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SIMULATION / SA-MEM-003-DRAM-RETENTION-REFRESH-001

DRAM retention tail and refresh policy
DRAM Refresh

Replay leakage class, temperature, and refresh interval to see why weak-cell tails drive refresh policy.

sectionExploresectionRun CardsectionExportsectionMethodssectionLimitssectionEvidence

EXPLORE

Start with the observable.

Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.

guided exploration
  • Look at typical, weak, and tail leakage classes instead of one average cell.
  • Trade refresh interval against bandwidth tax and fail-tail proxy.
  • Use temperature acceleration as a prompt for real retention characterization.

RUN CARD

Conditions before conclusions.

This page replays saved DRAM retention data and does not run a live retention tester, memory controller, or product refresh policy.

precomputed retention-policy sweep

Primary knobs

  • Leakage class
  • Temperature
  • Refresh interval
outputs

Saved outputs

  • Remaining charge
  • Fail-tail proxy
  • Refresh bandwidth tax

EXPORT

Download the public artifacts.

These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.

download

Dataset JSON

/data/dram-retention-refresh-policy-web-v1.json

Open file ->
download

Dataset CSV

/data/dram-retention-refresh-policy-v64.csv

Open file ->
download

v64 deep simulation summary CSV

/data/v64-deep-simulations-summary.csv

Open file ->
download

v64 deep model script

/data/v64_deep_semiconductor_sims.mjs

Open file ->
download

v64 deep model card

/data/v64-deep-simulations-model-card.md

Open file ->

METHODS

How the number was made.

Methods are written for citation discipline: the extraction rule matters as much as the plotted value.

method

Leakage grows with a simple temperature acceleration factor and weak-cell class multiplier.

Keep this method attached when reusing the figure or metric.

method

Fail-tail proxy activates when the modeled charge loss crosses a teaching threshold.

Keep this method attached when reusing the figure or metric.

method

Refresh bandwidth tax is inversely proportional to refresh interval.

Keep this method attached when reusing the figure or metric.

LIMITS

What this page does not claim.

The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.

non-claim

No measured retention distribution, variable retention time, disturbance, ECC, repair, or vendor refresh policy is included.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

No JEDEC compliance, memory-controller recommendation, or product reliability claim is made.

Carry this boundary into any derivative note, paper draft, or slide.

non-claim

Real retention work needs measured weak-cell tails, temperature sweeps, and system mitigation evidence.

Carry this boundary into any derivative note, paper draft, or slide.

EVIDENCE

Trace the claim back to artifacts.

The evidence route remains the catalog-level browser; this page is the simulation-level reading card.

evidence note

v64 deep results store every leakage class, temperature, refresh, and fail-tail row.

SA-MEM-003-DRAM-RETENTION-REFRESH-001

evidence note

CSV export preserves the policy tradeoff table.

SA-MEM-003-DRAM-RETENTION-REFRESH-001

evidence note

The existing DRAM retention lab remains separate as a circuit-oriented replay.

SA-MEM-003-DRAM-RETENTION-REFRESH-001

Public execution boundary

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