18 / 25Passing grid pointsUNKNOWNInspect metric contract
0 nmNominal CD errorUNKNOWNInspect metric contract
5 x 5Dose/focus gridUNKNOWNInspect metric contract
SIMULATION / SA-PROC-FEOL-LITHO-WINDOW-001
Photolithography exposure and focus window
Litho Window
Replay a dose/focus matrix to see why a printed CD is only useful when the process window and variation boundary are visible.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Scan the dose/focus grid before trusting the nominal CD.
- Compare the center point against edge-of-window cases where CD error approaches the tolerance.
- Use the pass mask to separate acceptable process latitude from a single pretty number.
RUN CARD
Conditions before conclusions.
The public page replays saved process-window data. It does not run scanner models, upload masks, or qualify lithography recipes.
Primary knobs
- Dose: 80 mJ/cm2 to 120 mJ/cm2
- Focus: -0.30 um to +0.30 um
- Nominal CD: 100 nm
- Pass rule: absolute CD error <= 10 nm
Saved outputs
- CD error matrix
- process-window pass mask
- nominal dose/focus marker
- variation-boundary notes
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-lithography-window-web-v1.json
Open file ->Model script
/data/process_front_end_models.py
Open file ->Process model card
/data/process-front-end-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Treat every dose-focus pair as a saved teaching point.
Keep this method attached when reusing the figure or metric.
Classify a point as passing when absolute CD error is 10 nm or lower.
Keep this method attached when reusing the figure or metric.
Keep CD error and pass classification separate in the evidence file.
Keep this method attached when reusing the figure or metric.
Use the matrix as a vocabulary bridge before measured FEM data are added.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No photoresist chemistry, post-exposure bake, development kinetics, OPC, RET, mask error, or line-edge roughness is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No scanner NA, illumination source, overlay, reticle inspection, stochastic defect, or metrology calibration is included.
Carry this boundary into any derivative note, paper draft, or slide.
No production process window, yield claim, facility setting, or qualified lithography recipe is implied.
Carry this boundary into any derivative note, paper draft, or slide.
Measured focus-exposure matrices and rights-clean CD metrology are required before calibrated claims.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves the CD-error matrix, pass mask, and process-window rule.
SA-PROC-FEOL-LITHO-WINDOW-001
The model card keeps scanner, resist, and mask claims explicitly out of scope.
SA-PROC-FEOL-LITHO-WINDOW-001
Public MIT OCW sources support the process-window and process-variation vocabulary.
SA-PROC-FEOL-LITHO-WINDOW-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.