120 nm/minMax teaching rateUNKNOWNInspect metric contract
80 nm/minBalanced density rateUNKNOWNInspect metric contract
+/-2.56%Radial nonuniformityUNKNOWNInspect metric contract
SIMULATION / SA-PROC-BEOL-CMP-PLANAR-001
CMP removal and planarization
CMP Planarization
Replay Preston-style removal, pattern-density warnings, radial nonuniformity, and endpoint margin before citing a CMP result.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Use the pressure and relative-velocity grid to see the removal-rate dependency.
- Compare pattern-density cases before assuming blanket rate predicts topography.
- Read radial nonuniformity and endpoint margin as evidence boundaries, not process-control proof.
RUN CARD
Conditions before conclusions.
The public page replays saved CMP teaching data. It does not run slurry recipes, endpoint controllers, or wafer qualification.
Primary knobs
- Pressure: 20 kPa to 40 kPa
- Relative velocity: 0.6 m/s to 1.0 m/s
- Pattern density: 20%, 50%, and 80%
- Radial removal samples: center and edge markers
Saved outputs
- Preston-style removal-rate grid
- dishing and erosion examples
- radial nonuniformity table
- endpoint-margin note
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-cmp-planarization-web-v1.json
Open file ->Model script
/data/process_front_end_models.py
Open file ->Process model card
/data/process-front-end-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Use pressure times relative velocity as a Preston-style teaching grid.
Keep this method attached when reusing the figure or metric.
Keep pattern-density examples separate from blanket removal-rate arithmetic.
Keep this method attached when reusing the figure or metric.
Compute wafer-level nonuniformity from radial normalized-removal samples.
Keep this method attached when reusing the figure or metric.
Treat endpoint margin as a visible boundary, not a deployed controller.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No slurry chemistry, pad asperity model, conditioner state, carrier pressure map, temperature, endpoint sensor, or material stack calibration is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No copper/barrier/oxide selectivity qualification, damascene recipe, wafer qualification, facility setting, or production endpoint claim is implied.
Carry this boundary into any derivative note, paper draft, or slide.
No yield, defectivity, scratch, corrosion, erosion-control, or manufacturing-control claim is made.
Carry this boundary into any derivative note, paper draft, or slide.
Measured blanket rates, patterned-wafer metrology, endpoint traces, and rights-clean process notes are required before calibrated claims.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves the removal-rate grid, pattern-density table, radial samples, and endpoint boundary.
SA-PROC-BEOL-CMP-PLANAR-001
The model card states that CMP replay is not a slurry, pad, or endpoint recipe.
SA-PROC-BEOL-CMP-PLANAR-001
Public MIT CMP and process-variation sources anchor the removal and nonuniformity vocabulary.
SA-PROC-BEOL-CMP-PLANAR-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
MIT CMP erosion model paperPublic CMP modeling paper discussing Preston-equation removal framing, wafer-level nonuniformity, pattern geometry, and erosion.MIT OCW semiconductor process variationPublic process-variation context for temporal, spatial, wafer-level, chip-level, and feature-level variation.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.