{
  "schema": "semiagora.deep-simulation.v1",
  "execution_mode": "precomputed-only",
  "experiment_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
  "slug": "plasma-etch-uq-profile-window",
  "title": "Plasma etch UQ profile window",
  "model_boundary": "normalized response-surface model, no etch recipe",
  "public_boundary": [
    "No live server solver execution.",
    "No process recipe, tool setting, chamber condition, equipment operation, qualification signoff, upload, account, payment, comment, newsletter signup, or submission workflow.",
    "Third-party tools and source pages remain source links unless separately reviewed."
  ],
  "headline_metric": {
    "name": "highest_pass_probability_proxy",
    "value": 0.7728,
    "case": {
      "feature_aspect_ratio": 1,
      "bias_class": "mid",
      "wafer_location": "center"
    }
  },
  "rows": [
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      "selectivity_proxy": 4.0825,
      "cd_bias_nm_proxy": -1.67,
      "pass_probability_proxy": 0.71714,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "bias_class": "low",
      "wafer_location": "center",
      "anisotropy_index": 0.715,
      "selectivity_proxy": 3.7225,
      "cd_bias_nm_proxy": -0.07,
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "cd_bias_nm_proxy": 0.65,
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "cd_bias_nm_proxy": 1.68,
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "anisotropy_index": 0.735,
      "selectivity_proxy": 3.41,
      "cd_bias_nm_proxy": 2.4,
      "pass_probability_proxy": 0.6247,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "cd_bias_nm_proxy": 3.84,
      "pass_probability_proxy": 0.5653,
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    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "wafer_location": "center",
      "anisotropy_index": 0.775,
      "selectivity_proxy": 3.0975,
      "cd_bias_nm_proxy": 3.43,
      "pass_probability_proxy": 0.60569,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "anisotropy_index": 0.765,
      "selectivity_proxy": 3.0975,
      "cd_bias_nm_proxy": 4.15,
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
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      "cd_bias_nm_proxy": 4,
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      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
      "domain": "process",
      "feature_aspect_ratio": 5,
      "bias_class": "mid",
      "wafer_location": "edge",
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      "selectivity_proxy": 3.05,
      "cd_bias_nm_proxy": 5.44,
      "pass_probability_proxy": 0.4469,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
      "domain": "process",
      "feature_aspect_ratio": 5,
      "bias_class": "high",
      "wafer_location": "center",
      "anisotropy_index": 0.705,
      "selectivity_proxy": 2.7375,
      "cd_bias_nm_proxy": 5.03,
      "pass_probability_proxy": 0.48729,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
      "domain": "process",
      "feature_aspect_ratio": 5,
      "bias_class": "high",
      "wafer_location": "mid",
      "anisotropy_index": 0.695,
      "selectivity_proxy": 2.7375,
      "cd_bias_nm_proxy": 5.75,
      "pass_probability_proxy": 0.45759,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    },
    {
      "simulation_id": "SA-PROC-008-PLASMA-ETCH-UQ-001",
      "domain": "process",
      "feature_aspect_ratio": 5,
      "bias_class": "high",
      "wafer_location": "edge",
      "anisotropy_index": 0.675,
      "selectivity_proxy": 2.7375,
      "cd_bias_nm_proxy": 7.19,
      "pass_probability_proxy": 0.39819,
      "teaching_point": "Etch depth, profile, selectivity, and wafer-location variation must be read as a process window, not a recipe."
    }
  ],
  "methods": [
    "Anisotropy increases with bias class and degrades with aspect ratio and location penalty.",
    "Selectivity falls as bias class and aspect ratio rise.",
    "Pass-probability proxy combines anisotropy, selectivity, and CD-bias penalties."
  ],
  "limitations": [
    "No gas chemistry, pressure, RF power, chuck temperature, endpoint, mask stack, tool model, or recipe is represented.",
    "No equipment instruction, fab integration, EHS, or production process claim is made.",
    "Real etch work needs DOE, CD-SEM, profile metrology, selectivity measurement, wafer maps, and process-owner review."
  ],
  "evidence": [
    "v64 deep results store every aspect-ratio, bias, location, anisotropy, selectivity, CD-bias, and pass-probability row.",
    "CSV export preserves the etch UQ response table.",
    "The process domain uses this card as a virtual-fab abstraction, not tool operation."
  ],
  "sources": [
    {
      "label": "DEVSIM",
      "url": "https://github.com/devsim/devsim",
      "note": "Open device/TCAD reference for future solver upgrades; not executed by these process cards."
    },
    {
      "label": "OpenROAD Flow Scripts",
      "url": "https://github.com/The-OpenROAD-Project/OpenROAD-flow-scripts",
      "note": "Open EDA artifact-flow reference for future timing and layout evidence cards."
    }
  ],
  "source_seed_run": "07_assets/factory_lab/experiments/DEEP_SEMICONDUCTOR_V64_2026-08-14/"
}