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"sha256": "C0191E220F51F3CCAB4D059ED873FF795C938B5CBB856196C4AFB8FD9ADF7674" }, "metrics": { "file": "selective-etch-metric-contract-v1.json", "sha256": "5D4BF1E80C925609820BC9508C15C04B529ED025166A2A642D1323FE24ED4640" }, "verifier": { "file": "independent-verifier-contract-v1.json", "sha256": "066CBCF31CFF43ACE0604149BE2C83DE6F1BD35B24E568F1F67A6D82B7666948" }, "sourceCatalog": { "file": "source_catalog_v1.json", "sha256": "19F4B5B7390FC62B937B0B556592282A073AAD22CA68ACBC71D28428F1C457AE" }, "claimMap": { "file": "source_claim_map_v1.json", "sha256": "30FE3863D076AF7392D34FF4EF3946728034BB97DAB37F5F6A48C578C3F22FD7" } }, "selectiveEtchRegimes": [ "target-exposure-starved", "neutral-delivery-limited", "loading-limited", "selectivity-limited", "byproduct-clearance-limited", "residue-interface-limited", "profile-uniformity-limited", "bounded-selective-etch" ], "requiredPhenomena": [ "target-material-exposure", "neutral-rich-delivery", "material-selectivity", "isotropic-feature-access", "loading-and-recess-uniformity", "byproduct-and-residue-clearance", "stop-interface-preservation", "metrology-and-throughput" ], "upstreamBridges": [ { "sourceExperimentId": "SA-EQP-VAC-GAS-009", "allowedFields": [ "upstream_vac_delivery_band", "upstream_vac_exhaust_band", "upstream_vac_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-EQP-PLASMA-CCP-ICP-008", "allowedFields": [ "upstream_plasma_neutrality_band", "upstream_plasma_ion_burden_band", "upstream_plasma_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-ETCH-RIE-010", "allowedFields": [ "upstream_rie_profile_band", "upstream_rie_surface_state_band", "upstream_rie_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-ETCH-ALE-015", "allowedFields": [ "upstream_ale_selectivity_band", "upstream_ale_surface_control_band", "upstream_ale_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false } ], "downstreamBridge": { "targetExperimentId": "SA-MET-INSPECTION-030", "allowedFields": [ "downstream_recess_uniformity_band", "downstream_selectivity_band", "downstream_residue_priority_band", "downstream_metrology_priority_band", "downstream_etch_evidence_gate", "teaching_selective_handoff_gate" ], "physicalUnitsAllowed": false, "automaticRecipeHandoffAllowed": false, "automaticGeometryHandoffAllowed": false, "automaticEquipmentActionAllowed": false, "automaticDispositionAllowed": false }, "replacementEvidenceRequirements": [ "accountable run identifier, wafer ownership, review owner, and disposition owner", "revisioned chamber, remote source if present, gas or vapor delivery, substrate assembly, exhaust, and sequencing configuration", "owned target, stop, mask, liner, cap, interface, and neighboring exposed-material identities with deposition, conditioning, use, and change histories", "owned reactant, carrier, inhibitor, passivation, catalyst, byproduct, residue, contamination, and surface-termination evidence appropriate to each claim", "target exposure, open-area, pattern-density, delivery, depletion, dose or residence, repeatability, and uncertainty evidence", "stop-surface exposure, stop-material loss, selectivity numerator and denominator, incubation, and uncertainty evidence", "pressure, pumping, throttle, conductance, chamber volume, residence, exhaust, wall state, and chamber-history evidence with uncertainty", "wafer temperature, spatial temperature map, substrate contact, thermal history, adsorption or condensation state, and calibration evidence", "plasma power, coupling, match, radical, ion, electron, ultraviolet, charging, and source-to-wafer exposure evidence with uncertainty where applicable", "revisioned source-to-wafer, injector, exhaust, aperture, mask, substrate, and neighboring-feature geometry", "revisioned feature, opening fraction, aspect ratio, pattern density, topography, pitch, recess, undercut, and sampling geometry", "blanket and patterned target-removal, stop-loss, lateral-recess, vertical-recess, and local-uniformity evidence", "reactive-species delivery, neutral fraction, energetic-particle burden, surface-reaction, inhibition, and loading evidence", "byproduct formation, volatility, redeposition, clearance, residue, rinse or post-treatment ownership, and contamination evidence", "top, middle, bottom, sidewall, interface, recess-front, and wafer-map measurements with uncertainty", "roughness, morphology, bonding, composition, adhesion, damage, defect, and electrical-interface evidence appropriate to the claim", "time-order, wafer-to-wafer, chamber-to-chamber, source-to-source, maintenance, wall-state, and drift evidence", "throughput, availability, process duration, queueing, utilization, abatement, and ownership evidence", "measurement-system analysis, calibration records, uncertainty budget, sampling plan, detection limits, and gauge capability", "model version, assumptions, parameters, applicability limits, independent review, rights review, safety review, and accountable approval" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless teaching replay only. No physical chemistry, material pair, plasma or vapor condition, transport, isotropy, selectivity, loading, etch rate, recess, residue, interface loss, geometry, equipment capability, recipe, qualification, reliability, or production fitness is computed or implied." }