{
  "schema": "semiagora.process-device-circuit-chain-backlog.v1",
  "version": "2026-08-16-v72",
  "generatedAtKst": "2026-08-16",
  "status": "public_site_v72_promoted_backlog",
  "purpose": "Rights-clean chain candidates for connecting process changes to device metrics, circuit delay, memory margin, yield evidence, and measured replacement slots.",
  "counts": {
    "chainCandidates": 14,
    "promotedBrowserChains": 1,
    "liveServerRuns": 0
  },
  "promoted": {
    "id": "SA-PROC-CHAIN-CONTACT-001",
    "route": "/simulations/contact-resistance-delay-chain-interactive",
    "domainRoute": "/domains/process/chains",
    "rows": 144,
    "csv": "/data/interactive-contact-resistance-delay-chain-v1.csv"
  },
  "chainCandidates": [
    {
      "id": "chain-surface-ald-cap",
      "title": "O2/O3 treatment -> ALD nucleation -> EOT/cap/leakage proxy",
      "domain_handoff": [
        "process",
        "device",
        "circuit"
      ],
      "measured_replacement_slots": [
        "contact angle",
        "incubation cycles",
        "film thickness",
        "C-V leakage"
      ],
      "public_boundary": "No material-specific recipe, gas ratio, or equipment-control instruction."
    },
    {
      "id": "chain-anneal-vt-delay",
      "title": "Anneal -> activation/diffusion -> Rs/Vt -> FO4/SRAM Vmin proxy",
      "domain_handoff": [
        "process",
        "device",
        "circuit",
        "memory"
      ],
      "measured_replacement_slots": [
        "sheet resistance",
        "SIMS junction profile",
        "Id-Vg",
        "FO4 delay"
      ],
      "public_boundary": "No implant or RTA recipe; all values remain teaching proxies unless replaced."
    },
    {
      "id": "chain-etch-cd-snm",
      "title": "Etch CD/LER -> Lg/Weff -> DIBL/Vt variability -> inverter delay/SRAM SNM",
      "domain_handoff": [
        "process",
        "device",
        "circuit",
        "memory"
      ],
      "measured_replacement_slots": [
        "CD-SEM",
        "LER sigma",
        "Id-Vg split",
        "SNM or delay table"
      ],
      "public_boundary": "No etch process setting or foundry signoff rule."
    },
    {
      "id": "chain-stress-mobility-delay",
      "title": "Stress liner/source-drain stressor -> mobility -> Idsat -> path delay",
      "domain_handoff": [
        "process",
        "device",
        "circuit"
      ],
      "measured_replacement_slots": [
        "Raman stress",
        "mobility extraction",
        "Idsat",
        "timing proxy"
      ],
      "public_boundary": "No proprietary stress module recipe or calibrated TCAD claim."
    },
    {
      "id": "chain-contact-rc-delay",
      "title": "Contact clean/silicide/contact anneal -> Rc/Rsd -> ring oscillator/bitline delay",
      "domain_handoff": [
        "process",
        "device",
        "circuit",
        "memory"
      ],
      "measured_replacement_slots": [
        "TLM contact resistance",
        "sheet resistance",
        "ring oscillator delay",
        "SRAM bitline delay"
      ],
      "public_boundary": "No qualified contact module claim; browser table is an original proxy sweep."
    },
    {
      "id": "chain-cmp-metal-rc",
      "title": "CMP dishing/erosion -> metal R/C -> STA slack/IR-drop proxy",
      "domain_handoff": [
        "process",
        "eda-layout",
        "digital-verification"
      ],
      "measured_replacement_slots": [
        "dishing metrology",
        "sheet resistance",
        "extracted RC",
        "timing slack"
      ],
      "public_boundary": "No product release or signoff result."
    },
    {
      "id": "chain-litho-focus-yield",
      "title": "Litho focus/exposure -> CD distribution -> timing and yield-tail risk",
      "domain_handoff": [
        "process",
        "metrology-yield",
        "circuit"
      ],
      "measured_replacement_slots": [
        "focus-exposure matrix",
        "CD uniformity",
        "timing distribution",
        "yield pareto"
      ],
      "public_boundary": "No lithography recipe or mask-specific rule."
    },
    {
      "id": "chain-plasma-etch-uq-yield",
      "title": "Plasma etch UQ -> depth/profile uniformity -> profile risk -> yield risk",
      "domain_handoff": [
        "process",
        "metrology-yield"
      ],
      "measured_replacement_slots": [
        "etch depth map",
        "profile angle",
        "selectivity",
        "defect or excursion labels"
      ],
      "public_boundary": "No optimizer recommendation or process setting."
    },
    {
      "id": "chain-wet-clean-native-oxide",
      "title": "Wet clean/native oxide -> interface state -> TLM/Rc -> circuit delay",
      "domain_handoff": [
        "process",
        "device",
        "circuit"
      ],
      "measured_replacement_slots": [
        "surface oxide",
        "contact angle",
        "TLM",
        "ring oscillator"
      ],
      "public_boundary": "No chemical sequence recipe or queue-time operating procedure."
    },
    {
      "id": "chain-gaa-geometry-sram",
      "title": "GAA nanosheet geometry -> electrostatics/cap -> SRAM/cell delay proxy",
      "domain_handoff": [
        "device",
        "circuit",
        "memory"
      ],
      "measured_replacement_slots": [
        "geometry split",
        "C-V",
        "Id-Vg",
        "cell delay or read margin"
      ],
      "public_boundary": "No calibrated foundry architecture claim."
    },
    {
      "id": "chain-cfet-stack-load",
      "title": "Forksheet/CFET stack choice -> parasitic load -> PPA sensitivity",
      "domain_handoff": [
        "device",
        "eda-layout",
        "circuit"
      ],
      "measured_replacement_slots": [
        "parasitic extraction",
        "standard-cell delay",
        "area",
        "power"
      ],
      "public_boundary": "No private library or node-specific PPA claim."
    },
    {
      "id": "chain-hybrid-bonding-continuity",
      "title": "Hybrid bonding surface/mechanical readiness -> continuity and thermal-risk proxy",
      "domain_handoff": [
        "process",
        "packaging-test-reliability",
        "metrology-yield"
      ],
      "measured_replacement_slots": [
        "roughness",
        "particle count",
        "bond void inspection",
        "thermal resistance"
      ],
      "public_boundary": "No qualification approval or assembly recipe."
    },
    {
      "id": "chain-metrology-guardband",
      "title": "Inline metrology uncertainty -> guardband decision -> false-pass/false-fail risk",
      "domain_handoff": [
        "metrology-yield",
        "process",
        "device"
      ],
      "measured_replacement_slots": [
        "repeatability",
        "reproducibility",
        "sample plan",
        "escape/yield labels"
      ],
      "public_boundary": "No private wafer data or product disposition."
    },
    {
      "id": "chain-stress-contact-coopt",
      "title": "Source/drain stress plus contact co-optimization -> Idsat/Rsd -> FO4/bitline delay",
      "domain_handoff": [
        "process",
        "device",
        "circuit",
        "memory"
      ],
      "measured_replacement_slots": [
        "stress metrology",
        "Rc",
        "Idsat",
        "FO4 or bitline delay"
      ],
      "public_boundary": "No module recipe or calibrated DTCO result."
    }
  ],
  "sourceSpine": [
    {
      "label": "NIST metrology and process-control uncertainty",
      "url": "https://www.nist.gov/publications/metrology-and-process-control-dealing-measurement-uncertainty",
      "use": "Anchors why inline measurements and uncertainty must be kept attached when process conditions change."
    },
    {
      "label": "TSMC design-technology co-optimization",
      "url": "https://www.tsmc.com/english/news-events/blog-article-20220615",
      "use": "Anchors the process, device, and design co-optimization vocabulary used for downstream handoffs."
    },
    {
      "label": "imec contact resistance challenge",
      "url": "https://www.imec-int.com/en/imec-magazine/imec-magazine-april-2019/solving-the-contact-resistance-challenge-for-7nm-and-beyond-cmos",
      "use": "Anchors contact resistance as a scaling limiter that belongs in device and circuit consequence chains."
    },
    {
      "label": "ALD on MoS2 with ozone or water oxidant",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC4134179/",
      "use": "Anchors ozone as a surface/ALD nucleation teaching topic while preserving material and process boundaries."
    },
    {
      "label": "UV ozone pretreatment for ALD nucleation",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC8911297/",
      "use": "Anchors surface pretreatment, nucleation, and film-continuity vocabulary for future chain replacements."
    },
    {
      "label": "FinFET stress-engineering review",
      "url": "https://www.mdpi.com/2079-9292/14/11/2099",
      "use": "Anchors stress, mobility, and device-performance coupling for future process-to-device chains."
    },
    {
      "label": "GAA nanosheet transistor review",
      "url": "https://www.mdpi.com/2079-9292/11/21/3589",
      "use": "Anchors gate-all-around geometry, electrostatics, and capacitance vocabulary for future chains."
    },
    {
      "label": "Hybrid bonding review",
      "url": "https://www.mdpi.com/2072-666X/13/4/537",
      "use": "Anchors bonding-surface and package-integration evidence for post-fab chain candidates."
    }
  ],
  "publicBoundary": [
    "Precomputed educational data only.",
    "No live server solver execution.",
    "No process recipe, gas-ratio recommendation, equipment-control instruction, or endpoint-control workflow.",
    "No PDK, NDA, proprietary, or paid source text is redistributed.",
    "No measured-silicon, qualification, yield-release, or signoff claim."
  ]
}