Evidence-centered replay
Browse curated simulation objects / Replay saved datasets and browser plots / Open linked labs and lessons / Download public evidence files, netlists, scripts, and source notes / release-level public provenance
SIMULATION ATLAS
A precomputed simulation and evidence catalog with release-level provenance, connected lessons, labs, methods, limits, and downloadable public artifacts.
SIMULATION-FIRST CATALOG
Each object is a typed JSON entry with a lesson route, lab route, run card, exports, methods, limits, and evidence notes. The v67 atlas filter adds 5 search facets so users can find the right evidence object before a new lesson is written.
Sweep VIN, plot VOUT, estimate switching point, sampled gain, and noise margins.
Use ring-oscillator transients to extract per-stage delay across stage count and load.
Close an odd inversion loop and turn inverter delay into a measurable oscillation frequency.
Replay SKY130 6T read cases across bitline load, 100 mV sense delay, and internal-node disturb.
Compare hold and read butterfly curves, maximum-square SNM, and read-access margin loss.
Replay the 24-case SKY130 shmoo that maps dynamic write success versus wordline level and write-VDD assist.
Replay a lumped-bitline model that connects cell current, bitline capacitance, and sense-enable timing.
Replay the verified transaction trace that turns read/write requests into one-cycle checked responses.
Replay 80-access March C- traces for no-fault, stuck-at-0, and stuck-at-1 SRAM scenarios.
Replay exhaustive one- and two-bit codeword fault injection for an 8-bit SECDED memory word.
Replay radial film-thickness profiles to see why rotation, source shape, pressure regime, and geometry matter before a sputter recipe is trusted.
Compare long-throw and short-throw evaporation profiles, then separate open-field uniformity from sidewall shadowing.
Replay dose saturation, 100-cycle thickness arithmetic, temperature-window framing, and aspect-ratio conformality warnings.
Compare dry and wet oxidation growth, silicon consumption, and diffusion broadening before treating thermal steps as reusable evidence.
Replay a dose/focus matrix to see why a printed CD is only useful when the process window and variation boundary are visible.
Compare isotropic, directional, and low-selectivity etch cases to keep mask budget, CD loss, and sidewall profile attached.
Replay Preston-style removal, pattern-density warnings, radial nonuniformity, and endpoint margin before citing a CMP result.
Replay projected range, straggle, activation, and diffusion broadening to keep doping evidence separate from a recipe.
Replay a thin-film thickness fit and inspect residuals so a plotted film thickness is not separated from its optical-model assumptions.
Replay a wafer-level sheet-resistance map and compute nonuniformity before treating a process split as electrically stable.
Fit resistance versus contact spacing to separate sheet resistance, contact resistance, and geometry assumptions.
Replay CD site statistics and overlay vectors so lithography evidence carries linewidth and registration together.
Replay a CD sample set and compute Cp/Cpk so process spread, centering, and out-of-spec count stay distinct.
Replay a two-factor process grid so deposition rate, film stress, center points, and curvature warnings travel together.
Replay contact-angle reduction, residue removal proxy, ion-exposure warning, and air recovery after oxygen plasma activation.
Replay ozone and UV-O3 organic removal, hydrophilicity, hydroxylation proxy, and oxide-growth caution before deposition.
Replay normalized rapid-thermal-anneal budgets to compare dopant activation, diffusion broadening, and sheet-resistance proxy.
Compare furnace soak, spike RTA, and millisecond anneal modes so shallow-junction benefit and temperature-control risk stay visible together.
Replay post-implant defect recovery, activated fraction, and transient-enhanced-diffusion tail growth on one normalized anneal axis.
Replay under-reacted, target-window, and over-annealed contact cases so sheet resistance and morphology risk stay paired.
Compare conceptual organic, particle, metal, and native-oxide proxies across a public-safe wet-clean evidence sequence.
Replay a normalized native-oxide removal window with hydrophobicity, reoxidation sensitivity, and queue-time caution shown together.
Compare dehydration, hydrophobicity, adhesion score, and overprime or delay risk for public-safe lithography surface-prep review.
Map downstream process intent to surface target, evidence needs, and risk flags without publishing a wet-bench or lithography flow.
Compare teaching package cases by loop inductance, coupling capacitance, signal delay, and PDN impedance.
Add junction-to-case and case-to-ambient resistance while keeping hotspot coupling visible.
Replay a teaching guardband tradeoff between yield, top bin, estimated escapes, and retest load.
Connect infant mortality, useful life, wearout, and accelerated stress vocabulary without claiming qualification.
Compare traffic, air-change proxy, mini-environment, recovery, and excursion-risk vocabulary without creating a cleanroom operation workflow.
Replay volume, effective speed, leak-floor, and target-pressure vocabulary for vacuum tools without pump selection or operation guidance.
Read RAM, utilization, downtime, and queue-pressure vocabulary without creating dispatch, PM, or production workflow logic.
Compare cleanroom air, vacuum/exhaust, UPW/cooling, precision support, and abatement load lanes without facility design or operation guidance.
Replay bitline differential, offset sigma, attenuation loss, positive margin, and decision-time interpretation before claiming a sense amplifier can resolve.
Replay how normalized cell ratio and wordline pulse width change read-disturb peak, read-SNM proxy, and a retained/not-retained budget.
Classify baseline write, cell-VDD collapse, wordline boost, negative bitline, and read wordline-underdrive as tradeoff cards instead of recipe settings.
Replay blocked, sequential, strided, random, and conflict-thrashing access patterns with AMAT so SRAM timing stays connected to system-visible latency.
Replay row-hit rate and bank count to see why locality and bank-level parallelism shape DRAM/HBM latency and throughput before raw bandwidth matters.
Replay STT/SOT-style write probability, pulse width, retention barrier, and write energy as a compact MRAM tradeoff card.
Replay endurance, temperature, variability, and normalized read margin across RRAM, PCM, and FeFET style memory labels.
Replay array size, ADC bits, conductance variation, accuracy proxy, and energy index for compute-in-memory crossbar intuition.
Replay focus, exposure, CD-error proxy, overlay proxy, and pass/fail window to explain process windows without scanner recipes.
Replay temperature and time to compare activation fraction, diffusion length, and a junction tradeoff score without exposing anneal recipes.
Replay treatment type, normalized dose, substrate class, activation proxy, and ALD nucleation-delay cycles for surface-prep intuition.
Replay output voltage and output resistance to see when a current mirror stops behaving like a current source.
Replay input differential, offset sigma, decision probability, regeneration time, and fail-rate proxy for memory and comparator intuition.
Replay feature aspect ratio and scattering proxy to see why PVD coverage is not just blanket thickness.
Replay VDD and temperature to connect standard-cell delay, switching energy, leakage, and an EDP-style index.
Replay cell capacitance, bitline capacitance, and stored voltage to see the small differential a DRAM sense amplifier must resolve.
Replay leakage class, temperature, and refresh interval to see why weak-cell tails drive refresh policy.
Replay activation count, victim distance, and temperature to frame RowHammer as a pattern, margin, mitigation, and ECC-evidence problem.
Replay SLC/MLC/TLC/QLC threshold crowding, P/E cycles, retention time, and ECC margin proxy.
Replay cycle count, temperature, and program pulse to see how ferroelectric memory window can wake up, fatigue, and shift.
Replay stack height, target bandwidth, and cooling class to see usable bandwidth, energy per bit, and throttle risk together.
Replay SRAM, DRAM, HBM, SCM, NAND, and MRAM across workload weights to choose the right evidence question.
Replay fin count, gate length, and Vt flavor to compare drive current, capacitance, leakage, delay index, and PPA score.
Replay sheet count, nanosheet width, and variability class to compare control, drive, capacitance, Vt sigma, and PPA score.
Replay aspect ratio, bias class, and wafer location to compare anisotropy, selectivity, CD bias, and pass-probability proxy.
Replay aspect ratio, wafer zone, and normalized bias class to see why etch uncertainty grows across the wafer instead of staying constant.
Replay DRC and LVS issue classes as evidence cards with report confidence, triage priority, likely root cause, and safe next check.
Replay STT/SOT labels, thermal barrier, and pulse width to compare write energy, switch probability, read margin, retention, and disturb risk.
Replay roughness, stiffness spread, and particle state to map a mechanical-readiness band with metrology uncertainty.
Replay SET/RESET pulse proxies, retention time, drift coefficient, and read margin so PCM is taught as a window-and-drift problem, not one ideal resistance ratio.
Replay compliance, cycling, temperature, selector on/off ratio, and LRS/HRS spread to see why ReRAM is a variability and array-read problem.
Replay layer group, program/erase cycles, retention time, and read-retry steps to connect 3D NAND stack variation with threshold overlap and ECC margin.
Replay pattern density, feature width, overpolish proxy, and pad age to connect layout density with dishing, erosion, nonuniformity, and planarization evidence.
Replay architecture, channel stressor, stress proxy, and temperature to compare mobility gain, drive-current gain, Vt shift, leakage, and mechanical deformation risk.
Replay VDD, temperature, load, and path depth to connect Liberty-style delay terms with setup slack, hold slack, and timing-report criticality.
Filter treatment, dose, temperature, and ALD cycles to inspect nucleation delay, thickness, uniformity, capacitance, and leakage-risk teaching proxies.
Filter anneal method, temperature, time, and implant dose to inspect activation, diffusion, sheet resistance, Vt shift, and FO4-delay teaching proxies.
Filter chemistry, pressure, RF power, and overetch to inspect etch-rate, CD-bias, LER, DIBL, and inverter-delay teaching proxies.
Filter tiny design, utilization, clock target, and buffering strategy to inspect WNS, congestion, route-risk, area, and power teaching proxies before a real reproducible flow.
A browser CSV lab connecting surface/contact preparation, silicide anneal, contact area, activation proxy, Rc/Rsd proxy, ring oscillator delay proxy, and SRAM bitline delay proxy.
Filter tiny RTL seeds, utilization, target clock, and routing effort to inspect WNS, TNS, congestion, marker-count, area, wirelength, and power proxy report fields before a real rights-cleared flow.
A browser CSV replay of 864 verified PDK-free ngspice cases connecting mux ratio, pass-device scale, shared sense/I/O load, write-path off-state, transfer efficiency, and output latency.
A browser CSV replay that separates mean etch response, spatial uncertainty, CD-loss risk, selectivity proxy, and acquisition priority without exposing a process recipe.
A browser CSV lab for reading DRC, LVS, PEX, and timing-handoff checkpoints as evidence, with public-safe SKY130 source anchors and no PDK collateral on the site.
A browser CSV lab that links post-lithography CD and overlay observations to downstream etch correction, post-etch CD, Cpk proxy, delay proxy, and role-specific evidence gates.
A browser CSV lab that connects layout wire length, layer class, route style, load class, and checkpoint stage to RC, delay, slew, slack-risk, and evidence-state proxies.
A browser CSV lab for sparse semiconductor metrology: compare module context, sample plan, data age, sensor health, physical metrology fraction, and model family before trusting a prediction.
A browser CSV lab for memory-system partitioning: compare workload traffic, HBM stack class, base-die controller/PHY/RAS placement, interposer budget, thermal class, capacity, bandwidth, energy, and yield risk before calling an HBM plan feasible.
A browser CSV lab for advanced-device pathfinding: compare lateral GAA, forksheet, monolithic CFET, and sequential CFET choices against contact resistance, local interconnect capacitance, via alignment, thermal coupling, parasitic delay, energy, integration risk, and density gain before making a PPAC claim.
A browser CSV lab for wide-bandgap device pathfinding: compare semi-insulating SiC, high-resistivity SiC, GaN-on-Si, and bonded GaN-SiC watch cases against buffer traps, RF loss, thermal path, dynamic Ron, breakdown margin, package heat path, reliability review, and application fit.
A browser CSV lab for physical-design report literacy: compare utilization, aspect ratio, macro channel pressure, PDN strategy, clock topology, and report stage against placement overflow, RUDY-style congestion, global-route overflow, IR-drop risk, current-density risk, skew, insertion delay, timing-slack risk, and the next safe evidence check.
A browser CSV replay that keeps temperature, retention-tail cells, refresh policy, activation pressure, RowHammer disturbance risk, ECC coverage, thermal stress, and next evidence check in one table.
A browser CSV replay that compares SRAM, DRAM, HBM, NAND, MRAM, FeFET, ReRAM, PCM, SCM, embedded NVM, and CIM-style memory across placement, reliability, integration, and evidence maturity.
A browser CSV replay for reading standard-cell drive strength, input slew, output load, pin capacitance, area, setup/hold slack, and report-stage evidence without copying libraries or running EDA tools.
A browser CSV replay for reading GaN dynamic-Ron evidence as stress class, drain bias, buffer context, recovery window, temperature, current collapse, and measurement caution move together.
A browser CSV replay for reading process-control evidence as signal quality, FDC state, VM uncertainty, sampling coverage, feedforward handoff, false-alarm risk, and role review move together.
A browser CSV replay for reading TCAD-style design-of-experiments, surrogate uncertainty, extrapolation risk, validation posture, and decision gates before treating an optimizer output as evidence.
A browser CSV replay for comparing electrostatic control, footprint, contacts, capacitance, variability, thermal coupling, integration risk, evidence maturity, and circuit handoff without turning an architecture roadmap into a universal ranking.
A browser replay that aligns clock-tree timing, route completion and RC, power-grid pressure, checkpoint maturity, owner view, and replacement evidence without running a live flow or implying signoff.
A browser replay that separates model assumptions, cell characterization, implementation evidence, test-structure intent, measurement availability, discrepancy review, provenance, uncertainty, and claim maturity without borrowing an external project's data.
A browser replay for crossed, nested, unbalanced, and confounded measurement-study designs that keeps part spread, repeatability, operator/tool/interaction reproducibility, bias, linearity, stability, resolution, uncertainty review, discrimination, and next evidence checks separate.
A browser replay connecting photon energy, bounded LED/laser logic, ideal detector responsivity, an all-pass ring, and MZI phase transfer while exposing every missing material, solver, coupling, and measurement layer.
Compare intrinsic complex S-parameters with passive fixture embedding, four correction classes, residual-error sensitivity, stability/passivity screens, fT/fmax proxies, and a bounded noise-parameter equation.
Trace original channel and contact hypotheses through local RC, extraction and compact-model maturity, inverter/ring/logic contexts, contradiction flags, and owned replacement evidence before any PPA claim.
Trace declared geometry and current distribution through edge/constriction pressure, illuminated or dark context, mechanism ambiguity, metrology lineage, uncertainty, contradictions, and owned replacement evidence without issuing detector design or operating guidance.
Trace declared device tiers and oxide-semiconductor access transport through contacts, inter-tier connectivity, WL/BL loading, thermal budget, extraction maturity, cell/subarray sensitivities, contradictions, and owned replacement evidence without copying a topology or issuing a node, architecture, or signoff claim.
Separate rectification, consecutive negative slope, peak/valley prominence, overlap-window shape, broadening, series/contact burden, sweep history, trap-memory contradiction, mechanism ambiguity, and owned replacement evidence without fitting or reproducing a published device.
Trace normalized thermoelectric response through series-junction scaling, reference-junction correction, drift, mechanical hysteresis, cross-sensitivity, repeatability, uncertainty, contradiction review, and owned replacement-evidence gates without importing a physical calibration function or measured sensor result.
Compare directional RIE etch and sputter trench deposition across aspect ratio, incident angle, species mix, surface interaction, reflection, secondary transport, progress, conservation, profile risk, and owned replacement-evidence gates without importing a physical recipe or named-tool result.
Compare bounded CCP and ICP reference archetypes across normalized drive, pressure regime, substrate bias, gas response, wall loss, matching state, radial zone, ion and neutral delivery, IEDF/IADF breadth, nonuniformity, role gates, and the restricted feature-scale handoff without exposing a recipe or equipment action.
Compare flow-model context, admitted gas-load state, wall-source burden, chamber and foreline inventory, conductance, nominal and effective pumping, settling, distribution, role gates, and the four-field CCP/ICP handoff without exposing a physical recipe, equipment command, or safety procedure.
Compare dielectric-like and conductor-like teaching contexts across ion drive, neutral reactivity, passivation, directionality, mask resilience, feature access, ordered response, six mechanism regimes, exact ledgers, role gates, and a bounded feature-profile handoff without exposing a physical chemistry, process recipe, equipment action, or named-tool prediction.
Follow bounded process variation families through device characterization, circuit margin, reliability and yield observations, three exact ledgers, four accountable role views, upstream packet postures, and a human-reviewed public-atlas gate without claiming physical causality, signoff, qualification, or production fitness.
Move across HAR profile evolution, atomic-layer etch, selective etch, DRIE, strip and ash, and wet etch using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, and replacement-evidence questions.
Move across PVD, CVD and PECVD, ALD and PEALD, LPCVD and furnace chains, epitaxy, selective deposition, and electrochemical gap-fill using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, and replacement-evidence questions.
Move across mask and reticle, substrate and wafering, scanner and track, ion implant, thermal processing, clean and surface preparation, and CMP using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, and replacement-evidence questions.
Move across endpoint sensors, inspection and metrology, chamber-state FDC, and edge, bevel, and backside evidence using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, traceability boundary, and accountable replacement-evidence questions.
Move across cluster-tool routing, facility and abatement, and equipment-sustainability evidence using one bounded review surface. Each family preserves its own controls, normalized proxies, exact ledgers, source spine, role gates, traceability boundary, accounting boundary, and accountable replacement-evidence questions.
Move across bonding and interfaces, thinning and dicing, wafer probe and test, and fan-out or panel packaging using one bounded review surface. Every family keeps its own controls, normalized proxies, exact ledgers, source spine, role gates, traceability boundary, and accountable replacement-evidence questions.
Two edges can move together, apart, or independently. Inspect how that relationship changes linewidth and local-CD variation before any bounded device or SRAM teaching proxy.
Separate what moved from what was missing. Inspect fixed condition, lot, wafer, spatial, local-mismatch, noise, and coverage effects before interpreting an SRAM margin proxy.
A solved run is one status, not the whole evidence chain. Compare timestep, tolerance, initial state, saved signals, metric definitions, and a deliberate singular operating point without promoting convergence to validity or signoff.
Move from LER/LWR bandwidth and finite sampling to hierarchical SRAM variation, plasma-etch uncertainty, Gauge R&R, and hybrid-bonding metrology without mixing quantity, grain, denominator, or evidence class.
Move from planar, fin, and nanosheet geometry to Ioff normalization, gm/Id, synthetic TLM, contact-drop bookkeeping, model residuals, corner semantics, and SPICE layer separation without hiding the metric contract.
Trace seven emerging-device and memory topics across mechanism, integration, measurement, reliability, and readiness while keeping gaps, contradictions, held candidates, and replacement evidence visible.
RUN CARD POLICY
The site can hold hundreds of simulations because the object contract separates saved execution from future compute. Inspect exact packet states and replay requirements. Real-time SPICE, uploads, accounts, payments, comments, newsletters, and submissions stay disabled in this MVP.
Browse curated simulation objects / Replay saved datasets and browser plots / Open linked labs and lessons / Download public evidence files, netlists, scripts, and source notes / release-level public provenance
No server-side live ngspice execution / No accounts or learner profiles / No uploads / No payments or purchase flow / No comments / No newsletter signup / No job or event submission
EXPORT / METHODS / LIMITS / EVIDENCE
The same six sections keep lecture users and paper-writing users aligned: explore the phenomenon, inspect the run card, export files, read the method, keep the limits, and cite the evidence.
Choose the simulation object and inspect the main observable first.
Conditions, knobs, outputs, and precomputed-only notice.
Datasets, netlists, scripts, and source notes stay downloadable.
Extraction rules explain how each metric was made.
Non-claims prevent teaching data from being reused as signoff evidence.
Traceable artifacts keep the result reviewable and citable.