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MEMORY REPLAY LAB / SA-MEM-MRAM-002

Switching is only one corner of the MRAM tradeoff.
Memory

MRAM needs a memory-hierarchy explanation: write energy, write time, switch probability, read margin, retention, and disturb risk pull against each other.

packetSA-MEM-MRAM-002runSimulation ObjectlearnEvidence SequencemethodMethodslimitsBoundaries

EVIDENCE SEQUENCE

What the learner should inspect first.

This surface connects the daily-scan source signal to an original SemiAgora simulation object without copying source text, code, figures, PDK files, or process recipes.

01

Compare STT and SOT labels as mechanism cues, not commercial guarantees.

Open the run card to inspect the saved rows, methods, limits, and export files behind this step.

Inspect run card ->
02

Move thermal barrier and pulse width while tracking write energy and read margin.

Open the run card to inspect the saved rows, methods, limits, and export files behind this step.

Inspect run card ->
03

Keep retention and disturb risk in the same table before placing MRAM in the hierarchy.

Open the run card to inspect the saved rows, methods, limits, and export files behind this step.

Inspect run card ->

METHODS

Precomputed model contract.

The goal is useful study scaffolding and paper-planning discipline, not calibrated production evidence.

method

Normalized STT/SOT teaching model.

The simulation object keeps the same statement beside downloadable JSON and CSV evidence.

method

Triangle score combines switch probability, read margin, retention, energy, and disturb risk.

The simulation object keeps the same statement beside downloadable JSON and CSV evidence.

method

The simulation exports rows for later figure and methods drafting.

The simulation object keeps the same statement beside downloadable JSON and CSV evidence.

LIMITS

Useful, but deliberately bounded.

No account, upload, payment, comment, newsletter, live solver, facility workflow, or product-release surface is enabled.

non-claim

No calibrated MTJ stack, stochastic LLG solve, endurance data, or array implementation.

Keep this boundary attached when reusing the card for lesson writing, figure planning, or research notes.

non-claim

No claim that MRAM replaces SRAM, DRAM, Flash, or HBM.

Keep this boundary attached when reusing the card for lesson writing, figure planning, or research notes.

non-claim

Real study needs measured device data, sense circuitry, write-error statistics, and retention/endurance conditions.

Keep this boundary attached when reusing the card for lesson writing, figure planning, or research notes.

SOURCE ANCHOR

Link-only public source spine.

SemiAgora uses the source as a signal and citation anchor, then writes original summaries and original toy data with explicit limitations.

ArXiv MRAM fundamentals signal

https://arxiv.org/abs/1906.10206

Open source ->