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LESSON PACKET / SA-PROC-002

Process fundamentals.
Conditions become claims.

Oxidation, lithography, etch, CMP, and ion implantation belong in one starter pack because each converts a tool condition into a measurable material or pattern result.

lessonProcess ChainobjectsSimulation BundlepublicSource SpineroadmapData To Collect

PROCESS CHAIN

Teach the observable before teaching the recipe.

The MVP stays recipe-free. It teaches which observable must accompany the process claim: thickness, CD, profile, nonuniformity, endpoint margin, projected range, and activation.

01 / THERMAL / OXIDATION

Thermal budget is evidence, not background.

Oxide thickness, consumed silicon, and diffusion broadening all move with time and temperature. A process claim needs those markers attached before the number travels.

43 nm dry / 174 nm wet / open simulation ->
02 / LITHOGRAPHY

A printed CD needs a window.

The nominal critical dimension is not enough. Dose and focus latitude determine whether the pattern is robust or just lucky at the center point.

18 / 25 pass points / open simulation ->

SIMULATION BUNDLE

Researchers can start at the data card.

Each object carries Explore, Run Card, Export, Methods, Limits, and Evidence. The lecture gives the story; the simulation page carries the reusable artifact.

Process / live-precomputed

Thermal oxidation and diffusion budget

Compare dry and wet oxidation growth, silicon consumption, and diffusion broadening before treating thermal steps as reusable evidence.

Open Oxidation Budget ->
Process / live-precomputed

Photolithography exposure and focus window

Replay a dose/focus matrix to see why a printed CD is only useful when the process window and variation boundary are visible.

Open Litho Window ->
Process / live-precomputed

Etch selectivity and profile

Compare isotropic, directional, and low-selectivity etch cases to keep mask budget, CD loss, and sidewall profile attached.

Open Etch Profile ->
Process / live-precomputed

CMP removal and planarization

Replay Preston-style removal, pattern-density warnings, radial nonuniformity, and endpoint margin before citing a CMP result.

Open CMP Planarization ->
Process / live-precomputed

Ion implantation and anneal activation

Replay projected range, straggle, activation, and diffusion broadening to keep doping evidence separate from a recipe.

Open Implant Anneal ->
Process / live-precomputed

Lithography focus-exposure process window

Replay focus, exposure, CD-error proxy, overlay proxy, and pass/fail window to explain process windows without scanner recipes.

Open Litho Window ->
Process / live-precomputed

Plasma etch UQ profile window

Replay aspect ratio, bias class, and wafer location to compare anisotropy, selectivity, CD bias, and pass-probability proxy.

Open Etch UQ ->
Process / live-precomputed

CMP pattern-density dishing and erosion replay

Replay pattern density, feature width, overpolish proxy, and pad age to connect layout density with dishing, erosion, nonuniformity, and planarization evidence.

Open CMP Dishing ->
Process / live-browser-interactive

Etch CD bias to DIBL and delay interactive lab

Filter chemistry, pressure, RF power, and overetch to inspect etch-rate, CD-bias, LER, DIBL, and inverter-delay teaching proxies.

Open Etch CD Chain ->

SOURCE SPINE

Public sources anchor the vocabulary.

These links are teaching anchors. They do not authorize recipe copying, restricted manual redistribution, or qualification claims.

source

MIT OCW 6.152J Micro/Nano Processing Technology

https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/

Open source ->
source

MIT OCW 6.152J lecture notes

https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/pages/lecture-notes/

Open source ->
source

MIT OCW 6.774 readings

https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/pages/readings/

Open source ->
source

MIT OCW 6.152J dry etching lecture

https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/59b9f31d836355a3380aa156925508bc_lecture17.pdf

Open source ->
source

MIT CMP erosion model paper

https://web.mit.edu/cmp/publications/papers/noh_final.pdf

Open source ->
source

MIT OCW semiconductor process variation

https://ocw.mit.edu/courses/2-830j-control-of-manufacturing-processes-sma-6303-spring-2008/resources/2-semiconductor-process-variation/

Open source ->

DATA TO COLLECT NEXT

Better process lessons need measured, rights-clean evidence.

The next upgrade is not secret recipes. It is public-safe metrology with uncertainty, conditions, and redistribution rights attached.

needed

Ellipsometry oxide-thickness summaries with ambient, time, and uncertainty

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

needed

Focus-exposure matrices with CD-SEM or optical metrology notes

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

needed

Etch cross-sections with mask budget, CD loss, and endpoint context

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

needed

CMP blanket-rate and patterned-wafer summaries with dishing and erosion metrics

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

needed

SIMS, sheet-resistance, or activation summaries for implant and anneal examples

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

needed

Redistribution rights and public-safe process boundaries for every uploaded figure

Store the data with measurement method, uncertainty, process boundary, source rights, and non-claims.

Public boundary

No live tool operation, recipe upload, account workflow, payment, comment, newsletter signup, job/event submission, or facility credential collection is active in this MVP.