144saved chain rowsUNKNOWNInspect metric contract
3surface statesUNKNOWNInspect metric contract
4contact-area pointsUNKNOWNInspect metric contract
0live server runsUNKNOWNInspect metric contract
SIMULATION / SA-PROC-CHAIN-CONTACT-001
Contact resistance to delay interactive chain
Contact Rc Chain
A browser CSV lab connecting surface/contact preparation, silicide anneal, contact area, activation proxy, Rc/Rsd proxy, ring oscillator delay proxy, and SRAM bitline delay proxy.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Filter by surface preparation and compare how contact resistance proxy moves relative to leakage-risk proxy.
- Sweep silicide anneal temperature and anneal time to see why lower Rc can still carry diffusion or leakage caution.
- Compare contact area against ring oscillator delay proxy and SRAM bitline delay proxy to separate resistance and capacitance effects.
- Use the measured replacement slots before citing any chain row as engineering evidence.
BROWSER INTERACTIVE LAB
Filter the saved CSV. Inspect matching replay rows.
No server solver is running here. The browser filters a precomputed table and redraws the plot locally.
Loading replay rowsReading the saved CSV in this browser.
contact resistance ohm um proxyring osc delay ps proxybitline rc delay ps proxy
Each metric is normalized independently for shape inspection. Vertical positions do not compare magnitude across metrics.
n/acontact resistance ohm um proxy
n/aring osc delay ps proxy
n/abitline rc delay ps proxy
Change one or more controls to find a saved row. No unrelated CSV value is substituted.
| lab id | surface prep | silicide anneal c | anneal time s | contact area nm2 | contact resistance ohm um proxy | rsd ohm um proxy | ring osc delay ps proxy | bitline rc delay ps proxy | yield risk proxy |
|---|---|---|---|---|---|---|---|---|---|
| Loading saved replay rows... | |||||||||
RUN CARD
Conditions before conclusions.
The browser filters saved CSV rows and redraws the local plot. It does not run SPICE, TCAD, process equipment, or a server-side optimizer.
Primary knobs
- surface_prep
- silicide_anneal_c
- anneal_time_s
- contact_area_nm2
Saved outputs
- contact_resistance_ohm_um_proxy
- rsd_ohm_um_proxy
- ring_osc_delay_ps_proxy
- bitline_rc_delay_ps_proxy
- sram_read_margin_delta_mv_proxy
- yield_risk_proxy
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Interactive chain CSV
/data/interactive-contact-resistance-delay-chain-v1.csv
Open file ->Web model card JSON
/data/contact-resistance-delay-chain-web-v1.json
Open file ->Process chain backlog JSON
/data/process-device-circuit-chain-backlog-v1.json
Open file ->Process role matrix JSON
/data/process-module-view-matrix-v1.json
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Generate a deterministic factorial sweep over surface preparation, silicide anneal temperature, anneal time, and contact area.
Keep this method attached when reusing the figure or metric.
Map knobs into activation, surface, silicide, and contact-area proxy terms; then compute Rc/Rsd and timing proxies.
Keep this method attached when reusing the figure or metric.
Expose replacement slots for TLM, sheet resistance, Id-Vg, ring oscillator delay, SRAM bitline delay, and uncertainty data.
Keep this method attached when reusing the figure or metric.
Keep all values as original SemiAgora educational proxies until measured data replaces the proxy columns.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No process recipe, gas-ratio recommendation, or equipment-control workflow.
Carry this boundary into any derivative note, paper draft, or slide.
No calibrated contact model, TCAD result, PDK result, measured-silicon result, or product qualification.
Carry this boundary into any derivative note, paper draft, or slide.
No live server solver execution or uploaded wafer/design data.
Carry this boundary into any derivative note, paper draft, or slide.
UV ozone appears only as surface-state vocabulary, not as a contact-module recommendation.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
Generator, verifier, CSV, summary, and model card are stored under PROCESS_DEVICE_CIRCUIT_CHAINS_2026-08-16.
SA-PROC-CHAIN-CONTACT-001
Public source spine anchors contact resistance, DTCO, surface treatment, and metrology uncertainty vocabulary.
SA-PROC-CHAIN-CONTACT-001
The chain backlog names measured replacement slots before any future technical claim is allowed.
SA-PROC-CHAIN-CONTACT-001
The route uses the same Explore / Run Card / Export / Methods / Limits / Evidence contract as the simulation atlas.
SA-PROC-CHAIN-CONTACT-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
NIST metrology and process-control uncertaintyAnchors measurement uncertainty and process-control evidence boundaries.TSMC design-technology co-optimizationAnchors process, device, and design co-optimization vocabulary.imec contact resistance challengeAnchors contact resistance as a scaling limiter that affects downstream electrical behavior.UV ozone pretreatment for ALD nucleationAnchors surface pretreatment and nucleation vocabulary for future chain replacement data.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.