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SIMULATION / SA-PROC-FEOL-IMPLANT-ANNEAL-001

Ion implantation and anneal activation
Implant Anneal

Replay projected range, straggle, activation, and diffusion broadening to keep doping evidence separate from a recipe.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Compare projected range and straggle as implant energy increases.
  • Inspect the nominal 50 keV profile before reading any junction claim.
  • Use anneal cases to see activation and diffusion broadening as a tradeoff.
Open visual lab ->Open lesson ->

RUN CARD

Conditions before conclusions.

The public page replays saved implant/anneal data. It does not run SRIM, TCAD, implant recipes, or anneal recipes.

precomputed replay

Primary knobs

  • Implant energy: 20, 50, and 100 keV
  • Dose: 1e13 cm-2 teaching scale
  • Anneal temperature: 850 C to 1050 C
  • Anneal time: 10 s
outputs

Saved outputs

  • projected range and straggle table
  • nominal normalized profile samples
  • activation percentage
  • diffusion broadening and sheet-resistance proxy

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/process-implant-anneal-web-v1.json

Open file ->
download

Model script

/data/process_front_end_models.py

Open file ->
download

Process model card

/data/process-front-end-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Represent each implant energy with projected range, straggle, and peak concentration markers.

Keep this method attached when reusing the figure or metric.

method

Use one normalized 50 keV profile for browser plotting and reading-card review.

Keep this method attached when reusing the figure or metric.

method

Separate activation percentage from diffusion broadening.

Keep this method attached when reusing the figure or metric.

method

Keep the route educational until SRIM, TCAD, SIMS, sheet-resistance, and rights-clean calibration data are available.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No species-specific stopping, channeling, tilt/rotation, screen oxide, dose-rate effect, amorphization, damage, clustering, or solid-solubility limit is modeled.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No transient enhanced diffusion, diffusion/activation coupling, junction leakage, or device-threshold prediction is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No implant recipe, anneal recipe, facility setting, wafer qualification, or production doping recommendation is implied.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Calibrated claims require SRIM/TCAD settings, SIMS profiles, electrical activation data, and redistribution rights.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

The dataset preserves projected range, straggle, peak concentration, normalized profile, and anneal cases.

SA-PROC-FEOL-IMPLANT-ANNEAL-001

evidence note

The model card keeps implant and anneal recipes outside the public MVP.

SA-PROC-FEOL-IMPLANT-ANNEAL-001

evidence note

Public MIT OCW sources anchor the implantation, annealing, and diffusion vocabulary.

SA-PROC-FEOL-IMPLANT-ANNEAL-001

Source spine

These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.

MIT OCW 6.774 readingsPublic reading map for ion implantation, annealing, diffusion, transient enhanced diffusion, and profile measurement topics.MIT OCW 6.152J lecture notesPublic lecture-note index listing diffusion/implantation as part of micro/nano processing technology.

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.