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SIMULATION / SA-SEED-MEM-MRAM-SWITCH-001

MRAM switching energy versus retention
MRAM Switch

Replay STT/SOT-style write probability, pulse width, retention barrier, and write energy as a compact MRAM tradeoff card.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Move retention barrier and pulse width together to see why write energy is not independent.
  • Compare STT and SOT labels as architecture cues, not as calibrated stack predictions.
  • Use switch probability as a lesson proxy before studying micromagnetics or silicon data.

RUN CARD

Conditions before conclusions.

This page replays saved MRAM surrogate data and does not run a micromagnetic or LLG solver.

precomputed educational sweep

Primary knobs

  • Mechanism label
  • Thermal barrier
  • Pulse width
outputs

Saved outputs

  • Drive current proxy
  • Switch probability
  • Write energy

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/mram-switching-energy-retention-web-v1.json

Open file ->
download

Seed sweep summary CSV

/data/github-open-source-seed-sweep-summary.csv

Open file ->
download

Seed model script

/data/github_open_source_seed_sims.py

Open file ->
download

Seed model card

/data/github-open-source-seed-sims-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Critical current scales with the normalized retention barrier and mechanism label.

Keep this method attached when reusing the figure or metric.

method

Switch probability uses a logistic teaching curve around the critical-current ratio.

Keep this method attached when reusing the figure or metric.

method

Write energy is computed from voltage, drive current, and pulse width.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No calibrated MTJ material stack, stochastic thermal-noise LLG solve, or measured write-error data.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

STT and SOT labels are teaching categories, not validated process/device options.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Use as vocabulary and tradeoff scaffolding before citing MRAM papers or foundry data.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

Seed sweep JSON stores the STT/SOT, barrier, pulse, probability, and energy rows.

SA-SEED-MEM-MRAM-SWITCH-001

evidence note

CSV export makes the lowest-energy above-threshold case reviewable.

SA-SEED-MEM-MRAM-SWITCH-001

evidence note

GitHub expedition keeps NeuroSim as an external link-only reference until rights review.

SA-SEED-MEM-MRAM-SWITCH-001

Public execution boundary

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