1.2758Best triangle scoreUNKNOWNInspect metric contract
SOT / 80 kT / 0.5 nsBest caseUNKNOWNInspect metric contract
18 casesSweep rowsUNKNOWNInspect metric contract
SIMULATION / SA-MEM-MRAM-002-TRIANGLE-001
MRAM switching/read/retention triangle
MRAM Triangle
Replay STT/SOT labels, thermal barrier, and pulse width to compare write energy, switch probability, read margin, retention, and disturb risk.
EXPLORE
Start with the observable.
Use this page when the simulation is the primary artifact. The linked lesson explains the concept; the linked lab keeps the visual replay surface available.
- Read write probability and write energy together before ranking MRAM options.
- Keep read margin, retention proxy, and disturb risk visible beside switching.
- Use STT and SOT as mechanism labels, not commercial replacement claims.
RUN CARD
Conditions before conclusions.
This page replays saved MRAM surrogate rows and does not run micromagnetics, LLG, MTJ stack calibration, or product memory evaluation.
Primary knobs
- Mechanism label
- Thermal barrier
- Pulse width
Saved outputs
- Switch probability
- Write energy
- Read margin
- Retention proxy
- Disturb risk
EXPORT
Download the public artifacts.
These exports are the supported public files for review. PDK files and restricted third-party material are not redistributed.
Dataset JSON
/data/mram-switching-read-retention-triangle-web-v1.json
Open file ->Dataset CSV
/data/mram-switching-read-retention-triangle-v65.csv
Open file ->v65 daily signal summary CSV
/data/v65-daily-signal-summary.csv
Open file ->v65 daily signal model script
/data/v65_daily_signal_sims.mjs
Open file ->v65 daily signal model card
/data/v65-daily-signal-model-card.md
Open file ->METHODS
How the number was made.
Methods are written for citation discipline: the extraction rule matters as much as the plotted value.
Drive current proxy scales with thermal barrier and mechanism label.
Keep this method attached when reusing the figure or metric.
Switch probability improves with pulse width while higher barriers add retention and write-cost pressure.
Keep this method attached when reusing the figure or metric.
The triangle score combines switching, read margin, retention, energy, and disturb risk to discourage one-metric claims.
Keep this method attached when reusing the figure or metric.
LIMITS
What this page does not claim.
The MVP is useful because the limits are visible. These statements prevent a teaching simulation from being cited as silicon evidence.
No measured MTJ stack, stochastic thermal-noise LLG solve, endurance data, read-disturb measurement, or array implementation is included.
Carry this boundary into any derivative note, paper draft, or slide.
No claim is made that MRAM replaces SRAM, DRAM, Flash, or HBM in a product hierarchy.
Carry this boundary into any derivative note, paper draft, or slide.
Real MRAM study requires measured or published device data, array context, sense circuitry, write-error statistics, and retention/endurance conditions.
Carry this boundary into any derivative note, paper draft, or slide.
EVIDENCE
Trace the claim back to artifacts.
The evidence route remains the catalog-level browser; this page is the simulation-level reading card.
The dataset stores every STT/SOT, barrier, pulse, energy, probability, margin, retention, and disturb row.
SA-MEM-MRAM-002-TRIANGLE-001
CSV export supports a memory-hierarchy comparison table without copying external course material.
SA-MEM-MRAM-002-TRIANGLE-001
The memory domain now separates basic MRAM switching from a broader read/retention/disturb triangle.
SA-MEM-MRAM-002-TRIANGLE-001
Source spine
These links anchor the public teaching model. They do not convert the replay into a qualified process recipe or signoff result.
Public execution boundary
No server-side live ngspice execution, uploads, accounts, payments, comments, newsletter signup, or job/event submissions are active on this page.