{
  "schema": "semiagora.process-role-view-matrix.v1",
  "version": "2026-08-31-v116",
  "title": "Process Module Role Views",
  "route": "/domains/process/role-views",
  "purpose": "Split process learning into operator, engineer, integration, and yield views so process content is useful without becoming a recipe or equipment-control workflow.",
  "counts": {
    "modules": 9,
    "roles": 4,
    "linkedSimulationRoutes": 76,
    "liveServerRuns": 0
  },
  "roles": [
    {
      "id": "operator",
      "label": "Operator View",
      "question": "What condition, state, consumable, sequence, and safety boundary must be checked before trusting the run record?",
      "artifact": "tool-state checklist, lot traveler fields, alarm context, endpoint trace, maintenance note, and handoff log"
    },
    {
      "id": "engineer",
      "label": "Engineer View",
      "question": "Which knobs move the target metric, which side effects appear, and what monitor structure proves the direction?",
      "artifact": "split-lot table, response surface, monitor data, model boundary, and action recommendation"
    },
    {
      "id": "integration",
      "label": "Integration View",
      "question": "How does this module change the next process, device I-V/C-V, interconnect parasitics, circuit delay, reliability, or design rule?",
      "artifact": "module handoff map, thermal budget ledger, contamination boundary, layout sensitivity, and DTCO/STCO note"
    },
    {
      "id": "yield",
      "label": "Yield View",
      "question": "What distribution, excursion, defect pareto, or measurement uncertainty determines whether the evidence is fit for a decision?",
      "artifact": "SPC chart, wafer map, confidence statement, defect pareto, guardband, and review gate"
    }
  ],
  "modules": [
    {
      "slug": "surface-ald",
      "module": "O2/O3 or plasma surface preparation to ALD nucleation",
      "operator_view": "Check wafer queue time, preclean state, O2/O3/plasma exposure record, chamber pressure, purge timing, wafer temperature, byproduct removal, particle log, and safety boundary.",
      "engineer_view": "Study nucleation delay, growth-per-cycle saturation, film density, interface state proxy, leakage risk, conformality, and throughput tradeoff.",
      "integration_view": "Connect pretreatment to dielectric quality, contact/via resistance, interface traps, downstream thermal budget, contamination risk, and module handoff criteria.",
      "yield_view": "Track thickness nonuniformity, particle adders, leakage tail, lot split delta, metrology uncertainty, and excursion rules before claiming improvement.",
      "linked_simulation_routes": [
        "/simulations/o2-o3-surface-treatment-ald-nucleation",
        "/simulations/o2-o3-ald-nucleation-interactive",
        "/simulations/process-ald-growth-window",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/deposition-evidence-atlas",
        "/simulations/factory-facilities-evidence-atlas"
      ],
      "next_interactive_lab": "Add wafer-radius resampling and contact-angle/proxy leakage split views when rights-clean data exists."
    },
    {
      "slug": "pvd-sputter-evaporation",
      "module": "PVD, sputter, and evaporation thin-film deposition",
      "operator_view": "Check target condition, chamber base pressure, power or rate setpoint record, wafer rotation, shield/seasoning state, thickness monitor, and particle log.",
      "engineer_view": "Study deposition rate, step coverage, film stress, sheet resistance, adhesion, composition drift, target aging, and uniformity tradeoff.",
      "integration_view": "Connect film continuity to contact resistance, barrier/seed readiness, via fill, electromigration margin, CMP burden, and package/interconnect parasitics.",
      "yield_view": "Track thickness map, Rs map, void/open risk, stress-related defects, chamber matching, and lot-to-lot drift.",
      "linked_simulation_routes": [
        "/simulations/sputter-pvd-step-coverage",
        "/simulations/process-sputter-uniformity",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/deposition-evidence-atlas"
      ],
      "next_interactive_lab": "Add browser replay comparing sputter directionality, evaporation line-of-sight limits, and ALD conformality on the same topology."
    },
    {
      "slug": "lithography-overlay",
      "module": "Lithography focus, exposure, overlay, and CD control",
      "operator_view": "Check reticle, resist coat/bake state, focus/exposure recipe record, alignment marks, track status, develop state, and inspection hold points.",
      "engineer_view": "Study process window, CD bias, overlay residual, focus sensitivity, exposure latitude, LER, and resist/process interaction.",
      "integration_view": "Connect CD/overlay to transistor width, contact landing, via enclosure, BEOL capacitance, SRAM cell rules, and DTCO design margins.",
      "yield_view": "Track CD distribution, overlay vectors, wafer/location signature, missing/bridging defect risk, rework boundary, and guardband choice.",
      "linked_simulation_routes": [
        "/simulations/lithography-focus-exposure-window",
        "/simulations/lithography-etch-feedforward-control-replay",
        "/simulations/apc-fdc-feedforward-decision-replay",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/patterning-module-evidence-atlas",
        "/simulations/packaging-test-evidence-atlas"
      ],
      "next_interactive_lab": "Use the lithography-to-etch feedforward replay to connect focus/CD/overlay evidence to downstream etch and Cpk-style yield gates."
    },
    {
      "slug": "dry-etch-pattern-transfer",
      "module": "Dry etch and pattern transfer",
      "operator_view": "Check approved chamber, source, bias, matching, gas, vacuum, wall-history, endpoint, mask-retention, damage, interlock, maintenance, and safety records without treating a teaching proxy as an equipment or wafer action.",
      "engineer_view": "Separate ion access, reactive-neutral availability, passivation retention, chemical and physical removal, synergy, mask erosion, selectivity, damage, transport, profile control, stability, and model discrepancy before proposing a physical study.",
      "integration_view": "Connect owned vacuum and plasma state to material stack, feature access, mask and stop layers, profile evolution, CD, device impact, residue, downstream clean, PTCO/DTCO, and replacement-evidence review.",
      "yield_view": "Track calibrated rate, selectivity, CD, depth, sidewall, roughness, damage, charging, endpoint, chamber matching, repeatability, wafer signature, Gauge R&R, false alarm, escape risk, and accountable disposition evidence.",
      "linked_simulation_routes": [
        "/simulations/plasma-etch-uq-profile-window",
        "/simulations/plasma-etch-heteroscedastic-uq",
        "/simulations/etch-cd-device-delay-chain-interactive",
        "/simulations/lithography-etch-feedforward-control-replay",
        "/simulations/apc-fdc-feedforward-decision-replay",
        "/simulations/reactive-ion-etch-mechanism-evidence-map",
        "/simulations/ccp-icp-chamber-state-evidence-map",
        "/simulations/particle-monte-carlo-feature-topography-evidence-map",
        "/simulations/vacuum-gas-delivery-inventory-evidence-map",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/etch-depth-evidence-atlas",
        "/simulations/sensor-control-evidence-atlas",
        "/simulations/factory-facilities-evidence-atlas",
        "/simulations/packaging-test-evidence-atlas"
      ],
      "next_interactive_lab": "Use the v109 mechanism replay first, then replace normalized states with owned material, chamber, plasma, surface, mask, profile, damage, endpoint, uncertainty, and model-to-measurement evidence under accountable equipment, integration, metrology, and safety governance."
    },
    {
      "slug": "implant-anneal",
      "module": "Implant, activation anneal, and thermal budget",
      "operator_view": "Check species, dose, energy, tilt, wafer temperature, anneal ramp/soak/cool-down record, queue time, and contamination boundary.",
      "engineer_view": "Study activation, diffusion, residual damage, junction leakage, sheet resistance, contact/silicide readiness, contact resistance, and short-channel control.",
      "integration_view": "Connect thermal budget to gate stack, spacers, strain, silicide, contact resistance, Vt distribution, SRAM assist margin, FO4 delay, and bitline delay.",
      "yield_view": "Track Rs map, Vt distribution, leakage tail, parametric binning, monitor-structure correlation, and confidence for release gates.",
      "linked_simulation_routes": [
        "/simulations/anneal-activation-diffusion",
        "/simulations/anneal-device-circuit-chain-interactive",
        "/simulations/process-rta-activation-diffusion",
        "/simulations/contact-resistance-delay-chain-interactive",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/patterning-module-evidence-atlas"
      ],
      "next_interactive_lab": "Use the contact-resistance-to-delay chain, then replace proxy rows with TLM, sheet-R, Id-Vg, ring oscillator, or SRAM bitline data when rights-clean evidence exists."
    },
    {
      "slug": "cmp-planarization",
      "module": "CMP and planarization",
      "operator_view": "Check pad/slurry/conditioner state, pressure, platen speed, endpoint, clean recipe record, consumable lifetime, scratch log, and hold criteria.",
      "engineer_view": "Study removal rate, selectivity, dishing, erosion, planarity, pattern-density sensitivity, residue, and post-CMP clean effectiveness.",
      "integration_view": "Connect topography to lithography focus, via/contact landing, BEOL resistance/capacitance, hybrid bonding readiness, and packaging reliability.",
      "yield_view": "Track dishing/erosion maps, scratch counts, open/short risk, thickness-control SPC, and pattern-density correlation.",
      "linked_simulation_routes": [
        "/simulations/cmp-pattern-density-dishing-erosion",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/deposition-evidence-atlas",
        "/simulations/patterning-module-evidence-atlas",
        "/simulations/sensor-control-evidence-atlas",
        "/simulations/packaging-test-evidence-atlas"
      ],
      "next_interactive_lab": "Add pattern-density CSV replay with route-level BEOL RC and open/short risk proxies."
    },
    {
      "slug": "wet-clean-contamination",
      "module": "Wet clean, residue removal, and contamination control",
      "operator_view": "Check chemical bath age, concentration record, rinse/dry state, queue time, wafer carrier cleanliness, particle monitor, and chemical safety boundary.",
      "engineer_view": "Study particle removal, metal/organic residue risk, oxide regrowth, surface termination, contact angle, and defect tradeoff.",
      "integration_view": "Connect surface condition to ALD nucleation, contact resistance, gate-stack interface, etch residue removal, and wafer bonding readiness.",
      "yield_view": "Track particle adders, residue defect pareto, contamination monitor trend, leakage tail, and excursion containment.",
      "linked_simulation_routes": [
        "/simulations/process-wet-clean-contamination-removal",
        "/simulations/o2-o3-surface-treatment-ald-nucleation",
        "/simulations/contact-resistance-delay-chain-interactive",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/etch-depth-evidence-atlas",
        "/simulations/deposition-evidence-atlas",
        "/simulations/patterning-module-evidence-atlas",
        "/simulations/sensor-control-evidence-atlas",
        "/simulations/factory-facilities-evidence-atlas",
        "/simulations/packaging-test-evidence-atlas"
      ],
      "next_interactive_lab": "Use the clean-to-contact and clean-to-ALD chain backlog with uncertainty bands before promoting measured replacement data."
    },
    {
      "slug": "metrology-spc-yield",
      "module": "Inline metrology, SPC, and yield decision evidence",
      "operator_view": "Check calibration state, sampling plan, lot, wafer, die, device, measurement, test, recipe version, tool health, alarm, hold, release, disposition, and data-integrity records; a teaching browser cannot authorize an action.",
      "engineer_view": "Study measurement repeatability, bias, sensitivity, response-model and monitor-structure relevance, then separate variation family, measurement-system contribution, device-model transfer, circuit, reliability and test context, spatial correlation, genealogy, and uncertainty before proposing causal attribution.",
      "integration_view": "Connect metrology and owned process-module outputs to process control, device characterization, compact-model validation, circuit guardbands and margin, reliability screens, test, design-rule review, and yield evidence through explicit interfaces and accountable PTCO or DTCO review.",
      "yield_view": "Track control charts, capability indices, denominator, sampling, map transforms, defect pareto and bin taxonomy, lot-wafer-die-device genealogy, false-alarm and escape risk, model discrepancy, confidence, change control, and human disposition governance.",
      "linked_simulation_routes": [
        "/simulations/small-data-virtual-metrology-replay",
        "/simulations/process-spc-capability",
        "/simulations/process-doe-response-surface",
        "/simulations/process-cd-sem-overlay-control",
        "/simulations/process-ellipsometry-thickness-fit",
        "/simulations/lithography-etch-feedforward-control-replay",
        "/simulations/apc-fdc-feedforward-decision-replay",
        "/simulations/gauge-rr-metrology-system-replay",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/etch-depth-evidence-atlas",
        "/simulations/deposition-evidence-atlas",
        "/simulations/patterning-module-evidence-atlas",
        "/simulations/sensor-control-evidence-atlas",
        "/simulations/factory-facilities-evidence-atlas",
        "/simulations/packaging-test-evidence-atlas"
      ],
      "next_interactive_lab": "Use the v94 Gauge R&R decision replay beside the APC/FDC decision replay, virtual metrology, defect pareto, split-lot DOE, and owned raw measurement-system replacement evidence. Use the v110 replay to identify missing cross-domain process, device, circuit, reliability, test, genealogy, yield, uncertainty, and accountable approval records before operational use."
    },
    {
      "slug": "vacuum-gas-delivery",
      "module": "Vacuum, gas delivery, conductance, pumping, and chamber inventory",
      "operator_view": "Check approved gauge, MFC, valve, pump, gas-panel, foreline, abatement, interlock, chamber-history, leak/outgassing, maintenance, and safety records without treating a teaching proxy as an equipment action.",
      "engineer_view": "Separate admitted load, wall release, conductance, nominal pump capability, effective pumping, chamber/foreline inventory, settling, residence, distribution, and measurement uncertainty before proposing a physical study.",
      "integration_view": "Connect owned vacuum and delivery evidence to wall state, plasma source and sheath behavior, wafer-facing distributions, deposition or etch response, contamination, throughput, PTCO/DTCO, and downstream module requirements.",
      "yield_view": "Track calibrated pressure and flow distributions, transient signatures, chamber matching, repeatability, drift, Gauge R&R, false alarms, escape risk, wafer correlation, and accountable review gates.",
      "linked_simulation_routes": [
        "/simulations/vacuum-gas-delivery-inventory-evidence-map",
        "/simulations/ccp-icp-chamber-state-evidence-map",
        "/simulations/eqp-vacuum-pumpdown-envelope",
        "/simulations/reactive-ion-etch-mechanism-evidence-map",
        "/simulations/process-device-yield-integration-evidence-map",
        "/simulations/etch-depth-evidence-atlas",
        "/simulations/deposition-evidence-atlas",
        "/simulations/sensor-control-evidence-atlas",
        "/simulations/factory-facilities-evidence-atlas"
      ],
      "next_interactive_lab": "Use the v108 browser inventory replay first, then replace normalized states with owned geometry, pump/conductance curves, calibrated pressure/flow traces, wall history, uncertainty, and plasma-response evidence under site-specific safety governance."
    }
  ],
  "handoff_chains": [
    {
      "id": "small-data-virtual-metrology",
      "title": "Sparse physical metrology -> model uncertainty -> guardband and sample-more decision",
      "route": "/simulations/small-data-virtual-metrology-replay",
      "decision": "Use when a metrology-reduction, VM model, or yield release claim needs uncertainty, drift, and physical-measurement coverage visible."
    },
    {
      "id": "litho-etch-feedforward",
      "title": "Post-lithography CD / overlay -> etch bias -> Cpk and delay proxy",
      "route": "/simulations/lithography-etch-feedforward-control-replay",
      "decision": "Use when a lithography measurement is being connected to downstream etch correction, yield evidence, or circuit-delay consequence."
    },
    {
      "title": "Surface prep -> ALD film -> capacitor proxy -> leakage-risk proxy",
      "route": "/simulations/o2-o3-ald-nucleation-interactive",
      "decision": "Use when a surface-treatment change claims better nucleation or lower leakage risk."
    },
    {
      "title": "Anneal -> activation/diffusion -> Rs/Vt proxy -> FO4 delay proxy",
      "route": "/simulations/anneal-device-circuit-chain-interactive",
      "decision": "Use when a thermal process change claims device or circuit-speed improvement."
    },
    {
      "title": "Etch profile/CD -> DIBL/LER proxy -> inverter delay proxy",
      "route": "/simulations/etch-cd-device-delay-chain-interactive",
      "decision": "Use when pattern-transfer changes are being connected to device and timing effects."
    },
    {
      "id": "contact-rc-delay-chain",
      "title": "Contact clean / silicide / anneal -> Rc/Rsd proxy -> ring oscillator and bitline delay proxy",
      "route": "/simulations/contact-resistance-delay-chain-interactive",
      "decision": "Use when contact-related process evidence is being connected to device resistance, circuit delay, or memory peripheral timing."
    },
    {
      "id": "apc-fdc-feedforward-decision",
      "title": "Equipment signal / FDC state / VM uncertainty -> feedforward handoff -> owner review gate",
      "route": "/simulations/apc-fdc-feedforward-decision-replay",
      "decision": "Use when process-control language needs data quality, FDC confidence, sampling coverage, false-alarm risk, wafer-at-risk, and role review visible before any claim."
    },
    {
      "id": "vacuum-gas-to-plasma-state",
      "title": "Gas admission / wall source / effective pumping -> inventory state -> bounded CCP/ICP handoff",
      "route": "/simulations/vacuum-gas-delivery-inventory-evidence-map",
      "decision": "Use when vacuum or gas-delivery language is being connected to chamber-state, plasma, etch, or deposition evidence without exposing equipment commands, recipes, or safety procedures."
    },
    {
      "id": "plasma-state-to-rie-to-feature-profile",
      "title": "Vacuum and CCP/ICP context -> bounded RIE mechanism state -> feature-profile evidence handoff",
      "route": "/simulations/reactive-ion-etch-mechanism-evidence-map",
      "decision": "Use when plasma-state language is being connected to surface removal, passivation, mask, damage, or feature-profile evidence without exposing physical setpoints, chemistry, recipes, geometry, commands, endpoint actions, or automatic wafer decisions."
    },
    {
      "id": "process-device-circuit-reliability-yield-evidence",
      "title": "Process variation -> device evidence -> circuit margin -> reliability and test -> genealogy and yield review",
      "route": "/simulations/process-device-yield-integration-evidence-map",
      "decision": "Use to expose cross-domain evidence ownership and the v120 human publication gate without producing causal, control, calibration, signoff, qualification, disposition, or automatic publication decisions."
    },
    {
      "id": "etch-family-depth-selectivity-residue-evidence",
      "title": "Etch mechanism family -> profile and surface fate -> residue and metrology -> integration and yield review",
      "route": "/simulations/etch-depth-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership and replacement slots without choosing chemistry, recommending a recipe, operating equipment, setting an endpoint, releasing material, disposing a wafer, or making a yield or publication decision."
    },
    {
      "id": "deposition-family-film-interface-gapfill-evidence",
      "title": "Surface and delivery evidence -> deposition-family mechanism -> film and interface state -> planarization, metrology, integration, and yield review",
      "route": "/simulations/deposition-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership and replacement slots without choosing a material or precursor, recommending a recipe, operating equipment, releasing material, disposing a wafer, or making a yield or publication decision."
    },
    {
      "id": "patterning-module-flow-evidence",
      "title": "Mask and substrate evidence -> patterning and implant -> thermal, clean, and CMP state -> metrology, integration, and yield review",
      "route": "/simulations/patterning-module-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership and replacement slots without recommending settings, operating equipment, accepting material, disposing a wafer, signing off integration, claiming yield, or publishing automatically."
    },
    {
      "id": "sensor-metrology-control-evidence",
      "title": "Process and equipment state -> sensor and measurement evidence -> FDC, inspection, maintenance, and yield review",
      "route": "/simulations/sensor-control-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership and replacement slots without recommending thresholds or settings, diagnosing a fault, operating equipment, triggering maintenance, accepting material, disposing a wafer, claiming yield, releasing a process, or publishing automatically."
    },
    {
      "id": "factory-facilities-sustainability-evidence",
      "title": "Process and equipment state -> factory routing -> facilities and abatement -> resource and emissions accounting review",
      "route": "/simulations/factory-facilities-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership, accounting boundaries, and replacement slots without dispatching work, recommending settings, sizing facilities, commanding abatement, certifying an inventory, claiming compliance, accepting material, disposing a wafer, releasing a process, or publishing automatically."
    },
    {
      "id": "packaging-test-evidence",
      "title": "Bonding and interfaces -> singulation -> probe and test -> panel packaging -> reliability and disposition review",
      "route": "/simulations/packaging-test-evidence-atlas",
      "decision": "Use to expose family-specific evidence ownership and replacement slots without recommending a material, recipe, setting, calibration, limit, coverage target, reliability result, acceptance, qualification, binning, disposition, production release, or automatic publication."
    }
  ],
  "public_boundary": [
    "Browser-side data browsing only.",
    "No process recipe, tool-setting instruction, gas-ratio recommendation, equipment-control workflow, or interlock procedure.",
    "No live solver, no uploaded wafer data, no proprietary PDK/model ingestion, no article-body mirroring, and no foundry/product qualification claim.",
    "All numeric values are teaching proxies unless a future measured-replacement dataset is explicitly reviewed and cited.",
    "No APC programming, FDC deployment rule, equipment-control workflow, quality disposition, or production setting is enabled."
  ],
  "source_spine": [
    {
      "label": "NIST CHIPS Metrology Program",
      "url": "https://www.nist.gov/chips/research-development-programs/metrology-program",
      "use": "Category-level provenance for semiconductor metrology, measurement assurance, reference methods, and standards needs."
    },
    {
      "label": "NIST metrology and process-control uncertainty",
      "url": "https://www.nist.gov/publications/metrology-and-process-control-dealing-measurement-uncertainty",
      "use": "Anchors measurement uncertainty and process-control evidence boundaries."
    },
    {
      "label": "TSMC design-technology co-optimization",
      "url": "https://www.tsmc.com/english/news-events/blog-article-20220615",
      "use": "Anchors process, device, and design co-optimization vocabulary."
    },
    {
      "label": "imec STCO overview",
      "url": "https://www.imec-int.com/en/articles/unlocking-system-scaling-bottlenecks-system-technology-co-optimization",
      "use": "System-to-technology handoff vocabulary for integration view."
    },
    {
      "label": "OpenROAD Flow Scripts tutorial",
      "url": "https://openroad-flow-scripts.readthedocs.io/en/latest/tutorials/FlowTutorial.html",
      "use": "Open EDA handoff vocabulary for process-to-layout educational chains."
    },
    {
      "label": "imec contact resistance challenge",
      "url": "https://www.imec-int.com/en/imec-magazine/imec-magazine-april-2019/solving-the-contact-resistance-challenge-for-7nm-and-beyond-cmos",
      "use": "Anchors contact resistance as a scaling limiter that affects downstream electrical behavior."
    },
    {
      "label": "UV ozone pretreatment for ALD nucleation",
      "url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC8911297/",
      "use": "Anchors surface pretreatment and nucleation vocabulary for future chain replacement data."
    },
    {
      "label": "Feedforward control topic signal",
      "url": "https://semiengineering.com/dont-scrap-it-save-it-feedforward-control-for-modern-semiconductor-manufacturing/",
      "use": "Anchors feedforward process-control vocabulary as a link-only source signal; no vendor/tool workflow is copied."
    },
    {
      "label": "SEMI Smart Manufacturing Standards",
      "url": "https://www.semi.org/en/industry-groups/smart-manufacturing/standards",
      "use": "Official public SEMI standards index for E116, E126, E133, E157, and EDA-family context. SemiAgora uses it as a link-only anchor."
    },
    {
      "label": "SEMI E133 automated process-control systems interface",
      "url": "https://store-us.semi.org/products/e13300-semi-e133-specification-for-automated-process-control-systems-interface",
      "use": "Official listing for process-control-system interface vocabulary including run-to-run control, fault detection, fault classification, and SPC. The standard body is not copied."
    },
    {
      "label": "Next-generation SEMI EDA standards",
      "url": "https://www.semi.org/en/next-gen-semi-eda-standards",
      "use": "Official SEMI article anchoring equipment data acquisition and high-volume data publication vocabulary. No implementation guide or equipment workflow is copied."
    },
    {
      "label": "NIST semiconductor virtual metrology dynamic sampling",
      "url": "https://www.nist.gov/publications/comparative-study-semiconductor-virtual-metrology-methods-and-novel-algorithmic",
      "use": "Public NIST publication page for VM uncertainty, drift, dynamic sampling, and process-control needs."
    },
    {
      "label": "IRDS / NIST virtual metrology white paper",
      "url": "https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924090",
      "use": "Public VM white-paper anchor for confidence, data quality, R2R, smart sampling, model maintenance, and yield interaction vocabulary."
    },
    {
      "label": "II.8 - Vacuum Systems",
      "url": "https://cds.cern.ch/record/2929324",
      "use": "Pressure, gas density, mean free path, throughput, conductance, pumping speed, effective pumping speed, outgassing, and instrumentation ownership vocabulary."
    },
    {
      "label": "Vacuum Technology for Superconducting Devices",
      "url": "https://cds.cern.ch/record/1974068",
      "use": "Pump throughput, capture probability, nominal versus effective pumping speed, and conductance-limited system vocabulary."
    },
    {
      "label": "Introduction to the Principles of Vacuum Physics",
      "url": "https://cds.cern.ch/record/582156",
      "use": "Kinetic-theory, pressure, density, mean-free-path, conductance, temperature, and gas-flow scope."
    },
    {
      "label": "ALD / PEALD / Plasma science for semiconductor manufacturing report",
      "url": "https://science.osti.gov/-/media/fes/pdf/2023/DOE_FES_PlasmaScience_Semiconductors_Final.pdf",
      "use": "Thermal ALD, plasma-assisted ALD, sequential half-cycle, purge, and throughput evidence ownership."
    },
    {
      "label": "Ion- and electron-assisted gas-surface chemistry - An important effect in plasma etching",
      "url": "https://doi.org/10.1063/1.326355",
      "use": "Historical ownership of ion-assisted gas-surface synergy vocabulary."
    },
    {
      "label": "Plasma etching: Yesterday, today, and tomorrow",
      "url": "https://doi.org/10.1116/1.4819316",
      "use": "Plasma-etch mechanism, selectivity, profile, damage, surface-chemistry, and scaling vocabulary."
    },
    {
      "label": "Feature-scale model of Si etching in SF6 plasma and comparison with experiments",
      "url": "https://doi.org/10.1116/1.1830495",
      "use": "Feature-scale transport, surface coverage, physical removal, chemical removal, ion-enhanced removal, mask, and experiment-comparison ownership."
    },
    {
      "label": "SEMI Standards: Traceability",
      "url": "https://www.semi.org/en/products-services/standards/traceability",
      "use": "Category-level provenance for device, manufacturing, test, assembly, and supply-chain traceability boundaries."
    },
    {
      "label": "SEMI Standards: Information and Control",
      "url": "https://www.semi.org/en/products-services/standards/information_and_control",
      "use": "Category-level provenance for substrate tracking, equipment quality, advanced process control, data collection, and mapping vocabulary families."
    },
    {
      "label": "SEMI T23 - Specification for Single Device Traceability for the Supply Chain",
      "url": "https://store-us.semi.org/products/t02300-semi-t23-specification-for-single-device-traceability-for-the-supply-chain",
      "use": "Category-level provenance for single-device identity and supply-chain traceability boundaries."
    },
    {
      "label": "2024 International Roadmap for Devices and Systems: Metrology",
      "url": "https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=959302",
      "use": "Category-level roadmap provenance for semiconductor metrology, characterization, uncertainty, and cross-domain measurement challenges."
    },
    {
      "label": "2023 International Roadmap for Devices and Systems: Factory Integration",
      "url": "https://irds.ieee.org/images/files/pdf/2023/2023IRDS_FAC.pdf",
      "use": "Category-level roadmap provenance for factory integration, data, equipment, traceability, and manufacturing-system boundaries."
    },
    {
      "label": "DRIE / Method of anisotropically etching silicon",
      "url": "https://patents.google.com/patent/US5501893A/en",
      "use": "Foundational time-multiplexed etch and passivation process taxonomy."
    },
    {
      "label": "Strip / ash / Resist stripping in an O2 + H2O plasma downstream",
      "url": "https://doi.org/10.1116/1.585575",
      "use": "Remote/downstream radical-delivery, resist-removal, contamination, and additive-context evidence categories."
    },
    {
      "label": "Wet etch / Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I. Orientation Dependence and Behavior of Passivation Layers",
      "url": "https://doi.org/10.1149/1.2086277",
      "use": "Crystal-orientation, passivation, and anisotropic-etch evidence categories."
    },
    {
      "label": "PVD / UCRL-JC-128289 magnetron sputter deposition and thickness uniformity study",
      "url": "https://www.osti.gov/servlets/purl/310916",
      "use": "Target erosion, substrate motion, spatial deposition, and thickness-uniformity evidence ownership."
    },
    {
      "label": "CVD / PECVD / Apparatus for characterizing gas-phase chemical precursor delivery for thin-film deposition",
      "url": "https://www.nist.gov/publications/apparatus-characterizing-gas-phase-chemical-precursor-delivery-thin-film-deposition",
      "use": "Precursor-delivery, delivered-flux, source-container, and delivery-evidence ownership."
    },
    {
      "label": "LPCVD / furnace / General Relationship for the Thermal Oxidation of Silicon",
      "url": "https://doi.org/10.1063/1.1713945",
      "use": "Thermal-oxidation transport, interface-reaction, and thickness-evolution evidence categories."
    },
    {
      "label": "Epitaxy / A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor",
      "url": "https://doi.org/10.1149/1.2407685",
      "use": "Silicon epitaxy transport and reactor-loading evidence categories."
    },
    {
      "label": "Selective deposition / Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns",
      "url": "https://doi.org/10.1021/acsami.7b13365",
      "use": "SAM blocking, precursor interaction, and unintended nucleation evidence categories."
    },
    {
      "label": "ECD / gap-fill / Damascene copper electroplating for chip interconnections",
      "url": "https://doi.org/10.1147/rd.425.0567",
      "use": "Damascene copper electroplating, feature-fill, void or seam, and planarization context categories."
    },
    {
      "label": "Lithography / track / Lenses and mirrors - Lithography principles",
      "url": "https://www.asml.com/en/technology/lithography-principles/lenses-and-mirrors",
      "use": "DUV lens, EUV mirror, numerical-aperture, focus, and imaging vocabulary categories."
    },
    {
      "label": "Ion implant / VIISta Trident high-current ion implantation system",
      "url": "https://www.appliedmaterials.com/us/en/product-library/viista-trident.html",
      "use": "High-current implant-family, beamline, wafer charging, and contamination-control vocabulary categories."
    },
    {
      "label": "Thermal / RTP / laser / TELINDY Series batch thermal processing systems",
      "url": "https://www.tel.com/product/telindy.html",
      "use": "Batch-furnace, heater-control, ramp, thermal-uniformity, oxidation, anneal, and process-control vocabulary categories."
    },
    {
      "label": "Clean / surface / CELLESTA single-wafer cleaning system",
      "url": "https://www.tel.com/product/cellesta.html",
      "use": "Single-wafer cleaning, wet processing, surface conditioning, rinse, drying, and contamination-control vocabulary categories."
    },
    {
      "label": "CMP / Model F-REX chemical mechanical polishing system",
      "url": "https://www.ebara.com/global-en/products/FREX/",
      "use": "CMP equipment, carrier and platen architecture, polishing, cleaning, endpoint-monitor, in-line metrology, and equipment-ownership vocabulary categories."
    },
    {
      "label": "Mask / reticle / SEMI P39: Specification for OASIS Open Artwork System Interchange Standard",
      "url": "https://store-us.semi.org/products/p03900-semi-p39-specification-for-oasis%C2%AE-open-artwork-system-interchange-standard",
      "use": "OASIS design-data interchange and revision-control vocabulary categories."
    },
    {
      "label": "Substrate / wafering / SEMI M1: Specification for Polished Single Crystal Silicon Wafers",
      "url": "https://store-us.semi.org/products/m00100-semi-m1-specification-for-polished-single-crystal-silicon-wafers",
      "use": "Polished silicon substrate, starting-wafer, slicing, polishing, and dimensional-quality vocabulary categories."
    },
    {
      "label": "Endpoint sensor / EV-140C Optical Emission Spectroscopy Etching End-point Monitor",
      "url": "https://www.horiba.com/sgp/semiconductor/products/detail/action/show/Product/ev-140c-676/",
      "use": "OES signal collection, endpoint and chamber-condition monitoring, spectral-trend, noise-immunity, and equipment-boundary vocabulary categories."
    },
    {
      "label": "Inspection / metrology / Wafer defect inspection systems: optical and electron-beam methods",
      "url": "https://www.hitachi-hightech.com/global/products/device/semiconductor/inspection.html",
      "use": "Bright-field, dark-field, electron-beam, voltage-contrast, inspection-throughput, defect-review, and method-selection vocabulary categories."
    },
    {
      "label": "Chamber state / FDC / Virtual sensor innovation for higher productivity",
      "url": "https://newsroom.lamresearch.com/virtual-sensor-innovation-for-higher-productivity?blog=true",
      "use": "Fleet matching, multivariate tool-sensor analysis, chamber troubleshooting, predictive-chart, virtual-metrology, drift, and preventive-maintenance vocabulary categories."
    },
    {
      "label": "Edge / bevel / backside / Coronus Product Family: Plasma Bevel Etch and Deposition",
      "url": "https://www.lamresearch.com/product/coronus-product-family/",
      "use": "Bevel etch, bevel deposition, residue, film, edge protection, particle migration, edge exclusion, and yield-handoff vocabulary categories."
    },
    {
      "label": "Cluster routing / SEMI E30: Generic Model for Communications and Control of Manufacturing Equipment",
      "url": "https://store-us.semi.org/products/e03000-semi-e30-specification-for-the-generic-model-for-communications-and-control-of-manufacturing-equipment-gem",
      "use": "Equipment behavior, communications, state, event, alarm, command, and host-interface vocabulary categories."
    },
    {
      "label": "Facility / abatement / SEMI S2: Environmental, Health, and Safety Guideline for Semiconductor Manufacturing Equipment",
      "url": "https://store-us.semi.org/products/s00200-semi-s2-environmental-health-and-safety-guideline-for-semiconductor-manufacturing-equipment",
      "use": "Equipment-level EHS, hazard review, documentation, and facility-interface vocabulary categories."
    },
    {
      "label": "Sustainability / metering / SEMI S23 - Guide for Conservation of Energy, Utilities and Materials Used by Semiconductor Manufacturing Equipment",
      "url": "https://store-us.semi.org/products/s02300-semi-s23-guide-for-conservation-of-energy-utilities-and-materials-used-by-semiconductor-manufacturing-equipment",
      "use": "Category-level provenance for equipment energy, utility, material, and operating-mode conservation boundaries."
    },
    {
      "label": "Bonding / interface / SEMI 3D2 - Glass Carrier Wafers for 3DS-IC Applications",
      "url": "https://store-us.semi.org/products/3d00200-semi-3d2-specification-for-glass-carrier-wafers-for-3ds-ic-applications",
      "use": "Category-level provenance for temporary-bond carrier-wafer scope and applicability."
    },
    {
      "label": "Thin / dice / SEMI 3D4 - Bonded Wafer Stack Thickness, TTV, Bow, Warp, Sori, and Flatness",
      "url": "https://store-us.semi.org/products/3d00400-semi-3d4-guide-for-metrology-for-measuring-thickness-total-thickness-variation-ttv-bow-warp-sori-and-flatness-of-bonded-wafer-stacks",
      "use": "Category-level provenance for temporary support, thinned-stack thickness, TTV, bow, warp, sori, and flatness evidence."
    },
    {
      "label": "Probe / test / SEMI G78 - Test Method for Comparing Automated Wafer Probe Systems Utilizing Process-Specific Measurements",
      "url": "https://store-us.semi.org/products/g07800-semi-g78-test-method-for-comparing-automated-wafer-probe-systems-utilizing-process-specific-measurements",
      "use": "Category-level provenance for automated wafer-prober accuracy, repeatability, and throughput comparison; the official page identifies this revision as superseded."
    },
    {
      "label": "Panel / RDL / SEMI 3D20 - Specification for Panel Characteristics for Panel Level Packaging Applications",
      "url": "https://store-us.semi.org/products/3d02000-semi-3d20-en-specification-for-panel-characteristics-for-panel-level-packaging-plp-applications",
      "use": "Category-level provenance for panel characteristics and equipment-set interoperability context."
    }
  ]
}