43 nmDry 40 min oxideUNKNOWNInspect metric contract
174 nmWet 40 min oxideUNKNOWNInspect metric contract
sigma = 86 nmDrive-in broadeningUNKNOWNInspect metric contract
SIMULATION / SA-PROC-FEOL-OXDIFF-001
Thermal oxidation and diffusion budget
Oxidation Budget
Compare dry and wet oxidation growth, silicon consumption, and diffusion broadening before treating thermal steps as reusable evidence.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Compare dry and wet oxidation at the same furnace time.
- Inspect silicon consumed so oxide thickness does not float away from material balance.
- Connect diffusion broadening to accumulated thermal budget before reading any junction claim.
RUN CARD
Conditions before conclusions.
The public page replays saved front-end process data. It does not run TCAD, furnace recipes, or facility process windows.
Primary knobs
- Oxidation ambient: dry O2 versus wet O2 teaching curves
- Furnace time: 5 min to 120 min
- Silicon consumption factor: 0.46 times oxide thickness
- Drive-in time: 10 min to 120 min
Saved outputs
- oxide thickness versus time
- silicon consumed marker
- diffusion sigma and junction-depth table
- front-end model limitations
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-oxidation-diffusion-web-v1.json
Open file ->Model script
/data/process_front_end_models.py
Open file ->Process model card
/data/process-front-end-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Use saved oxide-thickness arrays to compare dry and wet ambient trends.
Keep this method attached when reusing the figure or metric.
Compute silicon consumed as 0.46 times oxide thickness.
Keep this method attached when reusing the figure or metric.
Use square-root-like diffusion broadening only as a first-pass teaching model.
Keep this method attached when reusing the figure or metric.
Keep oxidation and diffusion together because thermal budget accumulates across process steps.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No calibrated Deal-Grove coefficients, furnace loading, stress, bird's-beak geometry, or dopant-enhanced oxidation is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No species-specific diffusion, activation, segregation, electric-field effect, or transient enhanced diffusion is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No recipe, facility setting, wafer qualification, or production process recommendation is implied.
Carry this boundary into any derivative note, paper draft, or slide.
Measured ellipsometry, SIMS, furnace logs, and rights-clean metrology are required before calibrated claims.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves dry and wet oxidation arrays, silicon-consumption math, and diffusion broadening.
SA-PROC-FEOL-OXDIFF-001
The model card states the process boundary before any recipe-level interpretation.
SA-PROC-FEOL-OXDIFF-001
Public MIT OCW sources anchor the educational vocabulary without qualifying the replay as a process.
SA-PROC-FEOL-OXDIFF-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
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