108 casesRowsUNKNOWNInspect metric contract
16.29-25.76 psDelay proxy rangeUNKNOWNInspect metric contract
tradeoff scatterInteraction modeUNKNOWNInspect metric contract
SIMULATION / SA-PROC-INT-ETCH-CD-DEVICE-001
Etch CD bias to DIBL and delay interactive lab
Etch CD Chain
Filter chemistry, pressure, RF power, and overetch to inspect etch-rate, CD-bias, LER, DIBL, and inverter-delay teaching proxies.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Read etch as a profile and CD transfer problem before treating it as an isolated rate number.
- Connect CD bias and LER proxies to DIBL and inverter-delay proxies.
- Use the page to teach why integration view has to connect pattern transfer with device and circuit outcomes.
BROWSER INTERACTIVE LAB
Filter the saved CSV. Inspect matching replay rows.
No server solver is running here. The browser filters a precomputed table and redraws the plot locally.
Loading replay rowsReading the saved CSV in this browser.
cd bias nm proxydibl mv per v proxyinverter delay ps proxy
Each metric is normalized independently for shape inspection. Vertical positions do not compare magnitude across metrics.
n/acd bias nm proxy
n/adibl mv per v proxy
n/ainverter delay ps proxy
Change one or more controls to find a saved row. No unrelated CSV value is substituted.
| chemistry | pressure mtorr | rf power w | overetch pct | cd bias nm proxy | ler nm proxy | dibl mv per v proxy | inverter delay ps proxy |
|---|---|---|---|---|---|---|---|
| Loading saved replay rows... | |||||||
RUN CARD
Conditions before conclusions.
The browser filters the saved CSV and redraws local plots. It does not run a plasma etch recipe, endpoint flow, equipment-control workflow, TCAD deck, or signoff circuit model.
Primary knobs
- Chemistry class
- pressure
- RF power
- overetch percentage
Saved outputs
- etch-rate proxy
- selectivity proxy
- sidewall angle
- CD bias
- LER
- DIBL
- inverter delay proxy
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Interactive CSV
/data/interactive-etch-cd-device-delay-chain-v1.csv
Open file ->Interactive seed catalog
/data/interactive-lab-seed-catalog-v1.json
Open file ->Process view matrix
/data/process-module-view-matrix-v1.json
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Chemistry classes carry rate, selectivity, and anisotropy teaching coefficients, not tool-specific process settings.
Keep this method attached when reusing the figure or metric.
CD bias, sidewall angle, and LER proxies are generated from pressure, RF, and overetch dimensions for browser replay.
Keep this method attached when reusing the figure or metric.
Device and circuit proxies are derived from effective gate length, DIBL, and capacitance terms for teaching chain logic.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
Browser-side filtering and nearest-row replay only; no live server solver is active.
Carry this boundary into any derivative note, paper draft, or slide.
Teaching proxy data only; not a process recipe, calibrated device model, or product qualification result.
Carry this boundary into any derivative note, paper draft, or slide.
No equipment-control workflow, PDK ingestion, private process data, upload, account, payment, comment, newsletter, or job/event workflow is enabled.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The CSV preserves every chemistry, pressure, RF, overetch, CD, DIBL, and delay proxy used by the browser lab.
SA-PROC-INT-ETCH-CD-DEVICE-001
The page is suitable for comparing directionality of tradeoffs, not for selecting etch settings.
SA-PROC-INT-ETCH-CD-DEVICE-001
The source spine links uncertainty and DTCO context without mirroring copyrighted article text.
SA-PROC-INT-ETCH-CD-DEVICE-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
NIST CHIPS Metrology ProgramMeasurement and fit-for-purpose metrology framing for evidence boundaries.NIST metrology and process control uncertaintyPublic page anchoring uncertainty vocabulary for process-control decisions.TSMC DTCO introductionDesign/process co-optimization vocabulary for integration view.imec STCO overviewSystem-to-technology requirement framing for integration view.Plasma etch heteroscedastic GP UQFuture etch uncertainty direction; no paper text is copied into this page.Process-induced variability DTCO compact modelProcess-variation-to-circuit-metric chain direction; no article body is copied.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.