0.7728Highest pass-probability proxyUNKNOWNInspect metric contract
AR 1 / mid / centerBest caseUNKNOWNInspect metric contract
27 casesSweep rowsUNKNOWNInspect metric contract
SIMULATION / SA-PROC-008-PLASMA-ETCH-UQ-001
Plasma etch UQ profile window
Etch UQ
Replay aspect ratio, bias class, and wafer location to compare anisotropy, selectivity, CD bias, and pass-probability proxy.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Read anisotropy, selectivity, and CD bias together before calling an etch condition good.
- Use wafer location to keep uniformity visible.
- Treat uncertainty as part of the process-window evidence, not an afterthought.
RUN CARD
Conditions before conclusions.
This page replays saved plasma etch data and does not run a plasma tool, chamber model, recipe, or endpoint workflow.
Primary knobs
- Feature aspect ratio
- Bias class
- Wafer location
Saved outputs
- Anisotropy index
- Selectivity proxy
- CD bias
- Pass-probability proxy
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/plasma-etch-uq-profile-window-web-v1.json
Open file ->Dataset CSV
/data/plasma-etch-uq-profile-window-v64.csv
Open file ->v64 deep simulation summary CSV
/data/v64-deep-simulations-summary.csv
Open file ->v64 deep model script
/data/v64_deep_semiconductor_sims.mjs
Open file ->v64 deep model card
/data/v64-deep-simulations-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Anisotropy increases with bias class and degrades with aspect ratio and location penalty.
Keep this method attached when reusing the figure or metric.
Selectivity falls as bias class and aspect ratio rise.
Keep this method attached when reusing the figure or metric.
Pass-probability proxy combines anisotropy, selectivity, and CD-bias penalties.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No gas chemistry, pressure, RF power, chuck temperature, endpoint, mask stack, tool model, or recipe is represented.
Carry this boundary into any derivative note, paper draft, or slide.
No equipment instruction, fab integration, EHS, or production process claim is made.
Carry this boundary into any derivative note, paper draft, or slide.
Real etch work needs DOE, CD-SEM, profile metrology, selectivity measurement, wafer maps, and process-owner review.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
v64 deep results store every aspect-ratio, bias, location, anisotropy, selectivity, CD-bias, and pass-probability row.
SA-PROC-008-PLASMA-ETCH-UQ-001
CSV export preserves the etch UQ response table.
SA-PROC-008-PLASMA-ETCH-UQ-001
The process domain uses this card as a virtual-fab abstraction, not tool operation.
SA-PROC-008-PLASMA-ETCH-UQ-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.