{ "schema": "semiagora.knowledge-sim-result.v1", "experimentId": "KNOWLEDGE_SIM_SPRINT_2026-08-14", "generatedAtKst": "2026-08-14", "sections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "boundary": [ "precomputed educational data only", "no live solver or server-side execution", "no proprietary PDK, foundry model deck, measured company data, or process recipe", "no equipment operation instructions or production qualification claims", "external literature and repositories are cited as source spines, not copied" ], "simulationId": "SA-DEV-STRESS-001", "slug": "sd-stressor-strain-mobility-risk", "title": "Source/drain stressor strain, mobility, and deformation-risk replay", "track": "Device Engineering / FinFET, GAA, CFET", "lessonRoute": "/learn/advanced-device-architecture", "simulationRoute": "/simulations/sd-stressor-strain-mobility-risk", "promotionPriority": "P0", "modelType": "toy stress-to-mobility and integration-risk replay", "sourceLinks": [ "https://pmc.ncbi.nlm.nih.gov/articles/PMC10058282/", "https://pubs.aip.org/aip/adv/article/9/3/030701/1076453/Strain-engineering-in-functional-materials" ], "knobs": [ { "name": "architecture", "unit": "category", "values": [ "finfet", "nanosheet", "cfet-watch" ] }, { "name": "channel_stressor", "unit": "category", "values": [ "nmos-tensile", "pmos-compressive" ] }, { "name": "stress_gpa_proxy", "unit": "GPa proxy", "values": [ 0, 0.5, 1, 1.5 ] }, { "name": "ambient_c", "unit": "C", "values": [ 25, 85 ] } ], "metrics": [ "mobility_gain_pct_proxy", "drive_current_gain_pct_proxy", "vt_shift_mv_proxy", "deformation_risk_score" ], "limitations": [ "No calibrated TCAD stress tensor is used.", "CFET is treated as a watch architecture and not a process-feasible claim.", "The goal is vocabulary and tradeoff structure: gain versus mechanics, parasitics, leakage, and uncertainty." ], "counts": { "rows": 48, "knobs": 4, "metrics": 4 }, "representativeFindings": [ "Stress engineering can become the missing bridge from process modules to device PPA.", "Nanosheet and CFET teaching needs mechanical-risk language beside electrostatics.", "The route should point learners from GAA electrostatics into integration constraints, not just smaller geometry." ], "rows": [ { "simulationId": "SA-DEV-STRESS-001", "slug": "sd-stressor-strain-mobility-risk", "architecture": "finfet", "channel_stressor": "nmos-tensile", "stress_gpa_proxy": 0, "ambient_c": 25, "mobility_gain_pct_proxy": 0, "drive_current_gain_pct_proxy": 0, "vt_shift_mv_proxy": 0, "leakage_multiplier_proxy": 1, "deformation_risk_score": 0, "band": "learning-window" }, { "simulationId": "SA-DEV-STRESS-001", "slug": "sd-stressor-strain-mobility-risk", "architecture": "finfet", "channel_stressor": "nmos-tensile", "stress_gpa_proxy": 0, "ambient_c": 85, "mobility_gain_pct_proxy": 0, "drive_current_gain_pct_proxy": 0, "vt_shift_mv_proxy": 0, "leakage_multiplier_proxy": 1.35, "deformation_risk_score": 8, "band": "learning-window" }, { 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