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SIMULATION / SA-MEM-003-DRAM-ROWHAMMER-ECC-001

DRAM RowHammer disturb and ECC risk
RowHammer Risk

Replay activation count, victim distance, and temperature to frame RowHammer as a pattern, margin, mitigation, and ECC-evidence problem.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Separate activation pattern, physical neighbor distance, temperature, and ECC residual risk.
  • Use victim margin as the cell-level bridge before system mitigation language.
  • Keep security, controller, and silicon evidence distinct.

RUN CARD

Conditions before conclusions.

This page replays saved RowHammer-risk data and does not run attack code, live DRAM, firmware, or controller experiments.

precomputed RowHammer disturb sweep

Primary knobs

  • Activation count
  • Victim distance
  • Temperature
outputs

Saved outputs

  • Disturb index
  • Victim margin
  • ECC residual-risk proxy

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/dram-rowhammer-ecc-risk-web-v1.json

Open file ->
download

Dataset CSV

/data/dram-rowhammer-ecc-risk-v64.csv

Open file ->
download

v64 deep simulation summary CSV

/data/v64-deep-simulations-summary.csv

Open file ->
download

v64 deep model script

/data/v64_deep_semiconductor_sims.mjs

Open file ->
download

v64 deep model card

/data/v64-deep-simulations-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Disturb index increases with activation count, temperature, and inverse victim distance.

Keep this method attached when reusing the figure or metric.

method

Victim margin falls as the disturb index rises.

Keep this method attached when reusing the figure or metric.

method

ECC residual-risk proxy is shown only as a teaching output after margin is exceeded.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No exploit, real DIMM, vendor mitigation, TRR behavior, ECC code, or measured bit-flip data is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No security claim or product vulnerability claim is made.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Use controlled hardware characterization and responsible disclosure processes for real RowHammer work.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

v64 deep results store every activation, distance, temperature, margin, and risk row.

SA-MEM-003-DRAM-ROWHAMMER-ECC-001

evidence note

CSV export preserves the disturb sweep.

SA-MEM-003-DRAM-ROWHAMMER-ECC-001

evidence note

The page is intentionally framed as evidence literacy, not exploit enablement.

SA-MEM-003-DRAM-ROWHAMMER-ECC-001

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.