# SemiAgora knowledge simulation sprint model card

Generated: 2026-08-14

Experiment: KNOWLEDGE_SIM_SPRINT_2026-08-14

## Scope

This package converts current public semiconductor literature, public documentation, and open-source repository signals into original SemiAgora simulation candidates. The outputs are deterministic, precomputed, and educational. They are not calibrated process/device/circuit signoff results.

## Produced packs

- SA-MEM-PCM-001: PCM SET/RESET pulse and resistance-drift replay (54 rows, P0, /simulations/pcm-set-reset-drift-read-margin)
- SA-MEM-RERAM-001: ReRAM set/reset variability and read-window replay (54 rows, P0, /simulations/reram-set-reset-variability-read-window)
- SA-MEM-NAND3D-001: 3D NAND string Vt distribution, read-retry, and ECC margin replay (108 rows, P0, /simulations/3d-nand-string-vt-ecc-retention)
- SA-PROC-CMP-001: CMP pattern-density dishing and erosion replay (54 rows, P0, /simulations/cmp-pattern-density-dishing-erosion)
- SA-DEV-STRESS-001: Source/drain stressor strain, mobility, and deformation-risk replay (48 rows, P0, /simulations/sd-stressor-strain-mobility-risk)
- SA-EDA-STA-001: STA Liberty path slack replay (81 rows, P0, /simulations/sta-liberty-path-slack-replay)
- SA-PWR-GAN-001: GaN HEMT exfoliation, substrate reuse, and risk/cost replay (54 rows, P1, /simulations/gan-hemt-exfoliation-yield-cost)
- SA-IMG-TDI-001: CCD-in-CMOS TDI charge-transfer replay (54 rows, P1, /simulations/ccd-in-cmos-tdi-charge-transfer)
- SA-DEV-CRYO-001: Cryogenic NMOS parameter-calibration replay (108 rows, P1, /simulations/cryo-nmos-parameter-calibration)
- SA-DEV-CFET-001: GAA/CFET stack PPA and integration-risk replay (36 rows, P1, /simulations/gaa-cfet-stack-ppa-risk)

## Boundaries

- precomputed educational data only
- no live solver or server-side execution
- no proprietary PDK, foundry model deck, measured company data, or process recipe
- no equipment operation instructions or production qualification claims
- external literature and repositories are cited as source spines, not copied

## Source spine

- pcm: https://www.sciencedirect.com/science/article/pii/S1369702120302601
- pcm: https://pmc.ncbi.nlm.nih.gov/articles/PMC12196659/
- reram: https://pmc.ncbi.nlm.nih.gov/articles/PMC7176808/
- reram: https://pubs.aip.org/aip/apm/article/11/9/090701/2909724/A-review-on-device-requirements-of-resistive
- reram: https://github.com/fgr1986/vlsi_memristor_compact_model
- reram: https://nano.stanford.edu/downloads/stanford-rram-model
- nand3d: https://www.mdpi.com/2073-431X/6/2/16
- nand3d: https://www.pdl.cmu.edu/PDL-FTP/NVM/flash-memory-voltage-characterization_date13.pdf
- nand3d: https://github.com/NetherlandsForensicInstitute/nandtool
- cmp: https://www.mdpi.com/2079-9292/9/7/1158
- cmp: https://link.springer.com/article/10.1007/s40684-025-00819-9
- stress: https://pmc.ncbi.nlm.nih.gov/articles/PMC10058282/
- stress: https://pubs.aip.org/aip/adv/article/9/3/030701/1076453/Strain-engineering-in-functional-materials
- sta: https://github.com/The-OpenROAD-Project/OpenSTA
- sta: https://docs.verilogtorouting.org/en/latest/tutorials/timing_analysis/
- sta: https://github.com/VLSIDA/chip-tutorials/blob/main/sta.md
- gan: https://www.semiconductor-today.com/news_items/2026/aug/shanghaitech-130826.shtml
- gan: https://www.mdpi.com/2072-666X/12/10/1159
- gan: https://pmc.ncbi.nlm.nih.gov/articles/PMC9072382/
- tdi: https://github.com/IntrovertedTao/ccd-in-cmos-tdi-pixel
- cryo: http://arxiv.org/abs/2608.12692v1
- cfet: http://arxiv.org/abs/2607.12707v1

## Promotion recommendation

Promote the six P0 cards first: PCM drift, ReRAM variability, 3D NAND Vt/ECC, CMP pattern effects, source/drain stressor risk, and STA Liberty path replay. Keep GaN exfoliation, TDI imaging, cryogenic MOSFET calibration, and CFET stack PPA as P1 until stronger source review and original visuals are prepared.