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SIMULATION / SA-PROC-ETCH-RIE-010

Reactive-ion etch mechanism evidence map
Separate ion drive, neutral reactivity, passivation, mask, and profile control.

Compare dielectric-like and conductor-like teaching contexts across ion drive, neutral reactivity, passivation, directionality, mask resilience, feature access, ordered response, six mechanism regimes, exact ledgers, role gates, and a bounded feature-profile handoff without exposing a physical chemistry, process recipe, equipment action, or named-tool prediction.

Public releaseV109
Verification42/42 dual-domain pass
Source commitc3888cc26eb434d9ca88e76889f781194044db4a
Trace release lineage ->
sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Hold surface family, ion, neutral, passivation, angular, mask, access, and evidence states fixed; move through all eight ordered states and compare net removal, anisotropy, selectivity margin, damage, profile control, and stability.
  • Vary ion drive and neutral reactivity independently to distinguish ion-limited, neutral-limited, synergy-dominant, chemical-weighted, and physical-weighted responses.
  • Raise passivation while changing feature access and angular spread to see when passivation-limited behavior or profile-control review appears without turning an ordinal label into a chemistry recommendation.
  • Use operator, process-engineer, integration, and yield views to separate mask retention, damage, mechanism balance, feature handoff, selectivity, and lateral-loss evidence questions.
  • Inspect the categorical upstream vacuum/plasma fields and four-field Particle Monte Carlo handoff while physical pressure, power, energy, flux, geometry, time, rate, recipe, and automatic actions remain disabled.
Open visual lab ->Open lesson ->

BROWSER REACTIVE-ION ETCH MECHANISM LAB

Ion drive, neutral response, passivation, and mask burden stay separate.

Every value is an original dimensionless teaching proxy or exact integer token. The saved rows contain no named material, gas, chemistry, pressure, power, bias, energy, flux, time, rate, feature dimension, endpoint threshold, equipment command, recipe, safety instruction, or named-tool result.

Teaching surface family
LoadingLoadingLoadingLoading67 prohibited fields remain zero
ordered mechanism trace

Loading / Loading

Net removalAnisotropyProfile control
bounded mechanism chain

Access and availability to profile control

loading
Ion access-
Reactive surface-
Ion-neutral synergy-
Net removal-
active mechanism regimeLoading

Loading mixLoading directionalityLoading passivation

Process engineer view

Keep ion, neutral, passivation, and transport questions separate.

Loading

Use mechanism regime, ion-neutral balance, passivation, profile control, selectivity, and damage as distinct evidence questions. None is a chemistry recommendation, process window, or physical prediction.

Replacement evidence: Owned material stack and feature geometry, gas and surface chemistry, ion and radical distributions, rate and profile metrology, mask and stop-layer response, endpoint, uncertainty, and model-to-measurement comparison.

Ion token ledger- tokensresidual -
  • Direct impact-
  • Activation-
  • Unassigned-
Neutral token ledger- tokensresidual -
  • Chemical-
  • Synergy-
  • Passivation-
  • Unreacted-
Mask token ledger- tokensresidual -
  • Eroded-
  • Remaining-
Vacuum and CCP / ICP upstream boundary

Loading

The upstream bridge carries categorical vacuum availability, plasma drive, species balance, stability, and evidence gate only. It imports no physical pressure, gas, power, bias, energy, flux, command, or recipe state.

Vacuum state
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Plasma drive
Loading
Species balance
Loading
Plasma stability
Loading
Particle Monte Carlo feature-profile boundary

Loading

The downstream bridge carries particle-mix, directionality, passivation, and evidence gate only. It does not carry geometry, dimensions, physical trajectories, reaction probabilities, rates, recipe state, or an automatic profile decision.

Particle mix
Loading
Directionality
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Passivation
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Target packet
SA-PROC-FEATURE-PMC-007
StateRegimeRemovalAnisotropySelectivityDamageProfileHandoff

RUN CARD

Conditions before conclusions.

The browser filters and renders a saved CSV. It does not solve plasma transport or surface kinetics; run ViennaPS or another physical model; predict a feature; choose a gas, material, power, bias, pressure, temperature, endpoint, or time; control equipment; set a recipe; or qualify a process.

precomputed-browser-csv-rie-mechanism-replay

Primary knobs

  • dielectric-like or conductor-like teaching context and eight ordered replay states
  • low, middle, or high normalized ion drive and neutral reactivity
  • lean, balanced, or rich passivation with focused-like or broad-like angular context
  • fragile-like or resilient-like mask, open-like or transport-limited-like feature access, and teaching or replacement-slot evidence posture
outputs

Saved outputs

  • reactive-surface availability, ion access, chemical, physical, synergy, passivation, and net-removal components
  • anisotropy, lateral loss, mask erosion, selectivity margin, damage, transport, profile-control, and stability proxies
  • six mechanism regimes, three exact integer token ledgers, four role gates, and measurement and bridge evidence gates
  • categorical upstream vacuum/plasma bands and a four-field feature-profile bridge with physical-unit, recipe, geometry, command, qualification, and signoff claims disabled

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Reactive-ion etch mechanism CSV

/data/rie-mechanism-state-v1.csv

Open file ->
download

Compact public manifest (JSON)

/data/rie-mechanism-state-public-manifest-v1.json

Open file ->
download

Metric contract

/data/rie-metric-contract-v1.json

Open file ->
download

Source spine

/data/rie-source-spine-v1.json

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Complete deterministic 2 x 3 x 3 x 3 x 2 x 2 x 2 x 8 x 2 Cartesian sweep. Evidence posture is excluded from the physical key, equations, ledgers, proxies, regimes, and physical gates, producing 3,456 paired physical states.

Keep this method attached when reusing the figure or metric.

method

Original dimensionless algebra keeps ion access, reactive-neutral availability, passivation retention, chemical removal, physical removal, synergy, mask burden, transport burden, profile control, and stability separate.

Keep this method attached when reusing the figure or metric.

method

Ion, neutral, and mask integer teaching ledgers use deterministic allocation and close at exact zero for every row; an independent no-import verifier replays all equations, regimes, pairs, ledgers, bridges, and prohibited fields.

Keep this method attached when reusing the figure or metric.

method

Eighteen official, primary, academic, open-documentation, open-source, and industry-taxonomy link-only anchors plus thirteen claim nodes define terminology, provenance, rights, model applicability, measurement ownership, and replacement-evidence questions without supplying generated numbers.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

Dielectric-like and conductor-like are teaching application families, not named materials, stacks, compositions, stop layers, or qualified process contexts.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Ion drive, neutral reactivity, passivation, directionality, mask resilience, feature access, removal, anisotropy, selectivity, damage, transport, profile control, and stability are original dimensionless proxies without copied values or physical units.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The three exact token ledgers establish deterministic bookkeeping consistency only; they do not establish particle conservation, surface kinetics, physical rates, calibration, predictive accuracy, or chamber behavior.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The replay is not a gas recipe, material-stack recipe, RF or matching-network command, endpoint action, clean or maintenance instruction, safety procedure, process window, wafer disposition, qualification, signoff, or ViennaPS equivalent.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

6912 rows across 3456 physical configurations and 3456 evidence pairs, with 139 fields.

SA-PROC-ETCH-RIE-010

evidence note

Independent no-import verification passed 16/16: 152064 proxy, 69120 bridge, 470016 evidence-pair, 960768 CSV/JSON, and 463104 prohibited-zero comparisons.

SA-PROC-ETCH-RIE-010

evidence note

All three token-ledger residuals remain exactly zero; all 67 prohibited physical, recipe, command, procedure, qualification, and signoff fields remain zero.

SA-PROC-ETCH-RIE-010

evidence note

All six mechanism regimes are represented; the feature bridge remains blocked for 6514 rows and teaching-ready for 398 rows.

SA-PROC-ETCH-RIE-010

evidence note

15 source anchors were directly reachable and 3 publisher endpoints were access-gated, with no hard or network failure; no source value, equation, figure, table, geometry, code, measurement, or named-tool output entered the generated data.

SA-PROC-ETCH-RIE-010

Source spine

These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.

Plasma Science for Microelectronics Nanofabrication Workshop ReportPlasma-surface interaction complexity, multiple incident species, diagnostics, damage, uncertainty, and model-validation responsibility. Rights: link-only; DOE and report notices applyIon- and electron-assisted gas-surface chemistry - An important effect in plasma etchingHistorical ownership of ion-assisted gas-surface synergy vocabulary. Rights: link-only; publisher rights applyPlasma etching: Yesterday, today, and tomorrowPlasma-etch mechanism, selectivity, profile, damage, surface-chemistry, and scaling vocabulary. Rights: link-only; publisher rights applyFeature-scale model of Si etching in SF6 plasma and comparison with experimentsFeature-scale transport, surface coverage, physical removal, chemical removal, ion-enhanced removal, mask, and experiment-comparison ownership. Rights: link-only; publisher rights apply2017 Plasma Roadmap - Plasma-surface interactions for material fabricationCombined ions, electrons, radicals, excited neutrals, and photons; atomic-scale control and plasma-surface diagnostic challenges. Rights: link-only; journal and OSTI record notices applyPlasma Process MetrologyMeasurement, model validation, plasma-property characterization, endpoint, and uncertainty ownership. Rights: link-onlyReal-Time, Noninvasive Monitoring of Ion Energy and Ion Current at a Wafer Surface During Plasma EtchingIon-energy-distribution and ion-current measurement ownership and uncertainty boundaries. Rights: link-only; journal and NIST notices applyOrigin of Electrical Signals for Plasma Etching Endpoint DetectionEndpoint-signal interpretation, simultaneous measurement, and validation ownership. Rights: link-only; journal and NIST notices applyReactive Ion EtchingDistinct neutral and ion directionality plus chemical, physical, and enhancement vocabulary. Rights: link-only; university and author notices applyNon-Linear Surface ReactionsSurface coverage, chemical, physical, ion-enhanced, adsorption, and nonlinear reaction ownership. Rights: link-only; university and author notices applyApplication of ELSA to the Simulation of Plasma EtchingIon-neutral synergy, feature-size dependence, transport limits, and profile-model boundaries. Rights: link-only; university and author notices applyViennaPS DocumentationOpen feature-scale process-simulation scope, dimensional execution, transport, surface, and geometry responsibilities. Rights: link-only; project documentation and repository licenses applySF6O2 Etching - ViennaPS DocumentationCoverage, chemical removal, sputtering, ion-enhanced removal, mask, transport, and calibration responsibility vocabulary. Rights: link-only; project documentation, upstream paper, and repository licenses applyViennaPS: A flexible framework for semiconductor process simulationFramework scope, reproducibility, model implementation, and validation responsibility. Rights: link-only; publication and repository licenses applyViennaPS RepositoryVersion, source ownership, dependency, and isolated-reproduction boundary. Rights: link-only; repository license applies; versions 4.3.0 and later declare GNU GPL v3ViennaPS ReleasesExact-version and license-change tracking for any future isolated reproduction. Rights: link-only; repository license applies; current review anchor is 4.6.2 and the 4.3.0 license change is explicitEtchConductor etch, dielectric etch, reactive-ion etch, profile, selectivity, and application-family taxonomy only. Rights: link-only; vendor rights applyReactive Ion EtchingRIE, chemical, ion-induced, physical, anisotropic, endpoint, material-family, and equipment-family taxonomy only. Rights: link-only; vendor rights apply

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.