{
  "schema": "semiagora.service-proof.v1",
  "version": "2026-08-14-v66",
  "execution_mode": "precomputed-only",
  "source_experiment": "07_assets/service_lab/experiments/PAPER_TO_SERVICE_DEMO_2026-08-14/",
  "generated_at": "2026-08-14",
  "headline": "Paper-to-service proof demos",
  "summary": "Three original deterministic synthetic demos show how public paper themes can become bounded semiconductor support packets without public intake, uploads, proprietary PDKs, or foundry-qualified signoff claims.",
  "portfolio_order": [
    "demo-sram-snm-write-margin",
    "demo-mosfet-idvg-extraction",
    "demo-mram-switching-retention"
  ],
  "demos": [
    {
      "id": "demo-sram-snm-write-margin",
      "title": "SRAM Write-Margin / WLVM Characterization Pack",
      "service_fit": "Very high",
      "likely_request": "Can you compare our 6T SRAM write margin or turn a WLVM paper method into a bounded characterization package?",
      "deliverable": "Metric definitions, synthetic cell population, WLVM distribution comparison, assist-strategy table, yield proxy, and limits.",
      "metrics": [
        "Best synthetic strategy: cell_vdd_collapse_assist",
        "p1 WLVM gain versus baseline: 35.848 mV",
        "Write-yield proxy at 95.0 mV WL drop: 100.0%"
      ],
      "public_route_hint": "/research-studio#service-proof",
      "related_routes": [
        "/simulations/sram-write-boundary",
        "/labs/sram-memory-depth",
        "/domains/memory"
      ]
    },
    {
      "id": "demo-mosfet-idvg-extraction",
      "title": "MOSFET Id-Vg Extraction Pack",
      "service_fit": "High",
      "likely_request": "Here are Id-Vg curves. Extract Vth, SS, gm, Ion/Ioff, and DIBL, then tell us whether the data convention is sane.",
      "deliverable": "Cleaned synthetic transfer curves, extraction convention, metric CSV, Id-Vg plot, method comparison, and caveats.",
      "metrics": [
        "Low-Vds constant-current Vth: 0.44021 V",
        "High-Vds constant-current Vth: 0.38539 V",
        "DIBL: 73.093 mV/V"
      ],
      "public_route_hint": "/research-studio#service-proof",
      "related_routes": [
        "/labs/mosfet-transfer",
        "/learn#device-path",
        "/domains/device"
      ]
    },
    {
      "id": "demo-mram-switching-retention",
      "title": "MRAM Switching Energy / Retention Scoping Pack",
      "service_fit": "Medium-high",
      "likely_request": "We are reading MRAM papers. Can you compare STT versus SOT tradeoffs or scope a first simulation?",
      "deliverable": "Thermal barrier assumptions, retention sensitivity, pulse and energy sweep, application-fit table, and missing-parameter checklist.",
      "metrics": [
        "Feasible synthetic cases: 20",
        "Lowest-energy feasible case: SOT, 45 kT, 25 C, 0.5 ns",
        "Lowest feasible switching energy: 43.651 fJ"
      ],
      "public_route_hint": "/research-studio#service-proof",
      "related_routes": [
        "/learn/mram-fundamentals",
        "/simulations/mram-switching-read-retention-triangle",
        "/domains/memory"
      ]
    }
  ],
  "public_boundaries": [
    "No public intake form is active.",
    "No public uploads, payments, accounts, or comments are enabled.",
    "No proprietary PDK, model deck, layout, NDA material, or confidential data is requested or stored here.",
    "No process recipes, equipment operating instructions, product qualification, or foundry signoff claims are provided.",
    "Synthetic demo data illustrates the workflow; real consulting would require authorized client data and a separate private agreement."
  ],
  "source_spine": [
    {
      "label": "SRAM WLVM arXiv paper",
      "url": "https://arxiv.org/abs/2411.15521"
    },
    {
      "label": "MOSFET threshold extraction record",
      "url": "https://stars.library.ucf.edu/facultybib2010/4499/"
    },
    {
      "label": "Keysight MOSFET threshold extraction note",
      "url": "https://www.keysight.com/blogs/en/tech/sim-des/mosfet-threshold-voltage-extraction"
    },
    {
      "label": "IBM STT-MRAM technology status page",
      "url": "https://research.ibm.com/publications/spin-transfer-torque-magnetoresistive-random-access-memory-technology-status-and-future-directions"
    },
    {
      "label": "npj SOT-MRAM review",
      "url": "https://www.nature.com/articles/s44306-024-00044-1"
    }
  ]
}