2.1 nm / 100 nmLong-throw edge lossUNKNOWNInspect metric contract
11.1 nm / 100 nmShort-throw edge lossUNKNOWNInspect metric contract
sidewall factor 0.18Shadowing warningUNKNOWNInspect metric contract
SIMULATION / SA-PROC-PVD-EVAP-LINEOFSIGHT-001
Thermal and e-beam evaporation line-of-sight
Evaporation LOS
Compare long-throw and short-throw evaporation profiles, then separate open-field uniformity from sidewall shadowing.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Compare long-throw and short-throw profiles before reading any topography warning.
- Inspect the line-of-sight factor to see why open-field thickness does not imply conformal sidewall coverage.
- Use the model to decide when evaporation is a good lift-off tool and when another deposition method may be needed.
RUN CARD
Conditions before conclusions.
The public page replays saved geometry data. It does not operate an evaporator, submit recipes, or predict lift-off yield.
Primary knobs
- Wafer radius: 50 mm
- Nominal center thickness: 100 nm
- Source distance: long-throw versus short-throw replay
- Topography: open field versus vertical sidewall factor
Saved outputs
- radial thickness samples
- center-edge drop
- open-field nonuniformity
- line-of-sight shadowing notes
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/process-evaporation-uniformity-web-v1.json
Open file ->Model script
/data/process_thin_film_models.py
Open file ->Process model card
/data/process-thin-film-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Normalize each radial profile to the center thickness.
Keep this method attached when reusing the figure or metric.
Compare source-distance sensitivity through center-edge drop.
Keep this method attached when reusing the figure or metric.
Model sidewall coverage as a separate line-of-sight factor.
Keep this method attached when reusing the figure or metric.
Keep material vapor pressure, melt pool behavior, and chamber scattering outside the MVP.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No material-specific vapor pressure, crucible geometry, sticking coefficient, substrate heating, or chamber scattering is modeled.
Carry this boundary into any derivative note, paper draft, or slide.
No adhesion, resist reflow, lift-off yield, grain texture, film stress, or contamination claim is made.
Carry this boundary into any derivative note, paper draft, or slide.
The sidewall factor is a teaching warning, not a measured step-coverage value.
Carry this boundary into any derivative note, paper draft, or slide.
Real process use requires facility recipes, masks, metrology, and contamination review.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset preserves both radial profiles and the line-of-sight shadowing examples.
SA-PROC-PVD-EVAP-LINEOFSIGHT-001
The model card states that open-field thickness is not a conformality guarantee.
SA-PROC-PVD-EVAP-LINEOFSIGHT-001
Source links document public cleanroom language around evaporators and line-of-sight deposition.
SA-PROC-PVD-EVAP-LINEOFSIGHT-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.