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SASemiAgoraSemiconductor knowledge & engineeringOpen RTA sim

LESSON PACKET / SA-PROC-005

Thermal annealing and RTA.
Heat changes the evidence.

Annealing is where implantation damage, electrical activation, diffusion, contact reaction, and thermal-budget limits collide. The MVP keeps those tradeoffs visible without publishing facility recipes.

lessonThermal ChainobjectsSimulation BundlelabReplay BundlepublicSource SpineroadmapData To Collect

THERMAL CHAIN

Teach the tradeoff before teaching the setting.

For public education, anneal should be framed as evidence: active fraction, diffusion broadening, defect recovery, sheet resistance, and morphology risk. Equipment settings stay outside the MVP.

01 / RTA ACTIVATION

Activation and diffusion compete.

A post-implant anneal makes dopants electrically useful, but the same thermal exposure broadens the depth profile. A useful claim keeps both numbers visible.

91.71% / 16.52 nm / open simulation ->
02 / THERMAL BUDGET

The time-temperature shape matters.

Furnace soak, spike RTA, and millisecond anneal are not interchangeable. Shorter exposure can protect junction abruptness while raising metrology and uniformity risk.

0.36 budget index / open simulation ->
03 / DAMAGE RECOVERY

Repairing damage can also feed TED.

Post-implant damage recovery, activation, and transient enhanced diffusion must be reviewed together before a shallow-junction figure becomes persuasive.

73.0% at t=10 / open simulation ->
04 / SILICIDE CONTACT

A contact anneal has a window.

Under-reaction leaves high resistance; over-anneal raises morphology risk. The teaching card keeps sheet resistance and agglomeration risk side by side.

4.4 ohm/sq / open simulation ->

SIMULATION BUNDLE

Start from the run card if you are writing a paper.

Each object carries Explore, Run Card, Export, Methods, Limits, and Evidence. The lecture gives the causal chain; the simulation page carries the reusable artifact.

Process / live-precomputed

RTA activation and diffusion tradeoff

Replay normalized rapid-thermal-anneal budgets to compare dopant activation, diffusion broadening, and sheet-resistance proxy.

Open RTA Tradeoff ->
Process / live-precomputed

Spike versus furnace thermal budget

Compare furnace soak, spike RTA, and millisecond anneal modes so shallow-junction benefit and temperature-control risk stay visible together.

Open Thermal Budget ->
Process / live-precomputed

Implant damage recovery and TED

Replay post-implant defect recovery, activated fraction, and transient-enhanced-diffusion tail growth on one normalized anneal axis.

Open Damage / TED ->
Process / live-precomputed

Silicide contact anneal window

Replay under-reacted, target-window, and over-annealed contact cases so sheet resistance and morphology risk stay paired.

Open Silicide Window ->
Process / live-precomputed

Anneal activation versus dopant diffusion

Replay temperature and time to compare activation fraction, diffusion length, and a junction tradeoff score without exposing anneal recipes.

Open Anneal Tradeoff ->
Process / live-browser-interactive

Anneal activation to device and FO4 delay interactive lab

Filter anneal method, temperature, time, and implant dose to inspect activation, diffusion, sheet resistance, Vt shift, and FO4-delay teaching proxies.

Open Anneal Chain ->
Process / live-browser-interactive

Contact resistance to delay interactive chain

A browser CSV lab connecting surface/contact preparation, silicide anneal, contact area, activation proxy, Rc/Rsd proxy, ring oscillator delay proxy, and SRAM bitline delay proxy.

Open Contact Rc Chain ->

SOURCE SPINE

Public sources anchor the vocabulary.

These links are teaching anchors. They do not authorize recipe copying, restricted manual redistribution, or qualification claims.

source

MIT OCW 6.152J ion implantation lecture

https://ocw.mit.edu/courses/6-152j-micro-nano-processing-technology-fall-2005/resources/lecture6/

Open source ->
source

MIT OCW 6.774 front-end processing

https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/

Open source ->
source

MIT OCW 6.774 TED lecture page

https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/resources/mit6_774f04_lec15_mp4/

Open source ->
source

MIT OCW 6.774 silicides and contacts

https://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/resources/mit6_774f04_lec22_mp4/

Open source ->
source

Optimal control of rapid thermal annealing

https://web.mit.edu/braatzgroup/70_Optimal_control_of_rapid_thermal_annealing_in_a_semiconductor_process.pdf

Open source ->
source

COMSOL Rapid Thermal Annealing model

https://www.comsol.com/model/rapid-thermal-annealing-504

Open source ->
source

NIST laser annealed arsenic ultrashallow junctions

https://www.nist.gov/publications/deactivation-sub-melt-laser-annealed-arsenic-ultra-shallow-junctions-silicon-during

Open source ->
source

NIST Semiconductor Electronics Division facility summary

https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir6430.pdf

Open source ->

DATA TO COLLECT NEXT

Anneal evidence becomes valuable when metrology is attached.

The next upgrade is rights-clean measurement summaries with uncertainty and non-claims, not secret recipes or facility control settings.

needed

Sheet-resistance maps after implant/anneal splits with dose, species, and measurement method separated from recipe details

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

needed

SIMS depth profiles before and after anneal, with junction-depth extraction rules and uncertainty notes

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

needed

Hall activation or spreading-resistance summaries that separate active carrier density from total chemical dose

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

needed

Defect-recovery evidence such as TEM summaries, leakage metrics, or defect-density proxies with rights-clean source notes

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

needed

Silicide contact-chain, Kelvin, or TLM resistance summaries with line width, contact size, and metrology boundary

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

needed

Temperature-uniformity and calibration notes that are public-safe and do not expose facility operating procedures

Store the data with method, uncertainty, material stack, source rights, and what the result does not prove.

Public boundary

No live tool operation, recipe upload, account workflow, payment, comment, newsletter signup, job/event submission, endpoint control, release dashboard, or facility credential collection is active in this MVP.