{
  "schema": "semiagora.process-simulation.v1",
  "experiment_id": "SA-PROC-FEOL-LITHO-WINDOW-001",
  "title": "Photolithography exposure and focus window",
  "execution_mode": "precomputed-only",
  "model_boundary": "Educational process-window replay. It is not a scanner model, resist model, OPC model, mask qualification, or yield predictor.",
  "process": {
    "family": "pattern transfer",
    "method": "optical photolithography",
    "nominal_cd_nm": 100,
    "tracked_knobs": [
      "exposure dose",
      "focus offset",
      "critical dimension error",
      "process-window pass mask"
    ]
  },
  "dose_mj_cm2": [80, 90, 100, 110, 120],
  "focus_um": [-0.3, -0.15, 0, 0.15, 0.3],
  "cd_error_nm_matrix": [
    [18, 12, 7, 5, 9],
    [12, 5, 1, -2, 2],
    [10, 3, 0, -3, -8],
    [14, 7, 2, -1, 4],
    [22, 15, 9, 6, 11]
  ],
  "pass_mask_abs_cd_error_le_10_nm": [
    [false, false, true, true, true],
    [false, true, true, true, true],
    [true, true, true, true, true],
    [false, true, true, true, true],
    [false, false, true, true, false]
  ],
  "derived_metrics": {
    "pass_points": 18,
    "grid_points": 25,
    "nominal_cd_error_nm": 0,
    "best_focus_um": 0,
    "nominal_dose_mj_cm2": 100,
    "public_claim": "A lithography result should state the acceptable dose/focus window, not only the nominal CD."
  },
  "methods": [
    "Treat every dose-focus pair as a saved teaching point.",
    "Classify a point as passing when the absolute CD error is 10 nm or lower.",
    "Keep CD error and process-window classification separate so the user can inspect the margin.",
    "Use the route as a vocabulary bridge before measured FEM or Bossung data are added."
  ],
  "limitations": [
    "No photoresist chemistry, post-exposure bake, development kinetics, standing waves, line-edge roughness, stochastic defects, OPC, RET, or mask error is modeled.",
    "No scanner NA, illumination source, overlay, depth-of-focus calibration, or reticle inspection data is included.",
    "No production process window, yield claim, or qualified lithography recipe is implied.",
    "Measured focus-exposure matrices, metrology uncertainty, and rights-clean mask context are required before calibrated claims."
  ],
  "sources": [
    {
      "label": "MIT OCW 6.152J lecture notes",
      "url": "https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/pages/lecture-notes/",
      "use": "Public lecture-note index covering lithography, soft lithography, oxidation, diffusion, sputtering, evaporation, and etching topics."
    },
    {
      "label": "MIT OCW semiconductor process variation",
      "url": "https://ocw.mit.edu/courses/2-830j-control-of-manufacturing-processes-sma-6303-spring-2008/resources/2-semiconductor-process-variation/",
      "use": "Public process-variation context for separating nominal results from temporal and spatial variation."
    }
  ]
}