{
  "schema": "semiagora.process-simulation.v1",
  "experiment_id": "SA-PROC-THERM-SILICIDE-CONTACT-001",
  "title": "Silicide contact anneal window",
  "execution_mode": "precomputed-only",
  "model_boundary": "Educational silicide/contact anneal window replay; not a metal stack recipe, phase diagram, or contact qualification.",
  "cases": [
    {
      "id": "under_reacted",
      "label": "Under-reacted contact",
      "normalized_anneal_index": 0.25,
      "silicide_completion_percent": 38,
      "sheet_resistance_ohm_sq": 18.5,
      "agglomeration_risk": 0.04,
      "phase_note": "Incomplete reaction dominates resistance."
    },
    {
      "id": "target_window",
      "label": "Target teaching window",
      "normalized_anneal_index": 0.58,
      "silicide_completion_percent": 88,
      "sheet_resistance_ohm_sq": 4.4,
      "agglomeration_risk": 0.16,
      "phase_note": "Low-resistance contact region in the teaching replay."
    },
    {
      "id": "over_annealed",
      "label": "Over-annealed contact",
      "normalized_anneal_index": 0.9,
      "silicide_completion_percent": 95,
      "sheet_resistance_ohm_sq": 9.8,
      "agglomeration_risk": 0.72,
      "phase_note": "Agglomeration or morphology risk dominates the non-claim boundary."
    }
  ],
  "derived_metrics": {
    "lowest_resistance_case": "target_window",
    "target_sheet_resistance_ohm_sq": 4.4,
    "over_anneal_agglomeration_risk": 0.72
  },
  "verification": {
    "case_count": 3,
    "minimum_resistance_case_is_target": true,
    "agglomeration_risk_increases": true,
    "all_cases_precomputed": true
  },
  "limitations": [
    "No furnace recipe, RTA program, laser scan condition, gas ambient, wafer handling, ramp-rate setpoint, endpoint, or tool-control instruction is provided.",
    "All axes are normalized teaching axes or simplified time-temperature profiles and must not be copied into equipment settings.",
    "The values are synthetic teaching replays, not measured SemiAgora wafer data, qualified metrology, or process release limits.",
    "Real anneal work requires material stack review, contamination controls, calibrated temperature metrology, electrical metrology, safety approval, and tool-specific training.",
    "Specific metals, phase transitions, line width effects, silicon consumption, stress, capping layers, and contact-chain metrology are not modeled."
  ],
  "sources": [
    {
      "label": "MIT OCW 6.774 silicides and contacts",
      "url": "https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/resources/mit6_774f04_lec22_mp4/",
      "note": "Public lecture page anchoring silicide/contact vocabulary and front-end contact formation context."
    },
    {
      "label": "COMSOL Rapid Thermal Annealing model",
      "url": "https://www.comsol.com/model/rapid-thermal-annealing-504",
      "note": "Public model page describing RTA as dopant activation and metal-contact interfacial reaction with transient heat transfer."
    },
    {
      "label": "NIST Semiconductor Electronics Division facility summary",
      "url": "https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir6430.pdf",
      "note": "Public NIST report listing microfabrication facility capabilities including furnaces, thermal oxidation, CVD, and annealing."
    }
  ]
}