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"doe-fes-plasma-semiconductor-2023", "label": "Plasma Science for Microelectronics Nanofabrication Workshop Report", "publisher": "U.S. Department of Energy, Office of Science, Fusion Energy Sciences", "url": "https://science.osti.gov/-/media/fes/pdf/2023/DOE_FES_PlasmaScience_Semiconductors_Final.pdf", "sourceType": "official-government-workshop-report", "rightsStatus": "link-only; DOE and report notices apply", "use": "Plasma-surface interaction complexity, multiple incident species, diagnostics, damage, uncertainty, and model-validation responsibility.", "numericUse": "none", "artifactUse": "no body text, figure, table, equation, priority wording, value, or roadmap graphic copied" }, { "id": "coburn-winters-1979", "label": "Ion- and electron-assisted gas-surface chemistry - An important effect in plasma etching", "publisher": "Journal of Applied Physics / AIP Publishing", "url": "https://doi.org/10.1063/1.326355", "sourceType": "primary-peer-reviewed-paper", "rightsStatus": 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"primary-peer-reviewed-model-paper", "rightsStatus": "link-only; publisher rights apply", "use": "Feature-scale transport, surface coverage, physical removal, chemical removal, ion-enhanced removal, mask, and experiment-comparison ownership.", "numericUse": "none", "artifactUse": "no model equation, coefficient, geometry, particle distribution, code, result, or figure copied" }, { "id": "plasma-roadmap-surface-2017", "label": "2017 Plasma Roadmap - Plasma-surface interactions for material fabrication", "publisher": "Journal of Physics D / OSTI full-text record", "url": "https://doi.org/10.1088/1361-6463/aa76f5", "sourceType": "primary-open-review-roadmap", "rightsStatus": "link-only; journal and OSTI record notices apply", "use": "Combined ions, electrons, radicals, excited neutrals, and photons; atomic-scale control and plasma-surface diagnostic challenges.", "numericUse": "none", "artifactUse": "no section text, figure, table, equation, roadmap ranking, or value copied" }, { "id": "nist-plasma-process-metrology", "label": "Plasma Process Metrology", "publisher": "National Institute of Standards and Technology", "url": "https://www.nist.gov/programs-projects/plasma-process-metrology", "sourceType": "official-government-program-page", "rightsStatus": "link-only", "use": "Measurement, model validation, plasma-property characterization, endpoint, and uncertainty ownership.", "numericUse": "none", "artifactUse": "no measurement, model, recommendation, value, or image copied" }, { "id": "nist-ion-energy-current-monitor", "label": "Real-Time, Noninvasive Monitoring of Ion Energy and Ion Current at a Wafer Surface During Plasma Etching", "publisher": "National Institute of Standards and Technology", "url": "https://www.nist.gov/publications/real-time-noninvasive-monitoring-ion-energy-and-ion-current-wafer-surface-during-plasma", "sourceType": "primary-government-publication-record", "rightsStatus": "link-only; journal and NIST notices apply", "use": "Ion-energy-distribution and ion-current measurement ownership and uncertainty boundaries.", "numericUse": "none", "artifactUse": "no apparatus, trace, process perturbation, value, conclusion wording, or method copied" }, { "id": "nist-etch-endpoint-signals", "label": "Origin of Electrical Signals for Plasma Etching Endpoint Detection", "publisher": "National Institute of Standards and Technology", "url": "https://www.nist.gov/publications/origin-electrical-signals-plasma-etching-endpoint-detection", "sourceType": "primary-government-publication-record", "rightsStatus": "link-only; journal and NIST notices apply", "use": "Endpoint-signal interpretation, simultaneous measurement, and validation ownership.", "numericUse": "none", "artifactUse": "no signal trace, endpoint threshold, apparatus, equation, value, or action copied" }, { "id": "iue-pyka-rie", "label": "Reactive Ion Etching", "publisher": "TU Wien Institute for Microelectronics", "url": "https://www.iue.tuwien.ac.at/phd/pyka/node61.html", "sourceType": "official-university-dissertation-section", "rightsStatus": "link-only; university and author notices apply", "use": "Distinct neutral and ion directionality plus chemical, physical, and enhancement vocabulary.", "numericUse": "none", "artifactUse": "no equation, distribution, coefficient, image, implementation, or result copied" }, { "id": "iue-ertl-nonlinear-reactions", "label": "Non-Linear Surface Reactions", "publisher": "TU Wien Institute for Microelectronics", "url": "https://www.iue.tuwien.ac.at/phd/ertl/node23.html", "sourceType": "official-university-dissertation-section", "rightsStatus": "link-only; university and author notices apply", "use": "Surface coverage, chemical, physical, ion-enhanced, adsorption, and nonlinear reaction ownership.", "numericUse": "none", "artifactUse": "no equation, coefficient, diagram, implementation, or value copied" }, { "id": "iue-sheikholeslami-elsa", "label": "Application of ELSA to the Simulation of Plasma Etching", "publisher": "TU Wien Institute for Microelectronics", "url": "https://www.iue.tuwien.ac.at/phd/sheikholeslami/node13.html", "sourceType": "official-university-dissertation-section", "rightsStatus": "link-only; university and author notices apply", "use": "Ion-neutral synergy, feature-size dependence, transport limits, and profile-model boundaries.", "numericUse": "none", "artifactUse": "no equation, coefficient, geometry, algorithm, result, or figure copied" }, { "id": "viennaps-documentation", "label": "ViennaPS Documentation", "publisher": "ViennaTools", "url": "https://viennatools.github.io/ViennaPS/", "sourceType": "official-open-software-documentation", "rightsStatus": "link-only; project documentation and repository licenses apply", "use": "Open feature-scale process-simulation scope, dimensional execution, transport, surface, and geometry responsibilities.", "numericUse": "none", "artifactUse": "no source code, example, geometry, screenshot, parameter, result, or documentation body copied" }, { "id": "viennaps-sf6o2-model", "label": "SF6O2 Etching - ViennaPS Documentation", "publisher": "ViennaTools", "url": "https://viennatools.github.io/ViennaPS/models/prebuilt/SF6O2Etching.html", "sourceType": "official-open-software-model-documentation", "rightsStatus": "link-only; project documentation, upstream paper, and repository licenses apply", "use": "Coverage, chemical removal, sputtering, ion-enhanced removal, mask, transport, and calibration responsibility vocabulary.", "numericUse": "none", "artifactUse": "no equation, default parameter, code, geometry, unit, result, or screenshot copied" }, { "id": "viennaps-paper-2025", "label": "ViennaPS: A flexible framework for semiconductor process simulation", "publisher": "SoftwareX / Elsevier", "url": "https://doi.org/10.1016/j.softx.2025.102453", "sourceType": "primary-open-software-paper", "rightsStatus": "link-only; publication and repository licenses apply", "use": "Framework scope, reproducibility, model implementation, and validation responsibility.", "numericUse": "none", "artifactUse": "no paper body, code, equation, benchmark, figure, or result copied" }, { "id": "viennaps-repository", "label": "ViennaPS Repository", "publisher": "ViennaTools / GitHub", "url": "https://github.com/ViennaTools/ViennaPS", "sourceType": "official-open-software-repository", "rightsStatus": "link-only; repository license applies; versions 4.3.0 and later declare GNU GPL v3", "use": "Version, source ownership, dependency, and isolated-reproduction boundary.", "numericUse": "none", "artifactUse": "no code, test, example, dependency, geometry, parameter, or output copied" }, { "id": "viennaps-releases", "label": "ViennaPS Releases", "publisher": "ViennaTools / GitHub", "url": "https://github.com/ViennaTools/ViennaPS/releases", "sourceType": "official-open-software-release-record", "rightsStatus": "link-only; repository license applies; current review anchor is 4.6.2 and the 4.3.0 license change is explicit", "use": "Exact-version and license-change tracking for any future isolated reproduction.", "numericUse": "none", "artifactUse": "no release archive, binary, code, changelog body, example, or output copied" }, { "id": "lam-etch-taxonomy", "label": "Etch", "publisher": "Lam Research", "url": "https://www.lamresearch.com/products/our-processes/etch/", "sourceType": "official-vendor-taxonomy-page", "rightsStatus": "link-only; vendor rights apply", "use": "Conductor etch, dielectric etch, reactive-ion etch, profile, selectivity, and application-family taxonomy only.", "numericUse": "none", "artifactUse": "no product claim, specification, process, image, ranking, result, or wording copied" }, { "id": "oxford-rie-taxonomy", "label": "Reactive Ion Etching", "publisher": "Oxford Instruments Plasma Technology", "url": "https://plasma.oxinst.com/technologies/rie", "sourceType": "official-vendor-taxonomy-page", "rightsStatus": "link-only; vendor rights apply", "use": "RIE, chemical, ion-induced, physical, anisotropic, endpoint, material-family, and equipment-family taxonomy only.", "numericUse": "none", "artifactUse": "no product specification, condition, process, recipe, image, ranking, result, or wording copied" } ], "claimNodes": [ { "node_id": "rie-mechanism-separation", "topic": "Reactive-ion etching must keep chemical removal, physical removal, and ion-assisted surface chemistry distinct before combining them.", "source_ids": [ "coburn-winters-1979", "donnelly-kornblit-2013", "iue-pyka-rie", "iue-ertl-nonlinear-reactions" ], "boundary": "The packet uses original normalized components and does not reproduce any source equation, coefficient, yield, material result, or rate." }, { "node_id": "rie-ion-neutral-synergy", "topic": "Ion and neutral contributions may interact nonlinearly, so a synergy term cannot be inferred from either contribution alone.", "source_ids": [ "coburn-winters-1979", "iue-ertl-nonlinear-reactions", "iue-sheikholeslami-elsa", "doe-fes-plasma-semiconductor-2023" ], "boundary": "The synergy proxy is an original teaching relation and is not an etch-rate law or fitted surface-reaction model." }, { "node_id": "rie-surface-coverage-passivation", "topic": "Surface coverage and passivation compete with reactive-site availability and ion-assisted removal.", "source_ids": [ "donnelly-kornblit-2013", "belen-feature-scale-2004", "iue-ertl-nonlinear-reactions", "viennaps-sf6o2-model" ], "boundary": "Passivation states are ordinal; there is no chemical identity, coverage fraction, sticking probability, film thickness, or source parameter." }, { "node_id": "rie-directionality-profile", "topic": "Ion directionality, neutral angular spread, surface response, and mask context jointly affect profile tendencies.", "source_ids": [ "iue-pyka-rie", "belen-feature-scale-2004", "donnelly-kornblit-2013", "plasma-roadmap-surface-2017" ], "boundary": "Focused-like and broad-like labels do not encode an angle distribution, sheath solution, sidewall angle, CD, depth, or geometry." }, { "node_id": "rie-feature-transport", "topic": "Feature access and transport constraints can decouple incident conditions from local surface response.", "source_ids": [ "belen-feature-scale-2004", "iue-sheikholeslami-elsa", "viennaps-documentation", "viennaps-sf6o2-model" ], "boundary": "The transport-burden proxy has no aspect ratio, dimension, ray trace, particle trajectory, or topography solution." }, { "node_id": "rie-material-family-taxonomy", "topic": "Dielectric-like and conductor-like etch contexts are separate application families with different integration concerns.", "source_ids": [ "lam-etch-taxonomy", "oxford-rie-taxonomy", "donnelly-kornblit-2013" ], "boundary": "The labels are teaching archetypes only and do not identify a film, stack, gas family, chamber, vendor product, or qualified process." }, { "node_id": "rie-mask-selectivity", "topic": "Target removal, mask erosion, stop-layer behavior, and profile outcomes require separate evidence before selectivity can be claimed.", "source_ids": [ "belen-feature-scale-2004", "viennaps-sf6o2-model", "donnelly-kornblit-2013", "doe-fes-plasma-semiconductor-2023" ], "boundary": "Selectivity-margin proxy is not a physical ratio; the integer mask ledger is bookkeeping and cannot predict mask survival." }, { "node_id": "rie-damage-burden", "topic": "Ion drive and plasma-surface interactions can create damage risks that require independent wafer and device evidence.", "source_ids": [ "doe-fes-plasma-semiconductor-2023", "plasma-roadmap-surface-2017", "nist-ion-energy-current-monitor", "donnelly-kornblit-2013" ], "boundary": "Damage burden is a normalized review flag, not penetration depth, defect density, charging, electrical degradation, or reliability prediction." }, { "node_id": "rie-plasma-metrology", "topic": "Ion-energy, ion-current, species, and surface claims require owned diagnostics, calibration context, uncertainty, and model comparison.", "source_ids": [ "nist-plasma-process-metrology", "nist-ion-energy-current-monitor", "doe-fes-plasma-semiconductor-2023" ], "boundary": "No generated axis is a measured plasma quantity or calibrated proxy." }, { "node_id": "rie-endpoint-evidence", "topic": "Endpoint interpretation must connect a signal to surface-state change and independent metrology before a stop decision is justified.", "source_ids": [ "nist-plasma-process-metrology", "nist-etch-endpoint-signals", "doe-fes-plasma-semiconductor-2023" ], "boundary": "Ordered replay states are not process time, endpoint signals, endpoint thresholds, or equipment stop commands." }, { "node_id": "rie-model-validation", "topic": "A process model requires declared geometry, species, surface parameters, measurements, uncertainty, and independent comparison to support predictive use.", "source_ids": [ "nist-plasma-process-metrology", "doe-fes-plasma-semiconductor-2023", "belen-feature-scale-2004", "viennaps-paper-2025" ], "boundary": "The SemiAgora packet is a deterministic teaching map with no predictive-accuracy, calibration, or production-fitness claim." }, { "node_id": "rie-open-reproduction-boundary", "topic": "Any ViennaPS reproduction must pin version, license, dependencies, geometry, parameters, seed or determinism posture, and validation evidence in isolated scratch.", "source_ids": [ "viennaps-documentation", "viennaps-paper-2025", "viennaps-repository", "viennaps-releases" ], "boundary": "Version 4.6.2 is a link-only candidate; GPL-3.0 code, defaults, examples, geometry, and output may not enter this original packet without a separate distribution decision." }, { "node_id": "rie-handoff-replacement-evidence", "topic": "Upstream chamber labels and downstream feature labels may cross packet boundaries only as categorical teaching metadata behind a replacement-evidence gate.", "source_ids": [ "doe-fes-plasma-semiconductor-2023", "nist-plasma-process-metrology", "nist-ion-energy-current-monitor", "belen-feature-scale-2004" ], "boundary": "No handoff carries physical units, recipes, equipment actions, wafer disposition, qualification, or signoff." } ], "hardBoundary": "No source body, figure, table, equation, coefficient, geometry, gas identity, material recipe, operating value, measurement trace, vendor result, source code, named-tool output, or publication-derived numeric value enters the generated SemiAgora packet.", "numericUse": "none", "artifactUse": "No source body, equation, coefficient, code, geometry, parameter, measurement, or output is embedded." }, "contractArtifacts": { "state": { "file": "rie-state-contract-v1.json", "sha256": "79658E9B1222EC45C0BACF0B08DA5D579AC05A1CA6AD92A68F47D8469B1EFA91" }, "metric": { "file": "rie-metric-contract-v1.json", "sha256": "B43ED2D75B7A505ACEA16B90E886549970904C5FB8E19331ED42E135ACB7D86E" }, "modelCard": { "file": "rie-model-card-v1.md", "sha256": "381205960FFA4D3C25529D7098B885DB5EBD3781FC258320083AAC2897800A5C" }, "sourceSpine": { "file": "rie-source-spine-v1.json", "sha256": "CCD88B34E2DD1EFDD704B097E02BF3E780E51AF0935CA8D476800BFD100FA853" } }, "mechanismRegimes": [ "passivation-limited", "ion-limited", "neutral-limited", "synergy-dominant", "chemical-weighted", "physical-weighted" ], "upstreamBridges": [ { "sourceExperimentId": "SA-EQP-VAC-GAS-009", "allowedFields": [ "upstream_vacuum_state_band", "upstream_bridge_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-EQP-PLASMA-CCP-ICP-008", "allowedFields": [ "upstream_plasma_drive_band", "upstream_plasma_species_balance", "upstream_plasma_stability_band", "upstream_bridge_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false } ], "downstreamBridge": { "targetExperimentId": "SA-PROC-FEATURE-PMC-007", "allowedFields": [ "feature_particle_mix_band", "feature_directionality_band", "feature_passivation_band", "feature_profile_handoff_gate" ], "physicalUnitsAllowed": false, "automaticRecipeHandoffAllowed": false, "automaticGeometryHandoffAllowed": false, "automaticEquipmentActionAllowed": false }, "replacementEvidenceRequirements": [ "accountable run identifier and ownership", "owned chamber and feature geometry with revision", "calibrated ion energy distribution or validated equivalent proxy with uncertainty", "calibrated ion current or flux evidence with uncertainty", "owned neutral or radical density or flux evidence with uncertainty", "surface composition or coverage evidence", "target, mask, and stop-layer removal measurements", "profile CD, depth, and sidewall metrology with uncertainty", "damage or charging measurements appropriate to the stack", "endpoint signal tied to independent post-process metrology", "material stack, incoming state, chamber history, and tool state", "independent model-to-measurement review and approval" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless teaching data only; no physical etch, chemistry, recipe, equipment control, calibration, qualification, production, or named-tool claim." }