ion-energy",
        "nist-icp-ion-energy",
        "nist-biased-icp-ied-model"
      ],
      "boundary": "The three pressure states are ordinal normalized regimes with no Pa, Torr, mTorr, flow, or mean-free-path value."
    },
    {
      "node_id": "plasma-wall-and-chemistry-loss",
      "topic": "Gas response and chamber-wall state can change charged and neutral species balances and cannot be hidden constants.",
      "source_ids": [
        "nist-gec-icp-source",
        "berkeley-global-model-high-density",
        "iupac-plasma-wall-recombination"
      ],
      "boundary": "No named chemistry, reaction network, sticking/recombination coefficient, chamber-clean state, or wall material is predicted."
    },
    {
      "node_id": "plasma-spatial-uniformity",
      "topic": "Wafer delivery and plasma state can vary spatially with coil, power, diffusion, gas, and chamber conditions.",
      "source_ids": [
        "nist-gec-icp-source",
        "nist-icp-uniformity-tomography",
        "aps-icp-coil-uniformity"
      ],
      "boundary": "Center and edge are only two normalized zones; no radial profile, wafer diameter, uniformity percentage, or chamber geometry is copied."
    },
    {
      "node_id": "plasma-code-benchmark-boundary",
      "topic": "Independent-code benchmark agreement is distinct from experimental validation and production replacement evidence.",
      "source_ids": [
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        "nist-gec-ccp-reference-cell",
        "nist-plasma-process-metrology"
      ],
      "boundary": "SemiAgora will not reproduce, import, or claim equivalence to the published benchmark cases in this packet."
    },
    {
      "node_id": "plasma-feature-scale-handoff",
      "topic": "A chamber-state bridge may supply declared ion/neutral and energy-angle distributions to a separate feature-scale model.",
      "source_ids": [
        "nist-ccp-ion-energy",
        "nist-icp-ion-energy",
        "nist-biased-icp-ied-model"
      ],
      "boundary": "Only normalized bridge fields may connect to SA-PROC-FEATURE-PMC-007; no physical flux or profile prediction is created."
    },
    {
      "node_id": "plasma-vendor-taxonomy",
      "topic": "Commercial pages provide current industry terminology for CCP, ICP, source, bias, and application segmentation.",
      "source_ids": [
        "oxford-icp-source-bias-taxonomy",
        "lam-ccp-icp-etch-taxonomy"
      ],
      "boundary": "No product capability, specification, process result, recipe, recommendation, or supplier comparison is accepted as scientific validation."
    },
    {
      "node_id": "plasma-replacement-evidence",
      "topic": "Physical or operational use requires owned diagnostics, geometry, chemistry, boundary conditions, uncertainty, calibration, and review evidence.",
      "source_ids": [
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        "nist-icp-uniformity-tomography",
        "nist-biased-icp-ied-model"
      ],
      "boundary": "The packet remains mechanism-simulation teaching evidence and cannot upgrade itself to calibration, control, or replacement evidence."
    }
  ],
  "numericTransferFromSources": false,
  "externalArtifactTransfer": false,
  "externalToolOutputTransfer": false
}