{ "schema": "semiagora.substrate-wafering-public-manifest.v1", "version": "2026-08-30-substrate-wafering-packet-v1", "packetVersion": "2026-08-30-substrate-wafering-v1", "experimentId": "SA-PROC-SUBSTRATE-WAFERING-036", "generatedAt": "2026-08-30T00:00:00+09:00", "status": "packet-only-not-deployed", "counts": { "rows": 5760, "physicalRows": 2880, "evidencePairs": 2880, "evidencePairComparisons": 547200, "columns": 192, "sources": 20, "claimNodes": 16, "normalizedProxyEquations": 20, "exactIntegerLedgerEquations": 16, "exactIntegerLedgers": 3, "prohibitedZeroFields": 112 }, "axes": [ { "id": "substrate_family", "count": 5, "values": [ "silicon-substrate-like", "silicon-on-insulator-like", "silicon-carbide-substrate-like", "sapphire-substrate-like", "gallium-nitride-substrate-like" ], "meaning": "Categorical substrate family only; not a supplier, grade, composition, polytype, orientation, specification, lot, wafer, or qualification." }, { "id": "crystal_growth_defect_state", "count": 2, 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rate, roughness value, or acceptance result." }, { "id": "geometry_shape_state", "count": 2, "values": [ "geometry-shape-constrained-like", "geometry-shape-supported-like" ], "meaning": "Categorical thickness variation, bow, warp, flatness, edge, and shape evidence posture only; not a physical dimension, map, method result, specification, or disposition." }, { "id": "incoming_quality_state", "count": 2, "values": [ "incoming-quality-supported-like", "incoming-quality-constrained-like" ], "meaning": "Categorical incoming inspection, traceability, map, uncertainty, and evidence-ownership posture only; not a sampling plan, threshold, defect map, grade, acceptance, release, or hold." }, { "id": "ordered_substrate_state", "count": 8, "values": [ "substrate-state-a", "substrate-state-b", "substrate-state-c", "substrate-state-d", "substrate-state-e", "substrate-state-f", "substrate-state-g", "substrate-state-h" ], "meaning": "Deterministic teaching sweep index only; it is not time, process 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gallium-nitride material identity, grade, orientation, polytype, impurity, and applicability evidence", "owned crystal-growth method, feedstock, seed, thermal history, interface, diameter, stress, crack, inclusion, and defect evidence", "owned vacancy, interstitial, dislocation, stacking-fault, micropipe, grain-boundary, void, inclusion, impurity, and bulk-property evidence", "owned slicing method, wire, abrasive, kerf, feed, speed, force, orientation, surface formation, and material-loss evidence", "owned grinding, lapping, wheel, grit, force, velocity, removal, subsurface-damage, residual-stress, and crack evidence", "owned polishing, pad, slurry, chemistry, pressure, velocity, removal, roughness, scratch, particle, and contamination evidence", "owned thickness, total-thickness-variation, bow, warp, flatness, site-flatness, edge, notch, sori, support, and gravity-correction evidence", "owned SOI device-layer, buried-oxide, interface, void, layer-transfer, bonding, and inspection evidence", "owned surface-termination, polarity, crystal-axis, wafer-face, edge, backside, cleaning, handling, packing, and storage evidence", "owned inspection tool, calibration, traceability, sampling, uncertainty, detection, nuisance, map registration, and data-retention evidence", "owned failure, crack, chip, scratch, contamination, geometry excursion, map mismatch, handling damage, and traceability-loss evidence", "approved materials engineering, crystal-growth engineering, wafering-process engineering, incoming-quality, metrology, packaging-integration, and change-control review", "accountable evidence owner, revision, timestamp, retention, qualification, release, hold, escalation, grade, and disposition boundary", "owned source rights, citation link, bibliographic metadata, applicability, access status, and evidence-boundary records" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless substrate and wafering evidence teaching replay only. No crystal-growth recipe, slicing or grinding setting, polishing recipe, defect or geometry limit, incoming acceptance criterion, sampling plan, equipment action, qualification, disposition, bonding readiness, or production fitness is computed or implied." }