{ "schema": "semiagora.tcad-doe-surrogate-optimization.v1", "version": "2026-08-22-v90", "generated_date": "2026-08-22", "execution_mode": "precomputed_browser_csv_replay_only", "title": "TCAD DOE and surrogate optimization replay", "slug": "tcad-doe-surrogate-optimization-replay", "route": "/simulations/tcad-doe-surrogate-optimization-replay", "lesson_route": "/learn/tcad-doe-surrogate-optimization-literacy", "lab_route": "/labs/tcad-doe-surrogate-optimization-literacy", "experiment_id": "SA-DEV-TCAD-OPT-004", "description": "A rights-clean browser replay for reading TCAD-style DOE and surrogate optimization evidence without running a solver, copying a deck, or making calibrated device claims.", "counts": { "rows": 6144, "device_contexts": 6, "design_levers": 4, "doe_plans": 4, "surrogate_families": 4, "objective_priorities": 4, "validation_postures": 4, "liveServerRuns": 0 }, "axes": { "device_contexts": [ { "id": "planar_mosfet_vt_window", "label": "Planar MOSFET Vt window", "mesh": 6, "calibration": 7, "risk": 12, "objective": 62, "boundary": "classic I-V/C-V extraction card" }, { "id": "finfet_short_channel_watch", "label": "FinFET short-channel watch", "mesh": 2, "calibration": 4, "risk": 18, "objective": 70, "boundary": "short-channel and variability card" }, { "id": "gaa_nanosheet_electrostatics", "label": "GAA nanosheet electrostatics", "mesh": 0, "calibration": 2, "risk": 20, "objective": 74, "boundary": "stack/width electrostatic card" }, { "id": "cfet_contact_parasitic_watch", "label": "CFET contact/parasitic watch", "mesh": -5, "calibration": -3, "risk": 26, "objective": 72, "boundary": "3D contact and local RC card" }, { "id": "power_mosfet_breakdown_guard", "label": "Power MOSFET breakdown guard", "mesh": -2, "calibration": 5, "risk": 24, "objective": 68, "boundary": "breakdown and field crowding card" }, { "id": "gan_hemt_trap_thermal_watch", "label": "GaN HEMT trap/thermal watch", "mesh": -7, "calibration": -5, "risk": 30, "objective": 76, "boundary": "trap, thermal, and recovery card" } ], "design_levers": [ { "id": "geometry_pitch_stack", "label": "Geometry / pitch / stack", "mesh": -2, "calibration": 2, "sample": 5, "uncertainty": 4, "constraint": 16, "fit": 7 }, { "id": "doping_profile_window", "label": "Doping profile window", "mesh": 4, "calibration": 4, "sample": 3, "uncertainty": 3, "constraint": 12, "fit": 5 }, { "id": "oxide_interface_boundary", "label": "Oxide / interface boundary", "mesh": 3, "calibration": -1, "sample": 2, "uncertainty": 8, "constraint": 18, "fit": 3 }, { "id": "contact_resistance_parasitic", "label": "Contact resistance / parasitic", "mesh": -4, "calibration": -2, "sample": 4, "uncertainty": 6, "constraint": 20, "fit": 4 } ], "doe_plans": [ { "id": "corner_grid_baseline", "label": "Corner grid baseline", "sample": 28, "mesh": 5, "uncertainty": 12, "risk": -4, "cost": 18 }, { "id": "latin_hypercube_screen", "label": "Latin hypercube screen", "sample": 54, "mesh": 2, "uncertainty": 3, "risk": -1, "cost": 34 }, { "id": "response_surface_refine", "label": "Response surface refine", "sample": 64, "mesh": 4, "uncertainty": -3, "risk": -6, "cost": 42 }, { "id": "active_learning_batch", "label": "Active-learning batch", "sample": 74, "mesh": -1, "uncertainty": -8, "risk": 2, "cost": 50 } ], "surrogate_families": [ { "id": "quadratic_rsm_proxy", "label": "Quadratic RSM proxy", "uncertainty": 10, "extrapolation": 9, "interpretability": 25, "calibration": 4, "fit": 3 }, { "id": "gaussian_process_uq", "label": "Gaussian process UQ", "uncertainty": -8, "extrapolation": 2, "interpretability": 14, "calibration": 2, "fit": 7 }, { "id": "tree_ensemble_screen", "label": "Tree ensemble screen", "uncertainty": 3, "extrapolation": 13, "interpretability": 9, "calibration": 0, "fit": 6 }, { "id": "physics_guarded_surrogate", "label": "Physics-guarded surrogate", "uncertainty": -5, "extrapolation": -6, "interpretability": 20, "calibration": 7, "fit": 8 } ], "objective_priorities": [ { "id": "drive_current_gain", "label": "Drive-current gain", "objective": 12, "risk": 6, "constraint": 8, "fit": 8 }, { "id": "leakage_offstate_guard", "label": "Leakage/off-state guard", "objective": 8, "risk": 4, "constraint": 12, "fit": 6 }, { "id": "electrostatic_control", "label": "Electrostatic control", "objective": 10, "risk": 2, "constraint": 7, "fit": 9 }, { "id": "reliability_thermal_margin", "label": "Reliability/thermal margin", "objective": 6, "risk": 10, "constraint": 15, "fit": 5 } ], "validation_postures": [ { "id": "mesh_convergence_required", "label": "Mesh convergence required", "mesh": 12, "calibration": 2, "uncertainty": -2, "risk": -3, "constraint": 1, "check": "mesh convergence rerun and residual review" }, { "id": "calibration_anchor_required", "label": "Calibration anchor required", "mesh": 4, "calibration": 14, "uncertainty": -1, "risk": -2, "constraint": 2, "check": "I-V/C-V calibration anchor review" }, { "id": "extrapolation_guard_required", "label": "Extrapolation guard required", "mesh": 2, "calibration": 4, "uncertainty": -4, "risk": -12, "constraint": 4, "check": "bounded DOE hull and extrapolation review" }, { "id": "constraint_review_required", "label": "Constraint review required", "mesh": 3, "calibration": 3, "uncertainty": 1, "risk": -1, "constraint": -14, "check": "physics and integration constraint review" } ] }, "summary": { "decision_gate_counts": { "owner_review_required": 1597, "surrogate_uncertainty_review": 131, "constraint_review": 2240, "bounded_teaching_candidate": 510, "extrapolation_guard_review": 318, "calibration_anchor_review": 612, "mesh_convergence_review": 736 }, "average_mesh_stability_score": "66.80", "average_calibration_anchor_score": "65.82", "average_sample_efficiency_score": "89.14", "average_surrogate_uncertainty_proxy": "41.69", "average_extrapolation_risk_proxy": "50.40", "average_pareto_readiness_score": "61.95", "reference_case_examples": [] }, "example_rows": [ { "case_id": "TCADOPT-0001", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "drive_current_gain", "objective_priority_label": "Drive-current gain", "validation_posture": "mesh_convergence_required", "validation_posture_label": "Mesh convergence required", "mesh_stability_score": "80.80", "calibration_anchor_score": "69.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "60.11", "extrapolation_risk_proxy": "52.96", "constraint_violation_proxy": "57.20", "objective_fit_score": "56.14", "pareto_readiness_score": "55.36", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; mesh convergence rerun and residual review" }, { "case_id": "TCADOPT-0002", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "drive_current_gain", "objective_priority_label": "Drive-current gain", "validation_posture": "calibration_anchor_required", "validation_posture_label": "Calibration anchor required", "mesh_stability_score": "72.80", "calibration_anchor_score": "81.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "61.11", "extrapolation_risk_proxy": "53.96", "constraint_violation_proxy": "58.20", "objective_fit_score": "55.96", "pareto_readiness_score": "54.89", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; I-V/C-V calibration anchor review" }, { "case_id": "TCADOPT-0003", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "drive_current_gain", "objective_priority_label": "Drive-current gain", "validation_posture": "extrapolation_guard_required", "validation_posture_label": "Extrapolation guard required", "mesh_stability_score": "70.80", "calibration_anchor_score": "71.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "58.11", "extrapolation_risk_proxy": "43.96", "constraint_violation_proxy": "60.20", "objective_fit_score": "54.76", "pareto_readiness_score": "55.87", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; bounded DOE hull and extrapolation review" }, { "case_id": "TCADOPT-0004", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "drive_current_gain", "objective_priority_label": "Drive-current gain", "validation_posture": "constraint_review_required", "validation_posture_label": "Constraint review required", "mesh_stability_score": "71.80", "calibration_anchor_score": "70.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "63.11", "extrapolation_risk_proxy": "54.96", "constraint_violation_proxy": "42.20", "objective_fit_score": "56.72", "pareto_readiness_score": "55.86", "decision_gate": "surrogate_uncertainty_review", "evidence_state": "surrogate uncertainty too high", "next_safe_check": "add samples or change surrogate family before optimization claims", "review_readout": "classic I-V/C-V extraction card; physics and integration constraint review" }, { "case_id": "TCADOPT-0005", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "leakage_offstate_guard", "objective_priority_label": "Leakage/off-state guard", "validation_posture": "mesh_convergence_required", "validation_posture_label": "Mesh convergence required", "mesh_stability_score": "80.80", "calibration_anchor_score": "69.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "60.11", "extrapolation_risk_proxy": "50.96", "constraint_violation_proxy": "61.20", "objective_fit_score": "54.86", "pareto_readiness_score": "54.89", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; mesh convergence rerun and residual review" }, { "case_id": "TCADOPT-0006", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "leakage_offstate_guard", "objective_priority_label": "Leakage/off-state guard", "validation_posture": "calibration_anchor_required", "validation_posture_label": "Calibration anchor required", "mesh_stability_score": "72.80", "calibration_anchor_score": "81.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "61.11", "extrapolation_risk_proxy": "51.96", "constraint_violation_proxy": "62.20", "objective_fit_score": "54.68", "pareto_readiness_score": "54.43", "decision_gate": "constraint_review", "evidence_state": "physics constraint review required", "next_safe_check": "review physics, process-integration, and device-owner constraints before reuse", "review_readout": "classic I-V/C-V extraction card; I-V/C-V calibration anchor review" }, { "case_id": "TCADOPT-0007", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "leakage_offstate_guard", "objective_priority_label": "Leakage/off-state guard", "validation_posture": "extrapolation_guard_required", "validation_posture_label": "Extrapolation guard required", "mesh_stability_score": "70.80", "calibration_anchor_score": "71.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "58.11", "extrapolation_risk_proxy": "41.96", "constraint_violation_proxy": "64.20", "objective_fit_score": "53.48", "pareto_readiness_score": "55.40", "decision_gate": "constraint_review", "evidence_state": "physics constraint review required", "next_safe_check": "review physics, process-integration, and device-owner constraints before reuse", "review_readout": "classic I-V/C-V extraction card; bounded DOE hull and extrapolation review" }, { "case_id": "TCADOPT-0008", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "leakage_offstate_guard", "objective_priority_label": "Leakage/off-state guard", "validation_posture": "constraint_review_required", "validation_posture_label": "Constraint review required", "mesh_stability_score": "71.80", "calibration_anchor_score": "70.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "63.11", "extrapolation_risk_proxy": "52.96", "constraint_violation_proxy": "46.20", "objective_fit_score": "55.44", "pareto_readiness_score": "55.39", "decision_gate": "surrogate_uncertainty_review", "evidence_state": "surrogate uncertainty too high", "next_safe_check": "add samples or change surrogate family before optimization claims", "review_readout": "classic I-V/C-V extraction card; physics and integration constraint review" }, { "case_id": "TCADOPT-0009", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "electrostatic_control", "objective_priority_label": "Electrostatic control", "validation_posture": "mesh_convergence_required", "validation_posture_label": "Mesh convergence required", "mesh_stability_score": "80.80", "calibration_anchor_score": "69.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "60.11", "extrapolation_risk_proxy": "48.96", "constraint_violation_proxy": "56.20", "objective_fit_score": "55.92", "pareto_readiness_score": "56.06", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; mesh convergence rerun and residual review" }, { "case_id": "TCADOPT-0010", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "electrostatic_control", "objective_priority_label": "Electrostatic control", "validation_posture": "calibration_anchor_required", "validation_posture_label": "Calibration anchor required", "mesh_stability_score": "72.80", "calibration_anchor_score": "81.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "61.11", "extrapolation_risk_proxy": "49.96", "constraint_violation_proxy": "57.20", "objective_fit_score": "55.74", "pareto_readiness_score": "55.60", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; I-V/C-V calibration anchor review" }, { "case_id": "TCADOPT-0011", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "electrostatic_control", "objective_priority_label": "Electrostatic control", "validation_posture": "extrapolation_guard_required", "validation_posture_label": "Extrapolation guard required", "mesh_stability_score": "70.80", "calibration_anchor_score": "71.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "58.11", "extrapolation_risk_proxy": "39.96", "constraint_violation_proxy": "59.20", "objective_fit_score": "54.54", "pareto_readiness_score": "56.57", "decision_gate": "owner_review_required", "evidence_state": "owner review required", "next_safe_check": "route to device-owner review before any downstream claim", "review_readout": "classic I-V/C-V extraction card; bounded DOE hull and extrapolation review" }, { "case_id": "TCADOPT-0012", "device_context": "planar_mosfet_vt_window", "device_context_label": "Planar MOSFET Vt window", "design_lever": "geometry_pitch_stack", "design_lever_label": "Geometry / pitch / stack", "doe_plan": "corner_grid_baseline", "doe_plan_label": "Corner grid baseline", "surrogate_family": "quadratic_rsm_proxy", "surrogate_family_label": "Quadratic RSM proxy", "objective_priority": "electrostatic_control", "objective_priority_label": "Electrostatic control", "validation_posture": "constraint_review_required", "validation_posture_label": "Constraint review required", "mesh_stability_score": "71.80", "calibration_anchor_score": "70.40", "sample_efficiency_score": "71.75", "surrogate_uncertainty_proxy": "63.11", "extrapolation_risk_proxy": "50.96", "constraint_violation_proxy": "41.20", "objective_fit_score": "56.50", "pareto_readiness_score": "56.56", "decision_gate": "surrogate_uncertainty_review", "evidence_state": "surrogate uncertainty too high", "next_safe_check": "add samples or change surrogate family before optimization claims", "review_readout": "classic I-V/C-V extraction card; physics and integration constraint review" } ], "sources": [ { "label": "DEVSIM TCAD Semiconductor Device Simulator", "url": "https://devsim.org/index.html", "note": "Official public project page for an open-source TCAD device simulator. SemiAgora uses it as a link-only solver vocabulary anchor." }, { "label": "DEVSIM JOSS paper", "url": "https://joss.theoj.org/papers/10.21105/joss.03898", "note": "Peer-reviewed software paper metadata for DEVSIM. No paper body, examples, or code are copied." }, { "label": "Synopsys TCAD overview", "url": "https://www.synopsys.com/manufacturing/tcad.html", "note": "Official public overview anchoring TCAD process/device simulation, calibration, and optimization vocabulary." }, { "label": "NIST response surface designs", "url": "https://www.itl.nist.gov/div898/handbook/pri/section3/pri336.htm", "note": "NIST handbook page anchoring response-surface vocabulary for curvature, interactions, and quadratic models." }, { "label": "SciPy quasi-Monte Carlo sampling", "url": "https://docs.scipy.org/doc/scipy/reference/stats.qmc.html", "note": "Official SciPy documentation for Latin hypercube, Sobol, Halton, and other low-discrepancy sampling tools." }, { "label": "scikit-learn GaussianProcessRegressor", "url": "https://scikit-learn.org/stable/modules/generated/sklearn.gaussian_process.GaussianProcessRegressor.html", "note": "Official scikit-learn API reference anchoring Gaussian-process regression and predictive uncertainty vocabulary." }, { "label": "TCAD-generated surrogate optimization paper", "url": "https://arxiv.org/abs/2208.01142", "note": "Public arXiv metadata for a TCAD-generated surrogate model used with differential-evolution optimization." }, { "label": "NIST semiconductor multiscale modeling and validation", "url": "https://www.nist.gov/programs-projects/multiscale-modeling-and-validation-semiconductor-materials-and-devices", "note": "NIST project page anchoring validation, uncertainty, and machine-learning acceleration vocabulary." } ], "public_boundary": [ "No live TCAD, SPICE, process, electrothermal, RF, field-solver, or optimizer execution runs in the browser or on the server.", "No TCAD deck, mesh, structure file, material file, PDK, compact model, process recipe, solver transcript, calibration dataset, measured silicon, or vendor benchmark is copied.", "No device ranking, foundry-node claim, product recommendation, qualification, signoff, or production optimization claim is made.", "Rows are original synthetic teaching proxies and require owned solver decks, mesh convergence, measured I-V/C-V, uncertainty validation, and device-owner review before engineering reuse." ], "limitations": [ "The numeric scores are normalized literacy proxies, not calibrated TCAD outputs.", "DOE plans and surrogate families are represented as teaching categories, not as executable code or optimizer services.", "Source links are citation anchors and topic signals only; external text, code, figures, tables, and examples remain with their rights holders." ] }