{ "schema": "semiagora.wet-etch-public-manifest.v1", "version": "2026-08-29-packet-v1", "packetVersion": "2026-08-29-wet-etch-v1", "experimentId": "SA-PROC-ETCH-WET-019", "generatedAt": "2026-08-29T00:00:00+09:00", "status": "packet-only-not-deployed", "counts": { "rows": 6912, "physicalRows": 3456, "evidencePairs": 3456, "evidencePairComparisons": 656640, "columns": 192, "sources": 20, "claimNodes": 16, "normalizedProxyEquations": 20, "exactIntegerLedgerEquations": 16, "exactIntegerLedgers": 3, "prohibitedZeroFields": 112 }, "axes": [ { "id": "application_family", "count": 4, "values": [ "bulk_silicon_cavity_like", "surface_micromachining_release_like", "oxide_pattern_transfer_like", "single_wafer_wet_process_like" ], "meaning": "Teaching integration archetypes without customer, device design, material identity, feature dimension, tool, recipe, or qualification." }, { "id": "wet_etch_mode", "count": 3, "values": [ "isotropic_liquid_etch_like", "crystallographic_anisotropic_like", "agitated_single_wafer_like" ], "meaning": "Bounded wet-process taxonomy only; no etchant identity, composition, concentration, temperature, agitation, hardware, sequence, or equipment command." }, { "id": "surface_reaction_state", "count": 3, "values": [ "reaction_suppressed_like", "reaction_balanced_like", "reaction_aggressive_like" ], "meaning": "Original categorical surface-reaction posture; not chemistry, rate constant, activation energy, surface termination, reaction probability, or process condition." }, { "id": "mass_transfer_state", "count": 3, "values": [ "boundary_layer_restricted_like", "transport_nominal_like", "transport_open_like" ], "meaning": "Original categorical reactant-delivery and dissolution-product-removal posture; not diffusivity, boundary-layer thickness, flow, flux, or transport calculation." }, { "id": "mask_selectivity_state", "count": 2, "values": [ "mask_margin_limited_like", "mask_margin_available_like" ], "meaning": "Original categorical mask-margin posture; not mask identity, thickness, loss rate, etch selectivity, compatibility, or qualification." }, { "id": "collapse_posture_state", "count": 2, "values": [ "collapse_controlled_like", "capillary_sensitive_like" ], "meaning": "Original categorical capillary-sensitivity posture; not surface tension, force, deflection, adhesion, failure probability, or drying instruction." }, { "id": "ordered_state", "count": 8, "values": [ "W00", "W01", "W02", "W03", "W04", "W05", "W06", "W07" ], "meaning": "Eight ordered review states for deterministic branch coverage; explicitly not time, etch depth, removal progress, concentration, endpoint, bath state, or equipment state." }, { "id": "evidence_posture", "count": 2, "values": [ "teaching_assumption", "replacement_slot" ], "meaning": "Metadata only. 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"sourceBodiesStored": false, "sourceNumericUse": "none" }, "currentPublicBaseline": { "version": "v109", "versionId": "appgprj_6a6f4d3affc0819189d99a8f29062540~appgver_005d791cd0f881919fe28dce4fc90e8f", "deploymentId": "appgdep_6a91677cd40081919caf523a472130f6", "sourceCommit": "c3888cc26eb434d9ca88e76889f781194044db4a", "changedByThisPacket": false, "publicVersionReserved": "none", "releaseDecision": "hold" }, "publicDelivery": { "mode": "metadata-manifest-plus-csv-rows", "rowsEmbedded": false, "rowArtifact": "wet-etch-state-v1.csv", "rowArtifactSha256": "6067A6532A8804417A556C3DAB3FF03E43BF27698C3E2D27F8A1D79DD1700030", "canonicalRowBearingArtifact": "wet-etch-state-web-v1.json", "canonicalRowBearingArtifactSha256": "F9497DD41105728AE8CA310437BE4FB77612C33252254D53C4C2ECEEF048A528", "independentValidationArtifact": "validation-report-v1.json", "independentValidationArtifactSha256": "8D5F355A2F4BCA566AADBFD39DAEC385B6D96DC9DD4C612D020C6B8EAE9EBE59", "sourceSpineArtifact": 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"reactant-delivery-starved", "surface-reaction-limited", "mass-transfer-limited", "mask-selectivity-limited", "undercut-profile-limited", "pattern-collapse-limited", "surface-readiness-limited", "bounded-wet-etch" ], "requiredPhenomena": [ "process-mode-and-reactant-delivery", "surface-reaction-and-orientation", "boundary-layer-and-feature-access", "mask-selectivity-and-loss", "undercut-facet-and-geometry-evolution", "pattern-collapse-and-stiction", "endpoint-roughness-and-surface-readiness", "uniformity-bath-drift-metrology-and-throughput" ], "upstreamBridges": [ { "sourceExperimentId": "SA-PROC-ETCH-STRIP-ASH-018", "allowedFields": [ "upstream_strip_ash_surface_band", "upstream_strip_ash_residue_band", "upstream_strip_ash_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-ETCH-RIE-010", "allowedFields": [ "upstream_rie_profile_band", "upstream_rie_residue_band", "upstream_rie_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-DEP-PVD-012", "allowedFields": [ "upstream_pvd_film_band", "upstream_pvd_interface_band", "upstream_pvd_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false }, { "sourceExperimentId": "SA-PROC-DEP-CVD-PECVD-013", "allowedFields": [ "upstream_cvd_pecvd_dielectric_band", "upstream_cvd_pecvd_stress_band", "upstream_cvd_pecvd_evidence_gate" ], "physicalUnitsAllowed": false, "automaticStateImportAllowed": false } ], "downstreamBridge": { "targetExperimentId": "SA-MET-INSPECTION-030", "allowedFields": [ "downstream_surface_roughness_band", "downstream_geometry_review_band", "downstream_collapse_priority_band", "downstream_metrology_priority_band", "downstream_inspection_evidence_gate", "teaching_wet_etch_handoff_gate" ], "physicalUnitsAllowed": false, "automaticRecipeHandoffAllowed": false, "automaticGeometryHandoffAllowed": false, "automaticEquipmentActionAllowed": false, "automaticDispositionAllowed": false }, "replacementEvidenceRequirements": [ "accountable run identifier, wafer ownership, process owner, endpoint owner, drying owner, measurement owner, and disposition owner", "revisioned bath, single-wafer module, nozzle, recirculation, filtration, thermal-control, exhaust, and sequencing configuration", "owned substrate, target layer, mask, stop layer, underlying layer, neighboring material, interface, and preparation histories", "owned etchant, buffer, additive, dissolved species, reaction product, contamination, and surface-termination evidence appropriate to each claim", "mask identity, deposition history, pattern transfer, thickness, defect, adhesion, and pre-etch condition evidence", "wafer crystal orientation, surface orientation, notch alignment, pattern alignment, and orientation uncertainty", "target and mask geometry, feature depth, opening, pitch, aspect context, exposed area, loading, and layout ownership", "owned bath make-up, age, replenishment, carryover, contamination, filtration, and conditioning history", "owned delivery, agitation, recirculation, nozzle motion, wafer motion, and feature-access evidence", "owned temperature history and spatial-uniformity evidence with calibrated sensors and traceability", "owned reaction-rate, mass-transfer, etchfront, undercut, facet, roughness, and loading measurements with uncertainty", "owned mask-loss, material-selectivity, stop-layer, interface, and neighboring-material compatibility evidence", "owned etch-progress and endpoint signal, algorithm, threshold, latency, stop action, and false-trigger review", "owned rinse, transfer, drying, capillary exposure, collapse, adhesion, and stiction evidence", "owned post-etch residue, particles, ionic contamination, roughness, surface chemistry, and readiness measurements", "owned within-wafer, wafer-to-wafer, lot-to-lot, bath-age, and equipment-position variation evidence", "owned metrology methods, sampling plan, calibration state, detection limits, uncertainty, and raw-data lineage", "owned throughput, queue, bath life, consumable, maintenance, and equipment-availability evidence", "independent review of model boundary, proxy ownership, replacement completeness, and non-predictive teaching use", "downstream inspection approval and accountable integration, yield, reliability, and disposition review" ], "requiredSections": [ "Explore", "Run Card", "Export", "Methods", "Limits", "Evidence" ], "limitation": "Original dimensionless wet etch teaching replay only. No physical chemistry, sequence, temperature, plasma species, reaction condition, transport composition, removal rate, film thickness, mask loss, low-k damage, collapse trace, across-wafer uniformity, chamber behavior, equipment capability, recipe, qualification, reliability, or production fitness is computed or implied." }