45 nmBalanced RIE mask leftUNKNOWNInspect metric contract
48 nmWet etch CD lossUNKNOWNInspect metric contract
3:1 to 30:1Selectivity spanUNKNOWNInspect metric contract
SIMULATION / SA-PROC-FEOL-ETCH-PROFILE-001
Etch selectivity and profile
Etch Profile
Compare isotropic, directional, and low-selectivity etch cases to keep mask budget, CD loss, and sidewall profile attached.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Compare CD loss between isotropic and directional cases.
- Check how much mask remains after the same vertical clear target.
- Use the sidewall angle and selectivity together rather than judging an etch by one number.
RUN CARD
Conditions before conclusions.
The public page replays saved etch profile data. It does not operate wet benches, plasma tools, endpoint systems, or recipes.
Primary knobs
- Target film thickness: 100 nm
- Overetch: 20%
- Mask start thickness: 60 nm
- Profile family: wet isotropic, directional RIE, physical low-selectivity etch
Saved outputs
- vertical etched depth
- lateral undercut and CD loss
- mask loss and mask remaining
- sidewall angle and selectivity table
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-etch-selectivity-profile-web-v1.json
Open file ->Model script
/data/process_front_end_models.py
Open file ->Process model card
/data/process-front-end-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Use target thickness plus overetch to set the displayed vertical etched depth.
Keep this method attached when reusing the figure or metric.
Compute symmetric CD loss as two times lateral undercut.
Keep this method attached when reusing the figure or metric.
Compute mask remaining from mask start thickness and selectivity-limited mask loss.
Keep this method attached when reusing the figure or metric.
Separate directionality from selectivity so users can compare profile and mask budget independently.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No chemistry, pressure, plasma density, ion energy, bias power, endpoint trace, microloading, ARDE, or residue is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No material-specific etch rate, selectivity calibration, chamber season, or metrology uncertainty is included.
Carry this boundary into any derivative note, paper draft, or slide.
No recipe, tool operation, wafer qualification, facility setting, or production etch recommendation is implied.
Carry this boundary into any derivative note, paper draft, or slide.
Measured cross-sections, CD-SEM data, endpoint logs, and rights-clean process context are required before calibrated claims.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves each etch family with mask, CD, sidewall, and selectivity markers.
SA-PROC-FEOL-ETCH-PROFILE-001
The model card prevents the profile replay from being reused as a facility instruction.
SA-PROC-FEOL-ETCH-PROFILE-001
Public MIT OCW etch material anchors the directional/selective vocabulary.
SA-PROC-FEOL-ETCH-PROFILE-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.