Skip to content
SASemiAgoraSemiconductor knowledgeResearch services
Menu
Research services한국어 안내LearnTraceCompareReproducePlanSearch
ExploreKnowledge AtlasDetailed mapSimulationsDomain mapGuided journeysLabs
WorkspacesScenario ComparisonReproducibility RegistryExperiment PlannerResearch Project BuilderClaim-Evidence WorkbenchData Contract
TrustEvidence Knowledge GraphMetric OntologyCitation ProvenanceSource WorkspaceEvidence BrowserPublic Release LedgerSource PolicyCorrections
MoreSearchPracticeCalculatorsResourcesResearch atlasRelease provenanceReading RoomResearch servicesAbout SemiAgora
SASemiAgoraSemiconductor knowledge & engineeringOpen lesson

SIMULATION / SA-MEM-DEPTH-READ-DISTURB-001

SRAM read-disturb sizing
Read Disturb

Replay how normalized cell ratio and wordline pulse width change read-disturb peak, read-SNM proxy, and a retained/not-retained budget.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Raise the cell-ratio proxy and inspect how the disturb budget improves.
  • Lengthen the wordline pulse and watch dynamic disturb worsen.
  • Keep read-SNM proxy separate from the dynamic disturb peak.
Open visual lab ->Open lesson ->

RUN CARD

Conditions before conclusions.

The page replays a saved sizing budget. It does not execute a new 6T SRAM characterization.

precomputed replay

Primary knobs

  • Cell-ratio proxy: 1.2, 1.5, 1.8, 2.1
  • Wordline pulse: 1.0, 2.5, 4.0 ns
  • Retained rule: disturb budget >= 70 mV
  • Outputs: read-disturb peak and read-SNM proxy
outputs

Saved outputs

  • read-disturb peak
  • read-SNM proxy
  • disturb budget
  • retained flag

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/sram-read-disturb-sizing-web-v1.json

Open file ->
download

Model script

/data/sram_memory_depth_models.mjs

Open file ->
download

Model card

/data/sram-memory-depth-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Treat cell ratio as a normalized pull-down/access strength proxy.

Keep this method attached when reusing the figure or metric.

method

Report dynamic disturb peak and static read-SNM proxy as separate quantities.

Keep this method attached when reusing the figure or metric.

method

Apply the retained rule only to this teaching budget.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

Cell ratio is a normalized sizing proxy, not a taped-out layout dimension.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The replay does not model half-select, local variation, temperature, aging, array IR drop, or sense-amplifier kickback.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Read SNM proxy and dynamic disturb are teaching quantities; neither is a silicon Vmin claim.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

The pass rule is for learning how to read evidence, not for SRAM compiler or bitcell qualification.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

The dataset records twelve sizing and pulse-width cases.

SA-MEM-DEPTH-READ-DISTURB-001

evidence note

Verification checks that larger cell ratio improves budget and longer pulses increase disturb.

SA-MEM-DEPTH-READ-DISTURB-001

evidence note

The model card explains why this is not a bitcell qualification result.

SA-MEM-DEPTH-READ-DISTURB-001

Source spine

These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.

UCLA eScholarship SRAM sense amplifier thesisPublic thesis used for offset, attenuation, control-timing, and sense-amplifier vocabulary.Grossar et al. SRAM read stability and write-abilityPublic paper used for read-stability, write-ability, SNM, and N-curve vocabulary.NVIDIA reverse write assist and SRAM VMIN paperPublic paper used to anchor assist, reverse assist, VMIN, guardband, and canary vocabulary.CS61C average memory access time notesPublic course note used for hit time, miss rate, miss penalty, and AMAT vocabulary.

Public execution boundary

No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.