{
  "schema": "semiagora.rie-source-spine.v1",
  "version": "2026-08-28-rie-v1",
  "experimentId": "SA-PROC-ETCH-RIE-010",
  "generatedAt": "2026-08-28T00:00:00.000Z",
  "sources": [
    {
      "id": "doe-fes-plasma-semiconductor-2023",
      "label": "Plasma Science for Microelectronics Nanofabrication Workshop Report",
      "publisher": "U.S. Department of Energy, Office of Science, Fusion Energy Sciences",
      "url": "https://science.osti.gov/-/media/fes/pdf/2023/DOE_FES_PlasmaScience_Semiconductors_Final.pdf",
      "sourceType": "official-government-workshop-report",
      "rightsStatus": "link-only; DOE and report notices apply",
      "use": "Plasma-surface interaction complexity, multiple incident species, diagnostics, damage, uncertainty, and model-validation responsibility.",
      "numericUse": "none",
      "artifactUse": "no body text, figure, table, equation, priority wording, value, or roadmap graphic copied"
    },
    {
      "id": "coburn-winters-1979",
      "label": "Ion- and electron-assisted gas-surface chemistry - An important effect in plasma etching",
      "publisher": "Journal of Applied Physics / AIP Publishing",
      "url": "https://doi.org/10.1063/1.326355",
      "sourceType": "primary-peer-reviewed-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Historical ownership of ion-assisted gas-surface synergy vocabulary.",
      "numericUse": "none",
      "artifactUse": "no experiment, curve, value, equation, figure, or material result copied"
    },
    {
      "id": "donnelly-kornblit-2013",
      "label": "Plasma etching: Yesterday, today, and tomorrow",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.4819316",
      "sourceType": "primary-peer-reviewed-review",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Plasma-etch mechanism, selectivity, profile, damage, surface-chemistry, and scaling vocabulary.",
      "numericUse": "none",
      "artifactUse": "no review text, figure, table, equation, value, or process example copied"
    },
    {
      "id": "belen-feature-scale-2004",
      "label": "Feature-scale model of Si etching in SF6 plasma and comparison with experiments",
      "publisher": "Journal of Vacuum Science & Technology A / AVS",
      "url": "https://doi.org/10.1116/1.1830495",
      "sourceType": "primary-peer-reviewed-model-paper",
      "rightsStatus": "link-only; publisher rights apply",
      "use": "Feature-scale transport, surface coverage, physical removal, chemical removal, ion-enhanced removal, mask, and experiment-comparison ownership.",
      "numericUse": "none",
      "artifactUse": "no model equation, coefficient, geometry, particle distribution, code, result, or figure copied"
    },
    {
      "id": "plasma-roadmap-surface-2017",
      "label": "2017 Plasma Roadmap - Plasma-surface interactions for material fabrication",
      "publisher": "Journal of Physics D / OSTI full-text record",
      "url": "https://doi.org/10.1088/1361-6463/aa76f5",
      "sourceType": "primary-open-review-roadmap",
      "rightsStatus": "link-only; journal and OSTI record notices apply",
      "use": "Combined ions, electrons, radicals, excited neutrals, and photons; atomic-scale control and plasma-surface diagnostic challenges.",
      "numericUse": "none",
      "artifactUse": "no section text, figure, table, equation, roadmap ranking, or value copied"
    },
    {
      "id": "nist-plasma-process-metrology",
      "label": "Plasma Process Metrology",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/programs-projects/plasma-process-metrology",
      "sourceType": "official-government-program-page",
      "rightsStatus": "link-only",
      "use": "Measurement, model validation, plasma-property characterization, endpoint, and uncertainty ownership.",
      "numericUse": "none",
      "artifactUse": "no measurement, model, recommendation, value, or image copied"
    },
    {
      "id": "nist-ion-energy-current-monitor",
      "label": "Real-Time, Noninvasive Monitoring of Ion Energy and Ion Current at a Wafer Surface During Plasma Etching",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/real-time-noninvasive-monitoring-ion-energy-and-ion-current-wafer-surface-during-plasma",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only; journal and NIST notices apply",
      "use": "Ion-energy-distribution and ion-current measurement ownership and uncertainty boundaries.",
      "numericUse": "none",
      "artifactUse": "no apparatus, trace, process perturbation, value, conclusion wording, or method copied"
    },
    {
      "id": "nist-etch-endpoint-signals",
      "label": "Origin of Electrical Signals for Plasma Etching Endpoint Detection",
      "publisher": "National Institute of Standards and Technology",
      "url": "https://www.nist.gov/publications/origin-electrical-signals-plasma-etching-endpoint-detection",
      "sourceType": "primary-government-publication-record",
      "rightsStatus": "link-only; journal and NIST notices apply",
      "use": "Endpoint-signal interpretation, simultaneous measurement, and validation ownership.",
      "numericUse": "none",
      "artifactUse": "no signal trace, endpoint threshold, apparatus, equation, value, or action copied"
    },
    {
      "id": "iue-pyka-rie",
      "label": "Reactive Ion Etching",
      "publisher": "TU Wien Institute for Microelectronics",
      "url": "https://www.iue.tuwien.ac.at/phd/pyka/node61.html",
      "sourceType": "official-university-dissertation-section",
      "rightsStatus": "link-only; university and author notices apply",
      "use": "Distinct neutral and ion directionality plus chemical, physical, and enhancement vocabulary.",
      "numericUse": "none",
      "artifactUse": "no equation, distribution, coefficient, image, implementation, or result copied"
    },
    {
      "id": "iue-ertl-nonlinear-reactions",
      "label": "Non-Linear Surface Reactions",
      "publisher": "TU Wien Institute for Microelectronics",
      "url": "https://www.iue.tuwien.ac.at/phd/ertl/node23.html",
      "sourceType": "official-university-dissertation-section",
      "rightsStatus": "link-only; university and author notices apply",
      "use": "Surface coverage, chemical, physical, ion-enhanced, adsorption, and nonlinear reaction ownership.",
      "numericUse": "none",
      "artifactUse": "no equation, coefficient, diagram, implementation, or value copied"
    },
    {
      "id": "iue-sheikholeslami-elsa",
      "label": "Application of ELSA to the Simulation of Plasma Etching",
      "publisher": "TU Wien Institute for Microelectronics",
      "url": "https://www.iue.tuwien.ac.at/phd/sheikholeslami/node13.html",
      "sourceType": "official-university-dissertation-section",
      "rightsStatus": "link-only; university and author notices apply",
      "use": "Ion-neutral synergy, feature-size dependence, transport limits, and profile-model boundaries.",
      "numericUse": "none",
      "artifactUse": "no equation, coefficient, geometry, algorithm, result, or figure copied"
    },
    {
      "id": "viennaps-documentation",
      "label": "ViennaPS Documentation",
      "publisher": "ViennaTools",
      "url": "https://viennatools.github.io/ViennaPS/",
      "sourceType": "official-open-software-documentation",
      "rightsStatus": "link-only; project documentation and repository licenses apply",
      "use": "Open feature-scale process-simulation scope, dimensional execution, transport, surface, and geometry responsibilities.",
      "numericUse": "none",
      "artifactUse": "no source code, example, geometry, screenshot, parameter, result, or documentation body copied"
    },
    {
      "id": "viennaps-sf6o2-model",
      "label": "SF6O2 Etching - ViennaPS Documentation",
      "publisher": "ViennaTools",
      "url": "https://viennatools.github.io/ViennaPS/models/prebuilt/SF6O2Etching.html",
      "sourceType": "official-open-software-model-documentation",
      "rightsStatus": "link-only; project documentation, upstream paper, and repository licenses apply",
      "use": "Coverage, chemical removal, sputtering, ion-enhanced removal, mask, transport, and calibration responsibility vocabulary.",
      "numericUse": "none",
      "artifactUse": "no equation, default parameter, code, geometry, unit, result, or screenshot copied"
    },
    {
      "id": "viennaps-paper-2025",
      "label": "ViennaPS: A flexible framework for semiconductor process simulation",
      "publisher": "SoftwareX / Elsevier",
      "url": "https://doi.org/10.1016/j.softx.2025.102453",
      "sourceType": "primary-open-software-paper",
      "rightsStatus": "link-only; publication and repository licenses apply",
      "use": "Framework scope, reproducibility, model implementation, and validation responsibility.",
      "numericUse": "none",
      "artifactUse": "no paper body, code, equation, benchmark, figure, or result copied"
    },
    {
      "id": "viennaps-repository",
      "label": "ViennaPS Repository",
      "publisher": "ViennaTools / GitHub",
      "url": "https://github.com/ViennaTools/ViennaPS",
      "sourceType": "official-open-software-repository",
      "rightsStatus": "link-only; repository license applies; versions 4.3.0 and later declare GNU GPL v3",
      "use": "Version, source ownership, dependency, and isolated-reproduction boundary.",
      "numericUse": "none",
      "artifactUse": "no code, test, example, dependency, geometry, parameter, or output copied"
    },
    {
      "id": "viennaps-releases",
      "label": "ViennaPS Releases",
      "publisher": "ViennaTools / GitHub",
      "url": "https://github.com/ViennaTools/ViennaPS/releases",
      "sourceType": "official-open-software-release-record",
      "rightsStatus": "link-only; repository license applies; current review anchor is 4.6.2 and the 4.3.0 license change is explicit",
      "use": "Exact-version and license-change tracking for any future isolated reproduction.",
      "numericUse": "none",
      "artifactUse": "no release archive, binary, code, changelog body, example, or output copied"
    },
    {
      "id": "lam-etch-taxonomy",
      "label": "Etch",
      "publisher": "Lam Research",
      "url": "https://www.lamresearch.com/products/our-processes/etch/",
      "sourceType": "official-vendor-taxonomy-page",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "Conductor etch, dielectric etch, reactive-ion etch, profile, selectivity, and application-family taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no product claim, specification, process, image, ranking, result, or wording copied"
    },
    {
      "id": "oxford-rie-taxonomy",
      "label": "Reactive Ion Etching",
      "publisher": "Oxford Instruments Plasma Technology",
      "url": "https://plasma.oxinst.com/technologies/rie",
      "sourceType": "official-vendor-taxonomy-page",
      "rightsStatus": "link-only; vendor rights apply",
      "use": "RIE, chemical, ion-induced, physical, anisotropic, endpoint, material-family, and equipment-family taxonomy only.",
      "numericUse": "none",
      "artifactUse": "no product specification, condition, process, recipe, image, ranking, result, or wording copied"
    }
  ],
  "claimNodes": [
    {
      "node_id": "rie-mechanism-separation",
      "topic": "Reactive-ion etching must keep chemical removal, physical removal, and ion-assisted surface chemistry distinct before combining them.",
      "source_ids": [
        "coburn-winters-1979",
        "donnelly-kornblit-2013",
        "iue-pyka-rie",
        "iue-ertl-nonlinear-reactions"
      ],
      "boundary": "The packet uses original normalized components and does not reproduce any source equation, coefficient, yield, material result, or rate."
    },
    {
      "node_id": "rie-ion-neutral-synergy",
      "topic": "Ion and neutral contributions may interact nonlinearly, so a synergy term cannot be inferred from either contribution alone.",
      "source_ids": [
        "coburn-winters-1979",
        "iue-ertl-nonlinear-reactions",
        "iue-sheikholeslami-elsa",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "The synergy proxy is an original teaching relation and is not an etch-rate law or fitted surface-reaction model."
    },
    {
      "node_id": "rie-surface-coverage-passivation",
      "topic": "Surface coverage and passivation compete with reactive-site availability and ion-assisted removal.",
      "source_ids": [
        "donnelly-kornblit-2013",
        "belen-feature-scale-2004",
        "iue-ertl-nonlinear-reactions",
        "viennaps-sf6o2-model"
      ],
      "boundary": "Passivation states are ordinal; there is no chemical identity, coverage fraction, sticking probability, film thickness, or source parameter."
    },
    {
      "node_id": "rie-directionality-profile",
      "topic": "Ion directionality, neutral angular spread, surface response, and mask context jointly affect profile tendencies.",
      "source_ids": [
        "iue-pyka-rie",
        "belen-feature-scale-2004",
        "donnelly-kornblit-2013",
        "plasma-roadmap-surface-2017"
      ],
      "boundary": "Focused-like and broad-like labels do not encode an angle distribution, sheath solution, sidewall angle, CD, depth, or geometry."
    },
    {
      "node_id": "rie-feature-transport",
      "topic": "Feature access and transport constraints can decouple incident conditions from local surface response.",
      "source_ids": [
        "belen-feature-scale-2004",
        "iue-sheikholeslami-elsa",
        "viennaps-documentation",
        "viennaps-sf6o2-model"
      ],
      "boundary": "The transport-burden proxy has no aspect ratio, dimension, ray trace, particle trajectory, or topography solution."
    },
    {
      "node_id": "rie-material-family-taxonomy",
      "topic": "Dielectric-like and conductor-like etch contexts are separate application families with different integration concerns.",
      "source_ids": [
        "lam-etch-taxonomy",
        "oxford-rie-taxonomy",
        "donnelly-kornblit-2013"
      ],
      "boundary": "The labels are teaching archetypes only and do not identify a film, stack, gas family, chamber, vendor product, or qualified process."
    },
    {
      "node_id": "rie-mask-selectivity",
      "topic": "Target removal, mask erosion, stop-layer behavior, and profile outcomes require separate evidence before selectivity can be claimed.",
      "source_ids": [
        "belen-feature-scale-2004",
        "viennaps-sf6o2-model",
        "donnelly-kornblit-2013",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "Selectivity-margin proxy is not a physical ratio; the integer mask ledger is bookkeeping and cannot predict mask survival."
    },
    {
      "node_id": "rie-damage-burden",
      "topic": "Ion drive and plasma-surface interactions can create damage risks that require independent wafer and device evidence.",
      "source_ids": [
        "doe-fes-plasma-semiconductor-2023",
        "plasma-roadmap-surface-2017",
        "nist-ion-energy-current-monitor",
        "donnelly-kornblit-2013"
      ],
      "boundary": "Damage burden is a normalized review flag, not penetration depth, defect density, charging, electrical degradation, or reliability prediction."
    },
    {
      "node_id": "rie-plasma-metrology",
      "topic": "Ion-energy, ion-current, species, and surface claims require owned diagnostics, calibration context, uncertainty, and model comparison.",
      "source_ids": [
        "nist-plasma-process-metrology",
        "nist-ion-energy-current-monitor",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "No generated axis is a measured plasma quantity or calibrated proxy."
    },
    {
      "node_id": "rie-endpoint-evidence",
      "topic": "Endpoint interpretation must connect a signal to surface-state change and independent metrology before a stop decision is justified.",
      "source_ids": [
        "nist-plasma-process-metrology",
        "nist-etch-endpoint-signals",
        "doe-fes-plasma-semiconductor-2023"
      ],
      "boundary": "Ordered replay states are not process time, endpoint signals, endpoint thresholds, or equipment stop commands."
    },
    {
      "node_id": "rie-model-validation",
      "topic": "A process model requires declared geometry, species, surface parameters, measurements, uncertainty, and independent comparison to support predictive use.",
      "source_ids": [
        "nist-plasma-process-metrology",
        "doe-fes-plasma-semiconductor-2023",
        "belen-feature-scale-2004",
        "viennaps-paper-2025"
      ],
      "boundary": "The SemiAgora packet is a deterministic teaching map with no predictive-accuracy, calibration, or production-fitness claim."
    },
    {
      "node_id": "rie-open-reproduction-boundary",
      "topic": "Any ViennaPS reproduction must pin version, license, dependencies, geometry, parameters, seed or determinism posture, and validation evidence in isolated scratch.",
      "source_ids": [
        "viennaps-documentation",
        "viennaps-paper-2025",
        "viennaps-repository",
        "viennaps-releases"
      ],
      "boundary": "Version 4.6.2 is a link-only candidate; GPL-3.0 code, defaults, examples, geometry, and output may not enter this original packet without a separate distribution decision."
    },
    {
      "node_id": "rie-handoff-replacement-evidence",
      "topic": "Upstream chamber labels and downstream feature labels may cross packet boundaries only as categorical teaching metadata behind a replacement-evidence gate.",
      "source_ids": [
        "doe-fes-plasma-semiconductor-2023",
        "nist-plasma-process-metrology",
        "nist-ion-energy-current-monitor",
        "belen-feature-scale-2004"
      ],
      "boundary": "No handoff carries physical units, recipes, equipment actions, wafer disposition, qualification, or signoff."
    }
  ],
  "hardBoundary": "No source body, figure, table, equation, coefficient, geometry, gas identity, material recipe, operating value, measurement trace, vendor result, source code, named-tool output, or publication-derived numeric value enters the generated SemiAgora packet.",
  "numericUse": "none",
  "artifactUse": "No source body, equation, coefficient, code, geometry, parameter, measurement, or output is embedded."
}