{
  "schema": "semiagora.process-simulation.v1",
  "experiment_id": "SA-PROC-THERM-RTA-ACTIVATION-001",
  "title": "RTA activation and diffusion tradeoff",
  "execution_mode": "precomputed-only",
  "model_boundary": "Educational rapid-thermal-anneal replay using normalized Arrhenius budgets; not a recipe or measured wafer result.",
  "metric_contract": {
    "activation": "Higher activated_fraction_percent means more dopant is electrically useful in the teaching model.",
    "diffusion": "Higher diffusion_length_nm means more junction broadening risk in the teaching model.",
    "sheet_resistance": "Sheet resistance proxy combines activation benefit and diffusion penalty for comparison only."
  },
  "cases": [
    {
      "id": "low_exposure",
      "label": "Low-exposure anneal",
      "profile_c_s": [
        [
          650,
          6
        ],
        [
          875,
          5
        ],
        [
          650,
          6
        ]
      ],
      "teaching_note": "Preserves the shallow profile but leaves a large inactive fraction.",
      "effective_activation_budget_s_at_1000c": 0.54,
      "effective_diffusion_budget_s_at_1000c": 0.15,
      "activated_fraction_percent": 31.05,
      "diffusion_length_nm": 2.4,
      "junction_depth_proxy_nm": 30.88,
      "sheet_resistance_proxy_ohm_sq": 929.0,
      "inactive_fraction_percent": 68.95
    },
    {
      "id": "spike_rta",
      "label": "Spike RTA teaching profile",
      "profile_c_s": [
        [
          650,
          3
        ],
        [
          900,
          2
        ],
        [
          1050,
          2
        ],
        [
          850,
          5
        ]
      ],
      "teaching_note": "Balances activation against diffusion broadening in the simplified replay.",
      "effective_activation_budget_s_at_1000c": 5.01,
      "effective_diffusion_budget_s_at_1000c": 6.99,
      "activated_fraction_percent": 91.71,
      "diffusion_length_nm": 16.52,
      "junction_depth_proxy_nm": 47.82,
      "sheet_resistance_proxy_ohm_sq": 386.8,
      "inactive_fraction_percent": 8.29
    },
    {
      "id": "long_soak",
      "label": "Longer soak teaching profile",
      "profile_c_s": [
        [
          800,
          30
        ],
        [
          1000,
          30
        ],
        [
          800,
          30
        ]
      ],
      "teaching_note": "Improves activation and defect cleanup but broadens the junction proxy.",
      "effective_activation_budget_s_at_1000c": 31.31,
      "effective_diffusion_budget_s_at_1000c": 30.14,
      "activated_fraction_percent": 94.0,
      "diffusion_length_nm": 34.31,
      "junction_depth_proxy_nm": 69.18,
      "sheet_resistance_proxy_ohm_sq": 461.0,
      "inactive_fraction_percent": 6.0
    }
  ],
  "derived_metrics": {
    "best_balanced_case": "spike_rta",
    "low_exposure_activation_percent": 31.05,
    "spike_activation_percent": 91.71,
    "long_soak_junction_depth_proxy_nm": 69.18
  },
  "verification": {
    "case_count": 3,
    "activation_increases_with_budget": true,
    "diffusion_increases_with_budget": true,
    "all_cases_precomputed": true
  },
  "limitations": [
    "No furnace recipe, RTA program, laser scan condition, gas ambient, wafer handling, ramp-rate setpoint, endpoint, or tool-control instruction is provided.",
    "All axes are normalized teaching axes or simplified time-temperature profiles and must not be copied into equipment settings.",
    "The values are synthetic teaching replays, not measured SemiAgora wafer data, qualified metrology, or process release limits.",
    "Real anneal work requires material stack review, contamination controls, calibrated temperature metrology, electrical metrology, safety approval, and tool-specific training."
  ],
  "sources": [
    {
      "label": "MIT OCW 6.152J ion implantation lecture",
      "url": "https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/resources/lecture6/",
      "note": "Public lecture-note page anchoring diffusion, ion implantation, projected range, and implantation damage vocabulary."
    },
    {
      "label": "MIT OCW 6.774 front-end processing",
      "url": "https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/",
      "note": "Public course page covering oxidation, diffusion, ion implantation, epitaxy, and front-end process physics."
    },
    {
      "label": "Optimal control of rapid thermal annealing",
      "url": "https://web.mit.edu/braatzgroup/70_Optimal_control_of_rapid_thermal_annealing_in_a_semiconductor_process.pdf",
      "note": "Open PDF discussing RTA, ultrashallow junctions, TED, sheet-resistance tradeoffs, and temperature trajectory control."
    },
    {
      "label": "COMSOL Rapid Thermal Annealing model",
      "url": "https://www.comsol.com/model/rapid-thermal-annealing-504",
      "note": "Public model page describing RTA as dopant activation and metal-contact interfacial reaction with transient heat transfer."
    }
  ]
}