# Thermal Processing and Anneal Model Card

SemiAgora thermal-processing simulations in this packet are educational replays. They teach how anneal claims should carry activation, diffusion, defect recovery, thermal budget, contact reaction, measurement needs, limits, and source anchors before anyone treats a number as reusable evidence.

## Included Simulations

- `SA-PROC-THERM-RTA-ACTIVATION-001`: RTA activation and diffusion tradeoff.
- `SA-PROC-THERM-BUDGET-COMPARE-001`: spike, furnace, and millisecond anneal thermal-budget comparison.
- `SA-PROC-THERM-DAMAGE-RECOVERY-001`: post-implant damage recovery and transient-enhanced-diffusion caution.
- `SA-PROC-THERM-SILICIDE-CONTACT-001`: silicide/contact anneal window replay.
- `process_thermal_processing_models.py`: compact reference script for the public teaching calculations.

## Public Boundary

These files do not contain qualified recipes, furnace programs, RTA ramp setpoints, laser scan settings, gas ambients, endpoint rules, tool credentials, chamber histories, facility procedures, PDK content, NDA material, private wafer data, or production metrology. They should not be used to process wafers, tune equipment, release wafers, qualify contacts, or claim measured SemiAgora silicon.

## Source Spine

- MIT OCW 6.152J ion implantation lecture: https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/resources/lecture6/
- MIT OCW 6.774 front-end processing: https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/
- MIT OCW 6.774 TED lecture page: https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/resources/mit6_774f04_lec15_mp4/
- MIT OCW 6.774 silicides and contacts: https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/resources/mit6_774f04_lec22_mp4/
- Optimal control of rapid thermal annealing: https://web.mit.edu/braatzgroup/70_Optimal_control_of_rapid_thermal_annealing_in_a_semiconductor_process.pdf
- COMSOL Rapid Thermal Annealing model: https://www.comsol.com/model/rapid-thermal-annealing-504
- NIST laser annealed arsenic ultrashallow junctions: https://www.nist.gov/publications/deactivation-sub-melt-laser-annealed-arsenic-ultra-shallow-junctions-silicon-during
- NIST Semiconductor Electronics Division facility summary: https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir6430.pdf

## Recommended Next Data

The next useful materials are rights-clean measured summaries: sheet-resistance after implant/anneal, SIMS depth profiles before and after anneal, Hall activation data, junction leakage after thermal splits, TEM or defect-density summaries, silicide contact-chain or Kelvin resistance, and temperature-uniformity metrology. Recipe details can stay private while evidence quality improves.