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SIMULATION / SA-PROC-THERM-SILICIDE-CONTACT-001

Silicide contact anneal window
Silicide Window

Replay under-reacted, target-window, and over-annealed contact cases so sheet resistance and morphology risk stay paired.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Compare under-reacted, target-window, and over-annealed contact cases.
  • Find the minimum sheet-resistance case before reading agglomeration risk.
  • Use the card to keep contact claims separate from device or interconnect signoff.
Open visual lab ->Open lesson ->

RUN CARD

Conditions before conclusions.

The public page replays saved contact-window data. It does not prescribe a metal stack, anneal step, or contact qualification flow.

precomputed replay

Primary knobs

  • Normalized anneal index: low, target, high
  • Outputs: silicide completion, sheet-resistance proxy, agglomeration risk
  • Review focus: low resistance versus morphology risk
  • Boundary: no specific metal stack or qualified contact process
outputs

Saved outputs

  • completion proxy
  • sheet-resistance proxy
  • agglomeration risk
  • phase-window review note

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/process-silicide-contact-anneal-window-web-v1.json

Open file ->
download

Model script

/data/process_thermal_processing_models.py

Open file ->
download

Thermal model card

/data/process-thermal-processing-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Treat normalized anneal index as a teaching coordinate for contact reaction progress.

Keep this method attached when reusing the figure or metric.

method

Identify the minimum sheet-resistance proxy without hiding over-anneal risk.

Keep this method attached when reusing the figure or metric.

method

Report under-reaction and morphology risk as different failure modes.

Keep this method attached when reusing the figure or metric.

method

Keep contact-window evidence separate from a full silicide module qualification.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No metal species, phase diagram, line-width effect, silicon consumption, capping layer, stress, or contact-chain metrology is modeled.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No contact recipe, cleaning stack, rapid thermal process, wafer disposition, or production qualification claim is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The normalized anneal index is a teaching axis and must not be copied into equipment settings.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Real silicide evidence requires material stack, sheet/contact resistance, morphology inspection, junction leakage, and integration context.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

The dataset preserves three normalized contact-window cases.

SA-PROC-THERM-SILICIDE-CONTACT-001

evidence note

Verification checks the target case has the minimum sheet-resistance proxy and risk increases with over-anneal.

SA-PROC-THERM-SILICIDE-CONTACT-001

evidence note

The model card keeps contact formation vocabulary separated from recipe claims.

SA-PROC-THERM-SILICIDE-CONTACT-001

Source spine

These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.

MIT OCW 6.774 silicides and contactsPublic lecture page anchoring silicide/contact vocabulary and front-end contact formation context.COMSOL Rapid Thermal Annealing modelPublic model page describing RTA as dopant activation and metal-contact interfacial reaction with transient heat transfer.NIST Semiconductor Electronics Division facility summaryPublic NIST report listing microfabrication facility capabilities including furnaces, thermal oxidation, CVD, and annealing.

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.