{
  "schema": "semiagora.process-simulation.v1",
  "experiment_id": "SA-PROC-FEOL-IMPLANT-ANNEAL-001",
  "title": "Ion implantation and anneal activation",
  "execution_mode": "precomputed-only",
  "model_boundary": "Educational implant/anneal replay. It is not SRIM, TCAD, a junction-engineering deck, a damage model, or an activation-calibration result.",
  "process": {
    "family": "front-end doping",
    "methods": ["ion implantation", "rapid thermal anneal"],
    "dose_cm2": 10000000000000,
    "tracked_knobs": [
      "implant energy",
      "projected range",
      "straggle",
      "anneal temperature"
    ]
  },
  "implant_profiles": [
    {
      "energy_kev": 20,
      "projected_range_nm": 45,
      "straggle_nm": 18,
      "peak_concentration_cm3": 2.2e18
    },
    {
      "energy_kev": 50,
      "projected_range_nm": 80,
      "straggle_nm": 30,
      "peak_concentration_cm3": 1.3e18
    },
    {
      "energy_kev": 100,
      "projected_range_nm": 120,
      "straggle_nm": 45,
      "peak_concentration_cm3": 8.9e17
    }
  ],
  "nominal_profile_samples": {
    "energy_kev": 50,
    "depth_nm": [0, 25, 50, 75, 100, 125, 150, 200],
    "normalized_concentration_percent": [3, 22, 65, 99, 80, 38, 11, 1]
  },
  "anneal_cases": [
    {
      "temperature_c": 850,
      "time_s": 10,
      "activation_percent": 42,
      "diffusion_broadening_nm": 5,
      "relative_sheet_resistance": 1
    },
    {
      "temperature_c": 950,
      "time_s": 10,
      "activation_percent": 72,
      "diffusion_broadening_nm": 12,
      "relative_sheet_resistance": 0.62
    },
    {
      "temperature_c": 1050,
      "time_s": 10,
      "activation_percent": 91,
      "diffusion_broadening_nm": 28,
      "relative_sheet_resistance": 0.44
    }
  ],
  "derived_metrics": {
    "nominal_projected_range_nm": 80,
    "nominal_peak_concentration_cm3": 1.3e18,
    "activation_at_950c_percent": 72,
    "high_temp_broadening_nm": 28,
    "public_claim": "Implant energy sets a depth distribution, while anneal trades activation against diffusion broadening."
  },
  "methods": [
    "Represent each implant energy with projected range, straggle, and peak concentration markers.",
    "Use one normalized 50 keV profile for browser plotting and reading-card review.",
    "Separate activation percentage from diffusion broadening so the anneal tradeoff stays visible.",
    "Keep the route educational until SRIM, TCAD, SIMS, sheet-resistance, and rights-clean calibration data are available."
  ],
  "limitations": [
    "No species-specific stopping, channeling, tilt/rotation, screen oxide, dose-rate effect, amorphization, damage, clustering, or solid-solubility limit is modeled.",
    "No transient enhanced diffusion, diffusion/activation coupling, junction leakage, or device-threshold prediction is included.",
    "No implant recipe, anneal recipe, facility setting, wafer qualification, or production doping recommendation is implied.",
    "Calibrated claims require SRIM/TCAD settings, measured SIMS profiles, electrical activation data, and redistribution rights."
  ],
  "sources": [
    {
      "label": "MIT OCW 6.774 readings",
      "url": "https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/pages/readings/",
      "use": "Public reading map for ion implantation, annealing, diffusion, transient enhanced diffusion, and profile measurement topics."
    },
    {
      "label": "MIT OCW 6.152J lecture notes",
      "url": "https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/pages/lecture-notes/",
      "use": "Public lecture-note index listing diffusion/implantation as part of micro/nano processing technology."
    }
  ]
}