50.4 ohm/sqMap meanUNKNOWNInspect metric contract
+/-3.97%NonuniformityUNKNOWNInspect metric contract
25 pointsMap sitesUNKNOWNInspect metric contract
SIMULATION / SA-PROC-METRO-4PP-SHEETR-001
Four-point probe sheet resistance
4PP Sheet R
Replay a wafer-level sheet-resistance map and compute nonuniformity before treating a process split as electrically stable.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Scan the center, edge, and corner values before accepting the mean.
- Compare half-range nonuniformity against the center-to-corner spread.
- Use the map structure as a template for future measured sheet-resistance evidence kept offline.
RUN CARD
Conditions before conclusions.
The public page replays saved map data. It does not operate a probe station, accept wafer uploads, or release a process.
Primary knobs
- Grid: 5 x 5 saved teaching sites
- Observable: sheet resistance in ohm/sq
- Derived metric: half-range nonuniformity
- Boundary: no probe-spacing or edge correction
Saved outputs
- sheet-resistance map
- mean, min, max, and center marker
- center-to-corner spread
- public metrology limitations
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-four-point-probe-sheet-resistance-web-v1.json
Open file ->Model script
/data/process_metrology_models.py
Open file ->Metrology model card
/data/process-metrology-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Treat each grid site as a saved sheet-resistance measurement point.
Keep this method attached when reusing the figure or metric.
Compute the map mean across all teaching sites.
Keep this method attached when reusing the figure or metric.
Compute half-range nonuniformity from max, min, and mean sheet resistance.
Keep this method attached when reusing the figure or metric.
Read spatial variation before making any material or implant conclusion.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No probe-spacing correction, edge correction, contact force, temperature coefficient, film-thickness correction, or tool calibration is included.
Carry this boundary into any derivative note, paper draft, or slide.
No qualified metrology, facility procedure, wafer acceptance, process recipe, or production uniformity claim is implied.
Carry this boundary into any derivative note, paper draft, or slide.
Real review requires raw logs, uncertainty, calibration status, wafer coordinates, and material context.
Carry this boundary into any derivative note, paper draft, or slide.
This replay is not evidence of a SemiAgora-processed wafer.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves the full 25-site teaching map and summary statistics.
SA-PROC-METRO-4PP-SHEETR-001
The model script recomputes mean and half-range nonuniformity.
SA-PROC-METRO-4PP-SHEETR-001
NIST sheet-resistance mapping sources anchor the metrology vocabulary.
SA-PROC-METRO-4PP-SHEETR-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.